Researcher profile

Liliana D. Buda-Prejbeanu

Liliana D. Buda-Prejbeanu contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2022arXiv

Programmable skyrmion logic gates based on skyrmion tunneling

Magnetic skyrmions are promising candidates as elementary nanoscale bits in logic-in-memory devices, intrinsically merging high density memory and computing capabilities. Here we exploit the dynamics of skyrmions interacting with anisotropy energy barriers patterned by ion irradiation to design programmable logic gates. Using micromagnetic simulations with experimental parameters, we show that a fine tuning of the barrier height and width allows the selective tunneling of skyrmions between parallel nanotracks triggered by skyrmion-skyrmion interaction. This can be leveraged to design skyrmion De-multiplexer (DMux) logic gate which works solely using skyrmions as logic inputs. By cascading and connecting demultiplexer gates with a specific topology, we develop a fully programmable logic gate capable of producing any possible logic output as a sum of all minterms generated by a given set of inputs without requiring any complex additional electric/magnetic interconversion. The proposed design is fully conservative and cascadable and paves a new pathway for full skyrmionic-based logic-in-memory devices.

preprint2022arXiv

Robust and programmable logic-in-memory devices exploiting skyrmion confinement and channeling using local energy barriers

Magnetic skyrmions are promising candidates for logic-in-memory applications, intrinsically merging high density non-volatile data storage with computing capabilities, owing to their nanoscale size, fast motion, and mutual repulsions. However, concepts proposed so far suffer from reliability issues as well as inefficient conversion of magnetic information to electrical signals. In this paper, we propose a logic-in-memory device which exploits skyrmion confinement and channeling using anisotropy energy barriers to achieve reliable data storage and synchronous shift in racetracks combined with cascadable and reprogrammable logics relying purely on magnetic interactions. The device combines a racetrack shift register based on skyrmions confined in nanodots with Full Adder (FA) gates. The designed FA is reprogrammable and cascadable and can also be used to perform simple logic operations such as AND, OR, NOT, NAND, XOR and NXOR. The monolithic design of the logic gate and the absence of any complex electrical contacts makes the device ideal for integration with conventional CMOS circuitry.

preprint2021arXiv

All-optical spin switching probability in [Tb/Co] multilayers

Since the first experimental observation of all-optical switching phenomena, intensive research has been focused on finding suitable magnetic systems that can be integrated as storage elements within spintronic devices and whose magnetization can be controlled through ultra-short single laser pulses. We report here atomistic spin simulations of all-optical switching in multilayered structures alternating n monolayers of Tb and m monolayers of Co. By using a two temperature model, we numerically calculate the thermal variation of the magnetization of each sublattice as well as the magnetization dynamics of [Tbn/Com] multilayers upon incidence of a single laser pulse. In particular, the condition to observe thermally-induced magnetization switching is investigated upon varying systematically both the composition of the sample (n,m) and the laser fluence. The samples with one monolayer of Tb as [Tb1/Co2] and [Tb1/Co3] are showing thermally induced magnetization switching above a fluence threshold. The reversal mechanism is mediated by the residual magnetization of the Tb lattice while the Co is fully demagnetized in agreement with the models developed for ferrimagnetic alloys. The switching is however not fully deterministic but the error rate can be tuned by the damping parameter. Increasing the number of monolayers the switching becomes completely stochastic. The intermixing at the Tb/Co interfaces appears to be a promising way to reduce the stochasticity. These results predict for the first time the possibility of TIMS in [Tb/Co] multilayers and suggest the occurrence of sub-picosecond magnetization reversal using single laser pulses.

preprint2020arXiv

Realizing an Isotropically Coercive Magnetic Layer for Memristive Applications by Analogy to Dry Friction

We investigate the possibility of realizing a spintronic memristive device based on the dependence of the tunnel conductance on the relative angle between the magnetization of the two magnetic electrodes in in-plane magnetized tunnel junctions. For this, it is necessary to design a free layer whose magnetization can be stabilized along several or even any in-plane direction between the parallel and the antiparallel magnetic configurations. We experimentally show that this can be achieved by exploiting antiferromagnet-ferromagnet exchange interactions in a regime where the antiferromagnet is thin enough to induce enhanced coercivity and no exchange bias. The frustration of exchange interactions at the interfaces due to competing ferro- and antiferromagnetic interactions is at the origin of an isotropic dissipation mechanism yielding isotropic coercivity. From a modeling point of view, it is shown that this isotropic dissipation can be described by a dry friction term in the Landau-Lifshitz-Gilbert equation. The influence of this dry friction term on the magnetization dynamics of an in-plane magnetized layer submitted to a rotating in-plane field is investigated both analytically and numerically. The possibility to control the free layer magnetization orientation in an in-plane magnetized magnetic tunnel junction by using the spin transfer torque from an additional perpendicular polarizer is also investigated through macrospin simulation. It is shown that the memristor function can be achieved by the injection of current pulses through the stack in the presence of an in-plane static field transverse to the reference layer magnetization, the aim of which is to limit the magnetization rotation between 0° and 180°.