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Jacob J. Krich

Jacob J. Krich contributes to research discovery and scholarly infrastructure.

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Published work

8 published item(s)

preprint2022arXiv

Lossless plasmons in highly mismatched alloys

We explore the potential of highly mismatched alloys (HMAs) for realizing lossless plasmonics. Systems with a plasmon frequency at which there are no interband or intraband processes possible are called lossless, as there is no 2-particle loss channel for the plasmon. We find that the band splitting in HMAs with a conduction band anticrossing guarantees a lossless frequency window. When such a material is doped, producing plasmonic behavior, we study the conditions required for the plasmon frequency to fall in the lossless window, realizing lossless plasmons. Considering a generic class of HMAs with a conduction band anticrossing, we find universal contours in their parameter space within which lossless plasmons are possible for some doping range. Our analysis shows that HMAs with heavier effective masses are most promising for realizing a lossless plasmonic material.

preprint2021arXiv

Efficient quantum dot $\mathbf{k}\cdot\mathbf{p}$ in wurtzite systems including spatially varying elastic and dielectric constants and smooth alloy profile

We present Fourier-space based methods to calculate the electronic structure of wurtzite quantum dot systems with continuous alloy profiles. We incorporate spatially varying elastic and dielectric constants in strain and piezoelectric potential calculations. A method to incorporate smooth alloy profiles in all aspects of the calculations is presented. We demonstrate our methodology for the case of a 1D InGaN quantum dot array and show the importance of including these spatially varying parameters in the modeling of devices. We demonstrate that convergence of the lowest bound state energies is to good approximation determined by the largest wave vector used in constructing the states. We also present a novel approach of coupling strain into the $\mathbf{k}\cdot\mathbf{p}$ Hamiltonian, greatly reducing the computational cost of generating the Hamiltonian.

preprint2020arXiv

Automatic Feynman diagram generation for nonlinear optical spectroscopies

Perturbative nonlinear optical spectroscopies are powerful methods to understand the dynamics of excitonic and other condensed phase systems. Feynman diagrams have long provided the essential tool to understand and interpret experimental spectra and to organize the calculation of spectra for model systems. When optical pulses are strictly time ordered, only a small number of diagrams contribute, but in many experiments pulse-overlap effects are important for interpreting results. When pulses overlap, the number of contributing diagrams can increase rapidly, especially with higher order spectroscopies, and human error is especially likely when attempting to write down all of the diagrams. We present an automated Diagram Generator (DG) that generates all of the Feynman diagrams needed to calculate any $n^{\text{th}}$-order spectroscopic signal. We characterize all perturbative nonlinear spectroscopies by their associated phase-discrimination condition as well as the time intervals where pulse amplitudes are nonzero. Although the DG can be used to automate impulsive calculations, its greatest strength lies in automating finite pulse calculations where pulse overlaps are important. We consider third-order transient absorption spectroscopy and fifth-order exciton-exciton interaction 2D (EEI2D) spectroscopy, which are respectively described by 6 or 7 diagrams in the impulsive limit but 16 or 240 diagrams, respectively, when pulses overlap. The DG allows users to automatically include all relevant diagrams at relatively low computational cost, since the extra diagrams are only generated for the inter-pulse delays where they are relevant. For EEI2D spectroscopy, we show the important effects of including the overlap diagrams.

preprint2020arXiv

Efficiency Increase in Multijunction Monochromatic Photovoltaic Devices Due to Luminescent Coupling

We present a multijunction detailed balance model that includes the effects of luminescent coupling, light trapping and nonradiative recombination, suitable for treatment of multijunction solar cells and photonic power converters -- photovoltaic devices designed to convert narrow-band light. The model includes both specular and Lambertian reflections using a ray-optic formalism and treats nonradiative processes using an internal radiative efficiency. Using this model, we calculate and optimize the efficiency of multijunction photonic power converters for a range of material qualities and light-trapping schemes. Multijunction devices allow increased voltage with lower current, decreasing series resistance losses. We show that efficiency increases significantly with increased number of junctions, even without series resistance, when the device has an absorbing substrate. Such an increase does not occur when the device has a back reflector. We explain this effect using a simplified model, which illustrates the origin of the decreased radiative losses in multijunction devices on substrates.

preprint2020arXiv

Efficient numerical method for predicting nonlinear optical spectroscopies of open systems

