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Lu Hua Li

Lu Hua Li appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallphysics.app-phphysics.optics

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Published work

18 published item(s)

preprint2021arXiv

Mechanical Properties of Atomically Thin Tungsten Dichalcogenides: WS$_2$, WSe$_2$ and WTe$_2$

Two-dimensional (2D) tungsten disulfide (WS$_2$), tungsten diselenide (WSe$_2$), and tungsten ditelluride (WTe$_2$) draw increasing attention due to their attractive properties deriving from the heavy tungsten and chalcogenide atoms, but their mechanical properties are still mostly unknown. Here, we determine the intrinsic and air-aged mechanical properties of mono-, bi-, and trilayer (1-3L) WS$_2$, WSe$_2$ and WTe$_2$ using a complementary suite of experiments and theoretical calculations. High-quality 1L WS$_2$ has the highest Young's modulus (302.4+-24.1 GPa) and strength (47.0+-8.6 GPa) of the entire family, overpassing those of 1L WSe$_2$ (258.6+-38.3 and 38.0+-6.0 GPa, respectively) and WTe$_2$ (149.1+-9.4 and 6.4+-3.3 GPa, respectively). However, the elasticity and strength of WS$_2$ decrease most dramatically with increased thickness among the three materials. We interpret the phenomenon by the different tendencies for interlayer sliding in equilibrium state and under in-plane strain and out-of-plane compression conditions in the indentation process, revealed by finite element method (FEM) and density functional theory (DFT) calculations including van der Waals (vdW) interactions. We also demonstrate that the mechanical properties of the high-quality 1-3L WS$_2$ and WSe$_2$ are largely stable in the air for up to 20 weeks. Intriguingly, the 1-3L WSe$_2$ shows increased modulus and strength values with aging in the air. This is ascribed to oxygen doping, which reinforces the structure. The present study will facilitate the design and use of 2D tungsten dichalcogenides in applications, such as strain engineering and flexible field-effect transistors (FETs).

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Atomically Thin Boron Nitride as an Ideal Spacer for Metal-Enhanced Fluorescence

The metal-enhanced fluorescence (MEF) considerably enhances the luminescence for various applications, but its performance largely depends on the dielectric spacer between the fluorophore and plasmonic system. It is still challenging to produce a defect-free spacer having an optimized thickness with a subnanometer accuracy that enables reusability without affecting the enhancement. In this study, we demonstrate the use of atomically thin hexagonal boron nitride (BN) as an ideal MEF spacer owing to its multifold advantages over the traditional dielectric thin films. With rhodamine 6G as a representative fluorophore, it largely improves the enhancement factor (up to ~95+-5), sensitivity (10^-8 M), reproducibility, and reusability (~90% of the plasmonic activity is retained after 30 cycles of heating at 350 °C in air) of MEF. This can be attributed to its two-dimensional structure, thickness control at the atomic level, defect-free quality, high affinities to aromatic fluorophores, good thermal stability, and excellent impermeability. The atomically thin BN spacers could increase the use of MEF in different fields and industries.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Mechanical Properties of Atomically Thin Boron Nitride and the Role of Interlayer Interactions

Atomically thin boron nitride (BN) nanosheets are important two-dimensional nanomaterials with many unique properties distinct from those of graphene, but the investigation of their mechanical properties still greatly lacks. Here we report that high-quality single-crystalline mono- and few-layer BN nanosheets are one of the strongest electrically insulating materials. More intriguingly, few-layer BN shows mechanical behaviors quite different from those of few-layer graphene under indentation. In striking contrast to graphene, whose strength decreases by more than 30% when the number of layers increases from 1 to 8, the mechanical strength of BN nanosheets is not sensitive to increasing thickness. We attribute this difference to the distinct interlayer interactions and hence sliding tendencies in these two materials under indentation. The significantly better mechanical integrity of BN nanosheets makes them a more attractive candidate than graphene for several applications, e.g. as mechanical reinforcements.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Outstanding Thermal Conductivity of Single Atomic Layer Isotope-Modified Boron Nitride

Materials with high thermal conductivities (k) is valuable to solve the challenge of waste heat dissipation in highly integrated and miniaturized modern devices. Herein, we report the first synthesis of atomically thin isotopically pure hexagonal boron nitride (BN) and its one of the highest k among all semiconductors and electric insulators. Single atomic layer (1L) BN enriched with 11B has a k up to 1009 W/mK at room temperature. We find that the isotope engineering mainly suppresses the out-of-plane optical (ZO) phonon scatterings in BN, which subsequently reduces acoustic-optical scatterings between ZO and transverse acoustic (TA) and longitudinal acoustic (LA) phonons. On the other hand, reducing the thickness to single atomic layer diminishes the interlayer interactions and hence Umklapp scatterings of the out-of-plane acoustic (ZA) phonons, though this thickness-induced k enhancement is not as dramatic as that in naturally occurring BN. With many of its unique properties, atomically thin monoisotopic BN is promising on heat management in van der Waals (vdW) devices and future flexible electronics. The isotope engineering of atomically thin BN may also open up other appealing applications and opportunities in 2D materials yet to be explored.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Raman Signature and Phonon Dispersion of Atomically Thin Boron Nitride

