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Researcher profile

Luis Guillermo Villanueva

Luis Guillermo Villanueva contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.mtrl-sciphysics.app-ph

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Published work

7 published item(s)

preprint2020arXiv

Frequency fluctuations in nanomechanical silicon nitride string resonators

High quality factor ($Q$) nanomechanical resonators have received a lot of attention for sensor applications with unprecedented sensitivity. Despite the large interest, few investigations into the frequency stability of high-$Q$ resonators have been reported. Such resonators are characterized by a linewidth significantly smaller than typically employed measurement bandwidths, which is the opposite regime to what is normally considered for sensors. Here, the frequency stability of high-$Q$ silicon nitride string resonators is investigated both in open-loop and closed-loop configurations. The stability is here characterized using the Allan deviation. For open-loop tracking, it is found that the Allan deviation gets separated into two regimes, one limited by the thermomechanical noise of the resonator and the other by the detection noise of the optical transduction system. The point of transition between the two regimes is the resonator response time, which can be shown to have a linear dependence on $Q$. Laser power fluctuations from the optical readout is found to present a fundamental limit to the frequency stability. Finally, for closed-loop measurements, the response time is shown to no longer be intrinsically limited but instead given by the bandwidth of the closed-loop tracking system. Computed Allan deviations based on theory are given as well and found to agree well with the measurements. These results are of importance for the understanding of fundamental limitations of high-$Q$ resonators and their application as high performance sensors.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Manufacture and Characterization of Graphene Membranes with Suspended Silicon Proof Masses for MEMS and NEMS Applications

Unparalleled strength, chemical stability, ultimate surface-to-volume ratio and excellent electronic properties of graphene make it an ideal candidate as a material for membranes in micro- and nanoelectromechanical systems (MEMS and NEMS). However, the integration of graphene into MEMS or NEMS devices and suspended structures such as proof masses on graphene membranes raises several technological challenges, including collapse and rupture of the graphene. We have developed a robust route for realizing membranes made of double-layer CVD graphene and suspending large silicon proof masses on membranes with high yields. We have demonstrated the manufacture of square graphene membranes with side lengths from 7 micro meter to 110 micro meter and suspended proof masses consisting of solid silicon cubes that are from 5 micro meter multiply 5 micro meter multiply 16.4 micro meter to 100 micro meter multiply 100 micro meter multiply 16.4 micro meter in size. Our approach is compatible with wafer-scale MEMS and semiconductor manufacturing technologies, and the manufacturing yields of the graphene membranes with suspended proof masses were greater than 90%, with more than 70% of the graphene membranes having more than 90% graphene area without visible defects. The graphene membranes with suspended proof masses were extremely robust and were able to withstand indentation forces from an atomic force microscope (AFM) tip of up to ~7000 nN. The measured resonance frequencies of the realized structures ranged from tens to hundreds of kHz, with quality factors ranging from 63 to 148. The proposed approach for the reliable and large-scale manufacture of graphene membranes with suspended proof masses will enable the development and study of innovative NEMS devices with new functionalities and improved performances.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Observation of a phononic quadrupole topological insulator

The modern theory of charge polarization in solids is based on a generalization of Berry's phase. Its possible quantization lies at the heart of our understanding of all systems with topological band structures that were discovered over the last decades. While based on the concept of the "charge" polarization, the same theory can be used as an elegant tool to characterize the Bloch bands of neutral bosonic systems such as photonic or phononic crystals. Recently, the theory of this quantized polarization was extended from the dipole- to higher multipole-moments. In particular, a two-dimensional quantized quadrupole insulator is predicted to have gapped yet topological one-dimensional edge-modes, which in turn stabilize zero-dimensional in-gap corner states. However, such a state of matter has not been observed experimentally. Here, we provide the first measurements of a phononic quadrupole insulator. We experimentally characterize the bulk, edge, and corner physics of a mechanical metamaterial and find the predicted gapped edge and in-gap corner states. We further corroborate our findings by comparing the mechanical properties of a topologically non-trivial system to samples in other phases predicted by the quadrupole theory. From an application point of view, these topological corner states are an important stepping stone on the way to topologically protected wave-guides in higher dimensions and thereby open a new design path for metamaterials.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Frequency fluctuations in silicon nanoresonators

