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Researcher profile

Longlong Yang

Longlong Yang contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallphysics.opticsquant-ph

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Published work

6 published item(s)

preprint2022arXiv

Single charge control of localized excitons in heterostructures with ferroelectric thin films and two-dimensional transition metal dichalcogenides

Single charge control of localized excitons (LXs) in two-dimensional transition metal dichalcogenides (TMDCs) is crucial for potential applications in quantum information processing and storage. However, traditional electrostatic doping method with applying metallic gates onto TMDCs may cause the inhomogeneous charge distribution, optical quench, and energy loss. Here, by locally controlling the ferroelectric polarization of the ferroelectric thin film BiFeO3 (BFO) with a scanning probe, we can deterministically manipulate the doping type of monolayer WSe2 to achieve the p-type and n-type doping. This nonvolatile approach can maintain the doping type and hold the localized excitonic charges for a long time without applied voltage. Our work demonstrated that ferroelectric polarization of BFO can control the charges of LXs effectively. Neutral and charged LXs have been observed in different ferroelectric polarization regions, confirmed by magnetic optical measurement. Highly circular polarization degree about 90 % of the photon emission from these quantum emitters have been achieved in high magnetic fields. Controlling single charge of LXs in a non-volatile way shows a great potential for deterministic photon emission with desired charge states for photonic long-term memory.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Position-dependent chiral coupling between single quantum dots and cross waveguides

Chiral light-matter interaction between photonic nanostructures with quantum emitters shows great potential to implement spin-photon interfaces for quantum information processing. Position-dependent spin momentum locking of the quantum emitter is important for these chiral coupled nanostructures. Here, we report the position-dependent chiral coupling between quantum dots (QDs) and cross waveguides both numerically and experimentally. Four quantum dots distributed at different positions in the cross section are selected to characterize the chiral properties of the device. Directional emission is achieved in a single waveguide as well as in both two waveguides simultaneously. In addition, the QD position can be determined with the chiral contrasts from four outputs. Therefore, the cross waveguide can function as a one-way unidirectional waveguide and a circularly polarized beam splitter by placing the QD in a rational position, which has potential applications in spin-to-path encoding for complex quantum optical networks at the single-photon level.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Cavity Quantum Electrodynamics with Second-Order Topological Corner State

Topological photonics provides a new paradigm in studying cavity quantum electrodynamics with robustness to disorder. In this work, we demonstrate the coupling between single quantum dots and the second-order topological corner state. Based on the second-order topological corner state, a topological photonic crystal cavity is designed and fabricated into GaAs slabs with quantum dots embedded. The coexistence of corner state and edge state with high quality factor close to 2000 is observed. The enhancement of photoluminescence intensity and emission rate are both observed when the quantum dot is on resonance with the corner state. This result enables the application of topology into cavity quantum electrodynamics, offering an approach to topological devices for quantum information processing.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Electron and hole g tensors of neutral and charged excitons in single quantum dots by high-resolution photocurrent spectroscopy

We report a high-resolution photocurrent (PC) spectroscopy of a single self-assembled InAs/GaAs quantum dot (QD) embedded in an n-i-Schottky device with an applied vector magnetic field. The PC spectra of positively charged exciton (X$^+$) and neutral exciton (X$^0$) are obtained by two-color resonant excitation. With an applied magnetic field in Voigt geometry, the double $Λ$ energy level structure of X$^+$ and the dark states of X$^0$ are observed in PC spectra clearly. In Faraday geometry, the PC amplitude of X$^+$ decreases and then quenches with the increasing of the magnetic field, which provides a new way to determine the relative sign of the electron and the hole g-factors. With an applied vector magnetic field, the electron and the hole g-factor tensors of X$^+$ and X$^0$ are obtained. The anisotropy of the hole g-factors of both X$^+$ and X$^0$ is larger than that of the electron.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Identifying defect-related quantum emitters in monolayer WSe$_2$

Monolayer transition metal dichalcogenides have recently attracted great interests because the quantum dots embedded in monolayer can serve as optically active single photon emitters. Here, we provide an interpretation of the recombination mechanisms of these quantum emitters through polarization-resolved and magneto-optical spectroscopy at low temperature. Three types of defect-related quantum emitters in monolayer tungsten diselenide (WSe$_2$) are observed, with different exciton g factors of 2.02, 9.36 and unobservable Zeeman shift, respectively. The various magnetic response of the spatially localized excitons strongly indicate that the radiative recombination stems from the different transitions between defect-induced energy levels, valance and conduction bands. Furthermore, the different g factors and zero-field splittings of the three types of emitters strongly show that quantum dots embedded in monolayer have various types of confining potentials for localized excitons, resulting in electron-hole exchange interaction with a range of values in the presence of anisotropy. Our work further sheds light on the recombination mechanisms of defect-related quantum emitters and paves a way toward understanding the role of defects in single photon emitters in atomically thin semiconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Large photoluminescence enhancement by an out-of-plane magnetic field in exfoliated WS$_2$ flakes

We report an out-of-plane magnetic field induced large photoluminescence enhancement in WS${}_2$ flakes at $4$ K, in contrast to the photoluminescence enhancement provided by in-plane field in general. Two mechanisms for the enhancement are proposed. One is a larger overlap of electron and hole caused by the magnetic field induced confinement. The other is that the energy difference between $Λ$ and K valleys is reduced by magnetic field, and thus enhancing the corresponding indirect-transition trions. Meanwhile, the Landé g factor of the trion is measured as $-0.8$, whose absolute value is much smaller than normal exciton, which is around $|-4|$. A model for the trion g factor is presented, confirming that the smaller absolute value of Landé g factor is a behavior of this $Λ$-K trion. By extending the valley space, we believe this work provides a further understanding of the valleytronics in monolayer transition metal dichalcogenides.

0 citations0 reviewsNo code linkedOpen access