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Luis A. Lastras

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Computation and Language cond-mat.mtrl-sci Information Theory Machine Learning math.IT Social and Information Networks

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preprint2026arXiv

ToolRM: Outcome Reward Models for Tool-Calling Large Language Models

As large language models (LLMs) increasingly interact with external tools, reward modeling for tool use has emerged as a critical yet underexplored area of research. Existing reward models, trained primarily on natural language outputs, struggle to evaluate tool-based reasoning and execution. To quantify this gap, we introduce FC-RewardBench, the first benchmark to systematically evaluate reward models in tool-calling scenarios. Our analysis shows that current reward models frequently miss key signals of effective tool use, highlighting the need for domain-specific modeling. We address this by proposing a training framework for outcome reward models using data synthesized from permissively licensed, open-weight LLMs. We introduce ToolRM - a suite of reward models for tool-use ranging from 1.7B to 14B parameters. Across diverse settings, these models consistently outperform general-purpose baselines. Notably, they achieve up to a 25% improvement with Best-of-N sampling, while also improving robustness to input noise, enabling effective data filtering, and supporting RL-training of policy models.

preprint2020arXiv

Lattice Representation Learning

In this article we introduce theory and algorithms for learning discrete representations that take on a lattice that is embedded in an Euclidean space. Lattice representations possess an interesting combination of properties: a) they can be computed explicitly using lattice quantization, yet they can be learned efficiently using the ideas we introduce in this paper, b) they are highly related to Gaussian Variational Autoencoders, allowing designers familiar with the latter to easily produce discrete representations from their models and c) since lattices satisfy the axioms of a group, their adoption can lead into a way of learning simple algebras for modeling binary operations between objects through symbolic formalisms, yet learn these structures also formally using differentiation techniques. This article will focus on laying the groundwork for exploring and exploiting the first two properties, including a new mathematical result linking expressions used during training and inference time and experimental validation on two popular datasets.

preprint2016arXiv

A Proximity Measure using Blink Model

This paper proposes a new graph proximity measure. This measure is a derivative of network reliability. By analyzing its properties and comparing it against other proximity measures through graph examples, we demonstrate that it is more consistent with human intuition than competitors. A new deterministic algorithm is developed to approximate this measure with practical complexity. Empirical evaluation by two link prediction benchmarks, one in coauthorship networks and one in Wikipedia, shows promising results. For example, a single parameterization of this measure achieves accuracies that are 14-35% above the best accuracy for each graph of all predictors reported in the 2007 Liben-Nowell and Kleinberg survey.

preprint2010arXiv

Phase change memory technology

We survey the current state of phase change memory (PCM), a non-volatile solid-state memory technology built around the large electrical contrast between the highly-resistive amorphous and highly-conductive crystalline states in so-called phase change materials. PCM technology has made rapid progress in a short time, having passed older technologies in terms of both sophisticated demonstrations of scaling to small device dimensions, as well as integrated large-array demonstrators with impressive retention, endurance, performance and yield characteristics. We introduce the physics behind PCM technology, assess how its characteristics match up with various potential applications across the memory-storage hierarchy, and discuss its strengths including scalability and rapid switching speed. We then address challenges for the technology, including the design of PCM cells for low RESET current, the need to control device-to-device variability, and undesirable changes in the phase change material that can be induced by the fabrication procedure. We then turn to issues related to operation of PCM devices, including retention, device-to-device thermal crosstalk, endurance, and bias-polarity effects. Several factors that can be expected to enhance PCM in the future are addressed, including Multi-Level Cell technology for PCM (which offers higher density through the use of intermediate resistance states), the role of coding, and possible routes to an ultra-high density PCM technology.