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Lizhao Liu

Lizhao Liu contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2022arXiv

DAS: Densely-Anchored Sampling for Deep Metric Learning

Deep Metric Learning (DML) serves to learn an embedding function to project semantically similar data into nearby embedding space and plays a vital role in many applications, such as image retrieval and face recognition. However, the performance of DML methods often highly depends on sampling methods to choose effective data from the embedding space in the training. In practice, the embeddings in the embedding space are obtained by some deep models, where the embedding space is often with barren area due to the absence of training points, resulting in so called "missing embedding" issue. This issue may impair the sample quality, which leads to degenerated DML performance. In this work, we investigate how to alleviate the "missing embedding" issue to improve the sampling quality and achieve effective DML. To this end, we propose a Densely-Anchored Sampling (DAS) scheme that considers the embedding with corresponding data point as "anchor" and exploits the anchor's nearby embedding space to densely produce embeddings without data points. Specifically, we propose to exploit the embedding space around single anchor with Discriminative Feature Scaling (DFS) and multiple anchors with Memorized Transformation Shifting (MTS). In this way, by combing the embeddings with and without data points, we are able to provide more embeddings to facilitate the sampling process thus boosting the performance of DML. Our method is effortlessly integrated into existing DML frameworks and improves them without bells and whistles. Extensive experiments on three benchmark datasets demonstrate the superiority of our method.

preprint2020arXiv

Giant renormalization of correlation strength in 1T-TaS2 by lattice vibration

The lattice thermodynamics of a 1T-TaS2 layer, e.g. the spontaneous formation of a sqrt13*sqrt13 commensurate charge density wave (CCDW) and vibrations around the equilibrium position, is calculated by ab initio molecular dynamics. Based on that, we examine how the ground-state electronic structure is renormalized by lattice temperature. We show that the band gap within the density functional theory plus onsite-U correction shrinks by half when the temperature raises from 0 K to 200 K. The gap size reduction is one order of magnitude larger than the temperature variation in energy. This giant temperature dependence is closely related to the CCDW-triggered Mottness in 1T-TaS2, and is expected to result in unconventional thermodynamic properties.

preprint2020arXiv

Renormalization of the Mott gap by lattice entropy: The case of 1T-TaS2

In many transition-metal oxides and dichalcogenides, the electronic and lattice degrees of freedom are strongly coupled, giving rise to remarkable phenomena, such as metal-insulator transition (MIT) and charge-density wave (CDW) order. We study this interplay by tracing the instant electronic structure under ab initio molecular dynamics. Applying this method to a 1T-TaS2 layer, we show that the CDW-triggered Mott gap undergoes a continuous reduction as the lattice temperature raises, despite a nearly constant CDW amplitude. Before the CDW order undergoes a sharp first-order transition around the room temperature, the dynamical CDW fluctuation already shrinks the Mott gap size by half. The gap size reduction is one order of magnitude larger than the lattice temperature variation. Our calculation not only provides an important clue to understand the thermodynamics behavior in 1T-TaS2, but also demonstrates a general approach to quantify the lattice entropy effect in MIT.

preprint2019arXiv

Physical properties and device applications of graphene oxide

Graphene oxide (GO), the functionalized graphene with oxygenated groups (mainly epoxy and hydroxyl), has attracted resurgent interests in the past decade owing to its large surface area, superior physical and chemical properties, and easy composition with other materials via surface functional groups. Usually, GO is used as an important raw material for mass production of graphene via reduction. However, under different conditions, the coverage, types, and arrangements of oxygen-containing groups in GO can be varied, which give rise to excellent and controllable physical properties, such as tunable electronic and mechanical properties depending closely on oxidation degree, suppressed thermal conductivity, optical transparency and fluorescence, and nonlinear optical properties. Based on these outstanding properties, many electronic, optical, optoelectronic, and thermoelectric devices with high performance can be achieved on the basis of GO. Here we present a comprehensive review on recent progress of GO, focusing on the atomic structures, fundamental physical properties, and related device applications, including transparent and flexible conductors, field-effect transistors, electrical and optical sensors, fluorescence quenchers, optical limiters and absorbers, surface enhanced Raman scattering detectors, solar cells, light-emitting diodes, and thermal rectifiers.