Raman spectroscopy has become an essential technique to characterize and investigate graphene and many other two-dimensional materials. However, there still lacks consensus on the Raman signature and phonon dispersion of atomically thin boron nitride (BN), which has many unique properties distinct from graphene. Such a knowledge gap greatly affects the understanding of basic physical and chemical properties of atomically thin BN as well as the use of Raman spectroscopy to study these nanomaterials. Here, we use both experiment and simulation to reveal the intrinsic Raman signature of monolayer and few-layer BN. We find experimentally that atomically thin BN without interaction with substrate has a G band frequency similar to that of bulk hexagonal BN, but strain induced by substrate can cause pronounced Raman shifts. This is in excellent agreement with our first-principles density functional theory (DFT) calculations at two levels of theory, including van der Waals dispersion forces (opt-vdW) and a fractional of the exact exchange from Hartree-Fock (HF) theory through hybrid HSE06 functional. Both calculations demonstrate that the intrinsic E2g mode of BN does not depend sensibly on the number of layers. Our simulations also suggest the importance of the exact exchange mixing parameter in calculating the vibrational modes in BN, as it determines the fraction of HF exchange included in the DFT calculations.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Two-dimensional van der Waals Heterostructures for Synergistically Improved Surface Enhanced Raman Spectroscopy

Surface enhanced Raman spectroscopy (SERS) is a precise and non-invasive analytical technique that is widely used in chemical analysis, environmental protection, food processing, pharmaceutics, and diagnostic biology. However, it is still a challenge to produce highly sensitive and reusable SERS substrates with minimum fluorescence background. In this work, we propose the use of van der Waals heterostructures of two-dimensional materials (2D materials) to cover plasmonic metal nanoparticles to solve this challenge. The heterostructures of atomically thin boron nitride (BN) and graphene provide synergistic effects: (1) electrons could tunnel through the atomically thin BN, allowing the charge transfer between graphene and probe molecules to suppress fluorescence background; (2) the SERS sensitivity is enhanced by graphene via chemical enhancement mechanism (CM) in addition to electromagnetic field mechanism (EM); (3) the atomically thin BN protects the underlying graphene and Ag nanoparticles from oxidation during heating for regeneration at 360 °C in the air so that the SERS substrates could be reused. These advances will facilitate wider applications of SERS, especially on the detection of fluorescent molecules with higher sensitivity.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Electronic polarizability as the fundamental variable in the dielectric properties of two-dimensional materials

The dielectric constant, which defines the polarization of the media, is a key quantity in condensed matter. It determines several electronic and optoelectronic properties important for a plethora of modern technologies from computer memory to field effect transistors and communication circuits. Moreover, the importance of the dielectric constant in describing electromagnetic interactions through screening plays a critical role in understanding fundamental molecular interactions. Here we show that despite its fundamental transcendence, the dielectric constant does not define unequivocally the dielectric properties of two-dimensional (2D) materials due to the locality of their electrostatic screening. Instead, the electronic polarizability correctly captures the dielectric nature of a 2D material which is united to other physical quantities in an atomically thin layer. We reveal a long-sought universal formalism where electronic, geometrical and dielectric properties are intrinsically correlated through the polarizability opening the door to probe quantities yet not directly measurable including the real covalent thickness of a layer. We unify the concept of dielectric properties in any material dimension finding a global dielectric anisotropy index defining their controllability through dimensionality.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Atomically Thin Boron Nitride: Unique Properties and Applications

Atomically thin boron nitride (BN) is an important two-dimensional (2D) nanomaterial, with many properties distinct from graphene. In this feature article, these unique properties and associated applications often not possible from graphene are outlined. The article starts with characterization and identification of atomically thin BN. It is followed by demonstrating their strong oxidation resistance at high temperatures and applications in protecting metals from oxidation and corrosion. As flat insulators, BN nanosheets are ideal dielectric substrates for surface enhanced Raman spectroscopy (SERS) and electronic devices based on 2D heterostructures. The light emission of BN nanosheets in the deep ultraviolet (DUV) and ultraviolet (UV) regions are also included for its scientific and technological importance. The last part is dedicated to synthesis, characterization, and optical properties of BN nanoribbons, a special form of nanosheets.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Boron Nitride Nanosheet Veiled Gold Nanoparticles for Surface Enhanced Raman Scattering

