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Luc Robichaud

Luc Robichaud appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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Published work

2 published item(s)

preprint2021arXiv

Efficient quantum dot $\mathbf{k}\cdot\mathbf{p}$ in wurtzite systems including spatially varying elastic and dielectric constants and smooth alloy profile

We present Fourier-space based methods to calculate the electronic structure of wurtzite quantum dot systems with continuous alloy profiles. We incorporate spatially varying elastic and dielectric constants in strain and piezoelectric potential calculations. A method to incorporate smooth alloy profiles in all aspects of the calculations is presented. We demonstrate our methodology for the case of a 1D InGaN quantum dot array and show the importance of including these spatially varying parameters in the modeling of devices. We demonstrate that convergence of the lowest bound state energies is to good approximation determined by the largest wave vector used in constructing the states. We also present a novel approach of coupling strain into the $\mathbf{k}\cdot\mathbf{p}$ Hamiltonian, greatly reducing the computational cost of generating the Hamiltonian.

preprint2020arXiv

Two-Photon Photocurrent in InGaN/GaN Nanowire Intermediate Band Solar Cells

Intermediate band solar cells hold the promise of ultrahigh power conversion efficiencies using a single semiconductor junction. Many current implementations use materials with bandgaps too small to achieve maximum efficiency or use cost-prohibitive substrates. Here we demonstrate a material system for intermediate band solar cells using InGaN/GaN quantum-dot-in-nanowire heterostructures grown directly on silicon to provide a lower cost, large-bandgap intermediate band solar cell platform. We demonstrate sequential two-photon current generation with sub-bandgap photons, the hallmark of intermediate band solar cell operation, through vertically stacked quantum dots in the nanowires. Near-infrared light biasing with an 850 nm laser intensity up to 200 W/cm2 increases the photocurrent above and below the bandgap by up to 19% at 78 K, and 44% at room temperature. The nanostructured III-nitride strategy provides a route towards realistic room temperature intermediate band solar cells while leveraging the cost benefits of silicon substrates.