Frequency stability is key to performance of nanoresonators. This stability is thought to reach a limit with the resonator's ability to resolve thermally-induced vibrations. Although measurements and predictions of resonator stability usually disregard fluctuations in the mechanical frequency response, these fluctuations have recently attracted considerable theoretical interest. However, their existence is very difficult to demonstrate experimentally. Here, through a literature review, we show that all studies of frequency stability report values several orders of magnitude larger than the limit imposed by thermomechanical noise. We studied a monocrystalline silicon nanoresonator at room temperature, and found a similar discrepancy. We propose a new method to show this was due to the presence of frequency fluctuations, of unexpected level. The fluctuations were not due to the instrumentation system, or to any other of the known sources investigated. These results challenge our current understanding of frequency fluctuations and call for a change in practices.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Size Effects on Mechanical Properties of Micro/Nano Structures

Experiments on Micro- and Nano-mechanical systems (M/NEMS) have shown that their behavior upon bending loads departs in many cases from the classical predictions using Euler-Bernoulli theory and Hooke law. This anomalous response has usually been seen as a dependence of the material properties with the size of the structure, in particular thickness. A theoretical model that allows for quantitative understanding and prediction of this size effect is important for the design of M/NEMS. In this paper, we summarize and analyze the five theories that can be found in the literature: Grain Boundary Theory (GBT), Surface Stress Theory (SST), Residual Stress Theory (RST), Couple Stress Theory (CST) and Surface Elasticity Theory (SET). By comparing these theories with experimental data we propose a simplified model combination of CST and SET that properly fits all considered cases, therefore delivering a simple (two parameters) model that can be used to predict the mechanical properties at the nanoscale.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Demonstration of suppressed phonon tunneling losses in phononic bandgap shielded membrane resonators for high-Q optomechanics

Dielectric membranes with exceptional mechanical and optical properties present one of the most promising platforms in quantum opto-mechanics. The performance of stressed silicon nitride nanomembranes as mechanical resonators notoriously depends on how their frame is clamped to the sample mount, which in practice usually necessitates delicate, and difficult-to-reproduce mounting solutions. Here, we demonstrate that a phononic bandgap shield integrated in the membrane's silicon frame eliminates this dependence, by suppressing dissipation through phonon tunneling. We dry-etch the membrane's frame so that it assumes the form of a $\mathrm{cm}$-sized bridge featuring a 1-dimensional periodic pattern, whose phononic density of states is tailored to exhibit one, or several, full band gaps around the membrane's high-$Q$ modes in the MHz-range. We quantify the effectiveness of this phononic bandgap shield by optical interferometry measuring both the suppressed transmission of vibrations, as well as the influence of frame clamping conditions on the membrane modes. We find suppressions up to $40~\mathrm{dB}$ and, for three different realized phononic structures, consistently observe significant suppression of the dependence of the membrane's modes on sample clamping - if the mode's frequency lies in the bandgap. As a result, we achieve membrane mode quality factors of $5\times 10^{6}$ with samples that are tightly bolted to the $8~\mathrm{K}$-cold finger of a cryostat. $Q\times f$-products of $6\times 10^{12}~\mathrm{Hz}$ at $300~\mathrm{K}$ and $14\times 10^{12}~\mathrm{Hz}$ at $8~\mathrm{K}$ are observed, satisfying one of the main requirements for optical cooling of mechanical vibrations to their quantum ground-state.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Graphene on silicon nitride for optoelectromechanical micromembrane resonators

Due to their exceptional mechanical and optical properties, dielectric silicon nitride (SiN) micromembrane resonators have become the centerpiece of many optomechanical experiments. Efficient capacitive coupling of the membrane to an electrical system would facilitate exciting hybrid optoelectromechanical devices. However, capacitive coupling of such dielectric membranes is rather weak. Here we add a single layer of graphene on SiN micromembranes and compare electromechanical coupling and mechanical properties to bare dielectric membranes and to membranes metallized with an aluminium layer. The electrostatic coupling of graphene coated membranes is found to be equal to a perfectly conductive membrane. Our results show that a single layer of graphene substantially enhances the electromechanical capacitive coupling without significantly adding mass, decreasing the superior mechanical quality factor or affecting the optical properties of SiN micromembrane resonators.

0 citations0 reviewsNo code linkedOpen access