Atomically thin boron nitride (BN) nanosheets have many properties desirable for surface enhanced Raman spectroscopy (SERS). BN nanosheets have a strong surface adsorption capability towards airborne hydrocarbon and aromatic molecules. For maximized adsorption area and hence SERS sensitivity, atomically thin BN nanosheet covered gold nanoparticles have been prepared for the first time. When placed on top of metal nanoparticles, atomically thin BN nanosheets closely follow their contours so that the plasmonic hot spots are retained. Electrically insulating BN nanosheets also act as a barrier layer to eliminate metal-induced disturbance in SERS. Moreover, the SERS substrates veiled by BN nanosheets show an outstanding reusability in the long term. As the result, the sensitivity, reproducibility and reusability of SERS substrates can be greatly improved. We also demonstrate that large BN nanosheets produced by chemical vapor deposition can be used to scale up the proposed SERS substrate for practical application.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Boron Nitride Nanosheets Improve Sensitivity and Reusability of Surface Enhanced Raman Spectroscopy

Surface enhanced Raman spectroscopy (SERS) is a useful multidisciplinary analytic technique. However, it is still a challenge to produce SERS substrates that are highly sensitive, reproducible, stable, reusable, and scalable. Here, we demonstrate that atomically thin boron nitride (BN) nanosheets have many unique and desirable properties to help solve this challenge. The synergic effect of the atomic thickness, high flexibility, stronger surface adsorption capability, electrical insulation, impermeability, high thermal and chemical stability of BN nanosheets can increase the Raman sensitivity by up to two orders, and in the meantime attain long-term stability and extraordinary reusability not achievable by other materials. These advances will greatly facilitate the wider use of SERS in many fields.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Quantum Emission from Defects in Single Crystal Hexagonal Boron Nitride

Bulk hexagonal boron nitride (hBN) is a highly nonlinear natural hyperbolic material that attracts major attention in modern nanophotonics applications. However, studies of its optical properties in the visible part of the spectrum and quantum emitters hosted by bulk hBN have not been reported to date. In this work we study the emission properties of hBN crystals in the red spectral range using sub-bandgap optical excitation. Quantum emission from defects is observed at room temperature and characterized in detail. Our results advance the use of hBN in quantum nanophotonics technologies and enhance our fundamental understanding of its optical properties.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Boron Nitride Nanosheets as Improved and Reusable Substrates for Gold Nanoparticles Enabled Surface Enhanced Raman Spectroscopy

Atomically thin boron nitride (BN) nanosheets have been found an excellent substrate for noble metal particles enabled surface enhanced Raman spectroscopy (SERS), thanks to their good adsorption of aromatic molecules, high thermal stability and weak Raman scattering. Faceted gold (Au) nanoparticles have been synthesized on BN nanosheets by a simple but controllable and reproducible sputtering and annealing method. The size and density of the Au particles can be controlled by sputtering time, current and annealing temperature etc. Under the same sputtering and annealing conditions, the Au particles on BN of different thicknesses show various sizes because the surface diffusion coefficients of Au depends on the thickness of BN. Intriguingly, decorated with similar morphology and distribution of Au particles, BN nanosheets exhibit better Raman enhancements than silicon substrate as well as bulk BN crystals. Additionally, BN nanosheets show no noticeable SERS signal and hence cause no interference to the Raman signal of analyte. The Au/BN substrates can be reused by heating in air to remove adsorbed analyte without loss of SERS enhancement.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Boron Nitride Nanosheets for Metal Protection

Although the high impermeability of graphene makes it an excellent barrier to inhibit metal oxidation and corrosion, graphene can form a galvanic cell with the underlying metal that promotes corrosion of the metal in the long term. Boron nitride (BN) nanosheets which have a similar impermeability could be a better choice as protective barrier, because they are more thermally and chemically stable than graphene and, more importantly, do not cause galvanic corrosion due to their electrical insulation. In this study, the performance of commercially available BN nanosheets grown by chemical vapor deposition as a protective coating on metal has been investigated. The heating of the copper foil covered with the BN nanosheet at 250 °C in air over 100 h results in dramatically less oxidation than the bare copper foil heated for 2 h under the same conditions. The electrochemical analyses reveal that the BN nanosheet coating can increase open circuit potential and possibly reduce oxidation of the underlying copper foil in sodium chloride solution. These results indicate that BN nanosheets are a good candidate for oxidation and corrosion protection, although conductive atomic force microscopy analyses show that the effectiveness of the protection relies on the quality of BN nanosheets.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Boron Nitride Nanotube Films Grown From Boron Ink Painting

