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Lingfei Li

Lingfei Li contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2022arXiv

A Two-Step Framework for Arbitrage-Free Prediction of the Implied Volatility Surface

We propose a two-step framework for predicting the implied volatility surface over time without static arbitrage. In the first step, we select features to represent the surface and predict them over time. In the second step, we use the predicted features to construct the implied volatility surface using a deep neural network (DNN) model by incorporating constraints that prevent static arbitrage. We consider three methods to extract features from the implied volatility data: principal component analysis, variational autoencoder and sampling the surface, and we predict these features using LSTM. Using a long time series of implied volatility data for S\&P500 index options to train our models, we find two feature construction methods, sampling the surface and variational autoencoders combined with DNN for surface construction, are the best performers in out-of-sample prediction. In particular, they outperform a classical method substantially. Furthermore, the DNN model for surface construction not only removes static arbitrage, but also significantly reduces the prediction error compared with a standard interpolation method. Our framework can also be used to simulate the dynamics of the implied volatility surface without static arbitrage.

preprint2019arXiv

Edge-Epitaxial Growth of InSe Nanowires toward High-Performance Photodetectors

Semiconducting nanowires offer many opportunities for electronic and optoelectronic device applications due to their special geometries and unique physical properties. However, it has been challenging to synthesize semiconducting nanowires directly on SiO2/Si substrate due to lattice mismatch. Here, we developed a catalysis-free approach to achieve direct synthesis of long and straight InSe nanowires on SiO2/Si substrate through edge-homoepitaxial growth. We further achieved parallel InSe nanowires on SiO2/Si substrate through controlling growth conditions. We attributed the underlying growth mechanism to selenium self-driven vapor-liquid-solid process, which is distinct from conventional metal-catalytic vapor-liquid-solid method widely used for growing Si and III-V nanowires. Furthermore, we demonstrated that the as-grown InSe nanowire-based visible light photodetector simultaneously possesses an extraordinary photoresponsivity of 271 A/W, ultrahigh detectivity of 1.57*10^14 Jones and a fast response speed of microsecond scale. The excellent performance of the photodetector indicates that as-grown InSe nanowires are promising in future optoelectronic applications. More importantly, the proposed edge-homoepitaxial approach may open up a novel avenue for direct synthesis of semiconducting nanowire arrays on SiO2/Si substrate.

preprint2019arXiv

Markov Chain Approximation of One-Dimensional Sticky Diffusions

We develop continuous time Markov chain (CTMC) approximation of one-dimensional diffusions with a lower sticky boundary. Approximate solutions to the action of the Feynman-Kac operator associated with a sticky diffusion and first passage probabilities are obtained using matrix exponentials. We show how to compute matrix exponentials efficiently and prove that a carefully designed scheme achieves second order convergence. We also propose a scheme based on CTMC approximation for the simulation of sticky diffusions, for which the Euler scheme may completely fail. The efficiency of our method and its advantages over alternative approaches are illustrated in the context of bond pricing in a sticky short rate model for low interest environment.