Nonlinear optical spectroscopies are powerful tools for probing quantum dynamics in molecular and nanoscale systems. While intuition about ultrafast spectroscopies is often built by considering impulsive optical pulses, actual experiments have finite-duration pulses, which can be important for interpreting and predicting experimental results. We present a new freely available open source method for spectroscopic modeling, called Ultrafast Ultrafast (UF$^2$) Spectroscopy, which enables computationally efficient and convenient prediction of nonlinear spectra, including treatment of arbitrary finite duration pulse shapes. UF$^2$ is a Fourier-based method that requires diagonalization of the Liouvillian propagator of the system density matrix. We also present a Runge-Kutta Euler (RKE) direct propagation method. We include open-systems dynamics in the secular Redfield, full Redfield, and Lindblad formalisms with Markovian baths. For non-Markovian systems, the degrees of freedom corresponding to memory effects are brought into the system and treated nonperturbatively. We analyze the computational complexity of the algorithms and demonstrate numerically that, including the cost of diagonalizing the propagator, UF$^2$ is 20-200 times faster than the direct propagation method for secular Redfield models with arbitrary Hilbert space dimension; that it is similarly faster for full Redfield models at least up to system dimensions where the propagator requires more than 20 GB to store; and that for Lindblad models it is faster up to dimension near 100, with speedups for small systems by factors of over 500. UF$^2$ and RKE are part of a larger open source Ultrafast Software Suite, which includes tools for automatic generation and calculation of Feynman diagrams.

preprint2020arXiv

Plasma frequency in doped highly mismatched alloys

Highly mismatched alloys (HMAs) have band structures strongly modified due to the introduction of the alloying element. We consider HMAs where the isolated state of the alloying element is near the host conduction band, which causes the conduction band to split into two bands. We determine the bulk plasma frequency when the lower-energy band is partially occupied, as by doping, using a semi-analytical method based on a disorder-averaged Green's function. We include the nontrivial effects of interband transitions to the higher-energy band, which limit the plasma frequency to be less than an effective band gap. We show that the distribution of states in the split bands causes plasmons in HMAs to behave differently than plasmons in standard metals and semiconductors. The effective mass of the lower split band $m^*$ changes with alloy fraction, and we find that the plasmon frequency with small carrier concentration $n$ scales with $\sqrt{n}/m^*$ rather than the $\sqrt{n/m^*}$ that is expected in standard materials. We suggest experiments to observe these phenomena. Considering the typical range of material parameters in this group of alloys and taking a realistic example, we suggest that HMAs can serve as highly tunable low-frequency plasmonic materials.

preprint2020arXiv

Two-Photon Photocurrent in InGaN/GaN Nanowire Intermediate Band Solar Cells

Intermediate band solar cells hold the promise of ultrahigh power conversion efficiencies using a single semiconductor junction. Many current implementations use materials with bandgaps too small to achieve maximum efficiency or use cost-prohibitive substrates. Here we demonstrate a material system for intermediate band solar cells using InGaN/GaN quantum-dot-in-nanowire heterostructures grown directly on silicon to provide a lower cost, large-bandgap intermediate band solar cell platform. We demonstrate sequential two-photon current generation with sub-bandgap photons, the hallmark of intermediate band solar cell operation, through vertically stacked quantum dots in the nanowires. Near-infrared light biasing with an 850 nm laser intensity up to 200 W/cm2 increases the photocurrent above and below the bandgap by up to 19% at 78 K, and 44% at room temperature. The nanostructured III-nitride strategy provides a route towards realistic room temperature intermediate band solar cells while leveraging the cost benefits of silicon substrates.

preprint2019arXiv

Efficiency limits of electronically-coupled upconverter and quantum ratchet solar cells using detailed balance

The intermediate band solar cell (IBSC) and quantum ratchet solar cell (QRSC) have the potential to surpass the efficiency of standard single-junction solar cells by allowing sub-gap photon absorption through states deep inside the band gap. High efficiency IBSC and QRSC devices have not yet been achieved, however, since introducing mid-gap states also increases recombination, which can harm the device. We consider the electronically coupled upconverter (ECUC) solar cell and show that it can achieve the same efficiencies as the QRSC. Although they are equivalent in the detailed balance limit, the ECUC is less sensitive to nonradiative processes, which makes it a more practical implementation for IB devices. We perform a case study of crystalline-silicon based ECUC cells, focusing on hydrogenated amorphous silicon as the upconverter material and highlighting potential dopants for the ECUC. These results illustrate a new path for the development of IB-based devices.