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Researcher profile

Luca Menzio

Luca Menzio contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
physics.ins-dethep-exphysics.app-ph

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Published work

3 published item(s)

preprint2022arXiv

A Compensated Design of the LGAD Gain Layer

In this contribution, we present an innovative design of the Low-Gain Avalanche Diode (LGAD) gain layer, the p$^+$ implant responsible for the local and controlled signal multiplication. In the standard LGAD design, the gain layer is obtained by implanting $\sim$ 5E16/cm$^3$ atoms of an acceptor material, typically Boron or Gallium, in the region below the n$^{++}$ electrode. In our design, we aim at designing a gain layer resulting from the overlap of a p$^+$ and an n$^+$ implants: the difference between acceptor and donor doping will result in an effective concentration of about 5E16/cm$^3$, similar to standard LGADs. At present, the gain mechanism of LGAD sensors under irradiation is maintained up to a fluence of $\sim$ 1-2E15/cm$^2$, and then it is lost due to the acceptor removal mechanism. The new design will be more resilient to radiation, as both acceptor and donor atoms will undergo removal with irradiation, but their difference will maintain constant. The compensated design will empower the 4D tracking ability typical of the LGAD sensors well above 1E16/cm$^2$.

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preprint2022arXiv

Optimization of the Gain Layer Design of Ultra-Fast Silicon Detectors

In the past few years, the need of measuring accurately the spatial and temporal coordinates of the particles generated in high-energy physics experiments has spurred a strong R\&D in the field of silicon sensors. Within these research activities, the so-called Ultra-Fast Silicon Detectors (UFSDs), silicon sensors optimized for timing based on the Low-Gain Avalanche Diode (LGAD) design, have been proposed and adopted by the CMS and ATLAS collaborations for their respective timing layers. The defining feature of the Ultra-Fast Silicon Detectors (UFSDs) is the internal multiplication mechanism, determined by the gain layer design. In this paper, the performances of several types of gain layers, measured with a telescope instrumented with a $^{90}$Sr $β$-source, are reported and compared. The measured sensors are produced by Fondazione Bruno Kessler (FBK) and Hamamatsu Photonics (HPK). The sensor yielding the best performance, both when new and irradiated, is an FBK 45\mum-thick sensor with a carbonated deep gain implant, where the carbon and the boron implants are annealed concurrently with a low thermal load. This sensor is able to achieve a time resolution of 40~ps up to a radiation fluence of~\fluence{2.5}{15}, delivering at least 5~fC of charge.

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preprint2019arXiv

The e_LiBANS facility: a new compact thermal neutron source based on a medical electron LINAC

A new photonuclear thermal neutron facility has been developed at the Physics Department of University of Torino. The facility is based on a medical electron LINAC coupled to a compact converter and moderator assembly. A homogenous thermal neutron field of the order of 10$^6$ cm$^{-2}$s$^{-1}$ is achievable in the enclosed irradiation cavity with low gamma and fast neutron contaminations. Its intensity can be tuned varying the LINAC current. These characteristics make the source appropriate for several applications like detectors development, material studies and BNCT preclinical research. This work describes the project and the experimental characterization of the facility. This includes the measurement of the thermal neutron fluence rate, the determination of the neutron energy spectrum and of the thermal neutron field uniformity and the evaluation of the gamma contamination.

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