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Lili Zhang

Lili Zhang contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2026arXiv

High-pressure structural and lattice-dynamics study of Yttria-Stabilized Zirconia

The structural evolution of two selected compositions of Yttria-Stabilized Zirconia (YSZ), with 3mol% (3YSZ) and 8mol% (8YSZ) of Y2O3, have been investigated under pressure using in-situ synchrotron X-ray diffraction (XRD) and Raman spectroscopy in a diamond anvil cell up to 40 GPa (at room temperature).The close crystallographic relation between the observed structures and the relatively large difference in the atomic numbers of Y/Zr and O, imposes the simultaneous study using both techniques, aiming to fully elucidate the structural evolution under pressure. The results, by combining both techniques, reveal that for both 3YSZ and 8YSZ, pressure promotes higher-symmetry structures. Under initial compression, the minority at ambient conditions monoclinic phase (m-phase) gradually transforms towards t-phase, a transition that is concluded for both 3YSZ/8YSZ at ~10 GPa. At higher pressures, the solely remaining t-phase of 3YSZ transforms to the t'', that in turns transforms to the c-phase above 28 GPa. Likewise, for 8YSZ the coexistence of t- and t''-phases continue up to 31 GPa, where both transforms towards c-phase, that remains stable up to the highest pressure of this study. Upon pressure release, all observed transitions are fully reversible with negligible hysteresis, with the exception of the practical disappearance of the monoclinic phase at ambient conditions. Our study underscores the significance of simultaneously performing and analyzing the results of both XRD and Raman spectroscopy studies in relevant crystallographic systems. Moreover, it provides a route towards a ``structural purification'' of YSZ through the elimination of the m-phase aiming to improve material properties.

preprint2019arXiv

Edge-Epitaxial Growth of InSe Nanowires toward High-Performance Photodetectors

Semiconducting nanowires offer many opportunities for electronic and optoelectronic device applications due to their special geometries and unique physical properties. However, it has been challenging to synthesize semiconducting nanowires directly on SiO2/Si substrate due to lattice mismatch. Here, we developed a catalysis-free approach to achieve direct synthesis of long and straight InSe nanowires on SiO2/Si substrate through edge-homoepitaxial growth. We further achieved parallel InSe nanowires on SiO2/Si substrate through controlling growth conditions. We attributed the underlying growth mechanism to selenium self-driven vapor-liquid-solid process, which is distinct from conventional metal-catalytic vapor-liquid-solid method widely used for growing Si and III-V nanowires. Furthermore, we demonstrated that the as-grown InSe nanowire-based visible light photodetector simultaneously possesses an extraordinary photoresponsivity of 271 A/W, ultrahigh detectivity of 1.57*10^14 Jones and a fast response speed of microsecond scale. The excellent performance of the photodetector indicates that as-grown InSe nanowires are promising in future optoelectronic applications. More importantly, the proposed edge-homoepitaxial approach may open up a novel avenue for direct synthesis of semiconducting nanowire arrays on SiO2/Si substrate.

preprint2019arXiv

Persistent Insulator: Avoidance of Metallization at Megabar Pressures in Strongly Spin-Orbit-Coupled Sr2IrO4

It is commonly anticipated that an insulating state collapses in favor of an emergent metallic state at high pressures as the unit cell shrinks and the electronic bandwidth broadens to fill the insulating energy band gap. Here we report a rare insulating state that persists up to at least 185 GPa in the antiferromagnetic iridate Sr2IrO4, which is the archetypical spin-orbit-driven Jeff = 1/2 insulator. This study shows the electrical resistance of single-crystal Sr2IrO4 initially decreases with applied pressure, reaches a minimum in the range, 32 - 38 GPa, then abruptly rises to fully recover the insulating state with further pressure increases up to 185 GPa. Our synchrotron x-ray diffraction and Raman scattering data show the onset of the rapid increase in resistance is accompanied by a structural phase transition from the native tetragonal I41/acd phase to an orthorhombic Pbca phase (with much reduced symmetry) at 40.6 GPa. The clear-cut correspondence of these two anomalies is key to understanding the stability of the insulating state at megabar pressures: Pressure-induced, severe structural distortions prevent the expected metallization, despite the 26% volume compression attained at the highest pressure accessed in this study. Moreover, the resistance of Sr2IrO4 remains stable while the applied pressure is tripled from 61 GPa to 185 GPa. These results suggest that a novel type of electronic Coulomb correlation compensates the anticipated band broadening in strongly spin-orbit-coupled materials at megabar pressures.