The growth of nanotube films on various substrates and surfaces is vital for applications in nanoscale functional devices. We report a simple and versatile boron (B) ink painting method that enables high-density boron nitride nanotube (BNNT) films with any desired pattern to be grown on, and firmly attached to, different surfaces. In the method, special B ink is first painted, sprayed or inkjet printed at desired location with required pattern, and then the ink layer is annealed in a nitrogen-containing atmosphere to form BNNT film. The B ink is a liquid mixture of ball-milled B particles, metal nitrate and ethanol. This is the first method capable of growing BNNTs on complex non-flat surfaces, which greatly broadens the potential application of BNNTs. For example, it is demonstrated that a BNNT coated steel mesh can separate water and oil on a microliter scale; a needle given an internal BNNT coating could greatly enhance microfluidic transport; and a coated screw could be used to minimize wear at the interface.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Dielectric Screening in Atomically Thin Boron Nitride Nanosheets

Two-dimensional (2D) hexagonal boron nitride (BN) nanosheets are excellent dielectric substrate for graphene, molybdenum disulfide and many other 2D nanomaterials based electronic and photonic devices. To optimize the performance of these 2D devices, it is essential to understand the dielectric screening properties of BN nanosheets as a function of the thickness. Here, electric force microscopy along with theoretical calculations based on both state-of-the-art first-principles calculations with van der Waals interactions under consideration and non-linear Thomas-Fermi theory models are used to investigate the dielectric screening in high-quality BN nanosheets of different thicknesses. It is found that atomically thin BN nanosheets are less effective in electric field screening, but the screening capability of BN shows a relatively weak dependence on the layer thickness.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Electric Contributions to Magnetic Force Microscopy Response from Graphene and MoS2 Nanosheets

Magnetic force microscopy (MFM) signals have recently been detected from whole pieces of mechanically exfoliated graphene and molybdenum disulfide (MoS2) nanosheets and magnetism of the two nanomaterials was claimed based on these observations. However, non-magnetic interactions or artefacts are commonly associated with MFM signals, which makes the interpretation of MFM signals not straightforward. A systematic investigation has been done to examine possible sources of the MFM signals from graphene and MoS2 nanosheets and whether the MFM signals can be correlated with magnetism. It is found that the MFM signals have significant non-magnetic contributions due to capacitive and electrostatic interactions between the nanosheets and conductive cantilever tip, as demonstrated by electric force microscopy (EFM) and scanning Kevin probe microscopy (SKPM) analyses. In addition, the MFM signals of graphene and MoS2 nanosheets are not responsive to reversed magnetic field of the magnetic cantilever tip. Therefore, the observed MFM response is mainly from electric artefacts and not compelling enough to correlate with magnetism of graphene and MoS2 nanosheets.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Observation of Active Sites for Oxygen Reduction Reaction on Nitrogen-doped Multilayer Graphene

Active sites and catalytic mechanism of nitrogen-doped graphene in oxygen reduction reaction (ORR) have been extensively studied but are still inconclusive, partly due to the lack of an experimental method that can detect the active sites. It is proposed in this report that the active sites on nitrogen-doped graphene can be determined via the examination of its chemical composition change before and after ORR. Synchrotron-based X-ray photoelectron spectroscopy analyses of three nitrogen-doped multilayer graphene samples reveal that oxygen reduction intermediate OH(ads) which should chemically attach to the active sites remains on the carbon atoms neighboring pyridinic nitrogen after ORR. In addition, a high amount of the OH(ads) attachment after ORR corresponds to a high catalytic efficiency and vice versa. These pinpoint that the carbon atoms close to pyridinic nitrogen are the main active sites among the different nitrogen doping configurations.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Strong Oxidation Resistance of Atomically Thin Boron Nitride Nanosheets

Investigation on oxidation resistance of two-dimensional (2D) materials is critical for many of their applications, because 2D materials could have higher oxidation kinetics than their bulk counterparts due to predominant surface atoms and structural distortions. In this study, the oxidation behavior of high-quality boron nitride (BN) nanosheets of 1-4 layer thick has been examined by heating in air. Atomic force microscopy and Raman spectroscopy analyses reveal that monolayer BN nanosheets can sustain up to 850 °C and the starting temperature of oxygen doping/oxidation of BN nanosheets only slightly increases with the increase of nanosheet layer and depends on heating conditions. Elongated etch lines are found on the oxidized monolayer BN nanosheets, suggesting that the BN nanosheets are first cut along the chemisorbed oxygen chains and then the oxidative etching grows perpendicularly to these cut lines. The stronger oxidation resistance of BN nanosheets suggests that they are more preferable for high-temperature applications than graphene.

0 citations0 reviewsNo code linkedOpen access