Valley and spin polarized broken symmetry states of interacting electrons in gated MoS quantum dots
Understanding strongly interacting electrons enables the design of materials, nanostructures and devices. Developing this understanding relies on the ability to tune and control electron-electron interactions by, e.g., confining electrons to atomically thin layers of 2D crystals with reduced screening. The interplay of strong interactions on a hexagonal lattice with two nonequivalent valleys, topological moments, and the Ising-like spin-orbit interaction gives rise to a variety of phases of matter corresponding to valley and spin polarized broken symmetry states. In this work we describe a highly tunable strongly interacting system of electrons laterally confined to monolayer transition metal dichalcogenide MoS by metalic gates. We predict the existence of valley and spin polarized broken symmetry states tunable by the parabolic confining potential using exact diagonalization techniques for up to electrons. We find that the ground state is formed by one of two phases, either both spin and valley polarized or valley unpolarised but spin intervalley antiferromagnetic, which compete as a function of electronic shell spacing. This finding can be traced back to the combined effect of Ising-like spin-orbit coupling and weak intervalley exchange interaction. These results provide an explanation for interaction-driven symmetry-breaking effects in valley systems and highlight the important role of electron-electron interactions for designing valleytronic devices.