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Johan Pelloux-Prayer

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cond-mat.mes-hall physics.app-ph physics.comp-ph

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preprint2022arXiv

Programmable skyrmion logic gates based on skyrmion tunneling

Magnetic skyrmions are promising candidates as elementary nanoscale bits in logic-in-memory devices, intrinsically merging high density memory and computing capabilities. Here we exploit the dynamics of skyrmions interacting with anisotropy energy barriers patterned by ion irradiation to design programmable logic gates. Using micromagnetic simulations with experimental parameters, we show that a fine tuning of the barrier height and width allows the selective tunneling of skyrmions between parallel nanotracks triggered by skyrmion-skyrmion interaction. This can be leveraged to design skyrmion De-multiplexer (DMux) logic gate which works solely using skyrmions as logic inputs. By cascading and connecting demultiplexer gates with a specific topology, we develop a fully programmable logic gate capable of producing any possible logic output as a sum of all minterms generated by a given set of inputs without requiring any complex additional electric/magnetic interconversion. The proposed design is fully conservative and cascadable and paves a new pathway for full skyrmionic-based logic-in-memory devices.

preprint2022arXiv

Robust and programmable logic-in-memory devices exploiting skyrmion confinement and channeling using local energy barriers

Magnetic skyrmions are promising candidates for logic-in-memory applications, intrinsically merging high density non-volatile data storage with computing capabilities, owing to their nanoscale size, fast motion, and mutual repulsions. However, concepts proposed so far suffer from reliability issues as well as inefficient conversion of magnetic information to electrical signals. In this paper, we propose a logic-in-memory device which exploits skyrmion confinement and channeling using anisotropy energy barriers to achieve reliable data storage and synchronous shift in racetracks combined with cascadable and reprogrammable logics relying purely on magnetic interactions. The device combines a racetrack shift register based on skyrmions confined in nanodots with Full Adder (FA) gates. The designed FA is reprogrammable and cascadable and can also be used to perform simple logic operations such as AND, OR, NOT, NAND, XOR and NXOR. The monolithic design of the logic gate and the absence of any complex electrical contacts makes the device ideal for integration with conventional CMOS circuitry.

preprint2016arXiv

Contact resistances in trigate and FinFET devices in a Non-Equilibrium Green's Functions approach

We compute the contact resistances $R_{\rm c}$ in trigate and FinFET devices with widths and heights in the 4 to 24 nm range using a Non-Equilibrium Green's Functions approach. Electron-phonon, surface roughness and Coulomb scattering are taken into account. We show that $R_{\rm c}$ represents a significant part of the total resistance of devices with sub-30 nm gate lengths. The analysis of the quasi-Fermi level profile reveals that the spacers between the heavily doped source/drain and the gate are major contributors to the contact resistance. The conductance is indeed limited by the poor electrostatic control over the carrier density under the spacers. We then disentangle the ballistic and diffusive components of $R_{\rm c}$ , and analyze the impact of different design parameters (cross section and doping profile in the contacts) on the electrical performances of the devices. The contact resistance and variability rapidly increase when the cross sectional area of the channel goes below $\simeq 50$ nm $^2$ . We also highlight the role of the charges trapped at the interface between silicon and the spacer material.

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