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Researcher profile

M. A. Laakso

M. A. Laakso contributes to research discovery and scholarly infrastructure.

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Published work

5 published item(s)

preprint2011arXiv

Manifestly non-Gaussian fluctuations in superconductor-normal metal tunnel nanostructures

We propose a mesoscopic setup which exhibits strong and manifestly non-Gaussian fluctuations of energy and temperature when suitably driven out of equilibrium. The setup consists of a normal metal island (N) coupled by tunnel junctions (I) to two superconducting leads (S), forming a SINIS structure, and is biased near the threshold voltage for quasiparticle tunneling, $eV\approx2Δ$. The fluctuations can be measured by monitoring the time-dependent electric current through the system, which makes the setup suitable for the realization of feedback schemes which allow to stabilize the temperature to the desired value.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Giant current fluctuations in an overheated single electron transistor

Interplay of cotunneling and single-electron tunneling in a thermally isolated single-electron transistor (SET) leads to peculiar overheating effects. In particular, there is an interesting crossover interval where the competition between cotunneling and single-electron tunneling changes to the dominance of the latter. In this interval, the current exhibits anomalous sensitivity to the effective electron temperature of the transistor island and its fluctuations. We present a detailed study of the current and temperature fluctuations at this interesting point. The methods implemented allow for a complete characterization of the distribution of the fluctuating quantities, well beyond the Gaussian approximation. We reveal and explore the parameter range where, for sufficiently small transistor islands, the current fluctuations become gigantic. In this regime, the optimal value of the current, its expectation value, and its standard deviation differ from each other by parametrically large factors. This situation is unique for transport in nanostructures and for electron transport in general. The origin of this spectacular effect is the exponential sensitivity of the current to the fluctuating effective temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Fully Overheated Single-Electron Transistor

We consider the fully overheated single-electron transistor, where the heat balance is determined entirely by electron transfers. We find three distinct transport regimes corresponding to cotunneling, single-electron tunneling, and a competition between the two. We find an anomalous sensitivity to temperature fluctuations at the crossover between the two latter regimes that manifests in an exceptionally large Fano factor of current noise.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Charge transport in ballistic multiprobe graphene structures

We study the the transport properties of multiterminal ballistic graphene samples, concentrating on the conductance matrix, fluctuations and cross-correlations. Far away from Dirac point, the current is carried mostly by propagating modes and the results can be explained with the conventional semiclassical picture familiar from ray optics, where electrons propagate along a single direction before scattering or reaching the terminals. However, close to the Dirac point the transport is due to evanescent modes which do not have to follow a rectilinear path. As we show in this Letter, this property of the evanescent modes influences the conductance matrix. However, at best it can be observed by measuring the cross correlations in an exchange Hanbury Brown-Twiss experiment.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Effective capacitance in a single-electron transistor

Starting from the Kubo formula for conductance, we calculate the frequency-dependent response of a single-electron transistor (SET) driven by an ac signal. Treating tunneling processes within the lowest order approximation, valid for a wide range of parameters, we discover a finite reactive part even under Coulomb blockade due to virtual processes. At low frequencies this can be described by an effective capacitance. This effect can be probed with microwave reflection measurements in radio-frequency (rf) SET provided that the capacitance of the surroundings does not completely mask that of the SET.

0 citations0 reviewsNo code linkedOpen access