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Li Tian

Li Tian appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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2 published item(s)

preprint2019arXiv

Arithmetic on Moran sets

Let $(\mathcal{M}, c_k,n_k)$ be a class of Moran sets. We assume that the convex hull of any $E\in (\mathcal{M}, c_k,n_k)$ is $[0,1]$. Let $A,B$ be two non-empty sets in $\mathbb{R}$. Suppose that $f$ is a continuous function defined on an open set $U\subset \mathbb{R}^{2}$. Denote the continuous image of $f$ by \begin{equation*} f_{U}(A,B)=\{f(x,y):(x,y)\in (A\times B)\cap U\}. \end{equation*} In this paper, we prove the following result. Let $E_1,E_2\in(\mathcal{M}, c_k, n_k)$. If there exists some $(x_0,y_0)\in (E_1\times E_2)\cap U$ such that $$\sup_{k\geq 1}\left\{1-c_kn_k\right\}<\left\vert \frac{\partial _{y}f|_{(x_{0},y_{0})}}{\partial _{x}f|_{(x_{0},y_{0})}}\right\vert <\inf_{k\geq 1}\left\{\dfrac{c_k}{1-n_kc_k}\right\},$$ then $f_U(E_1, E_2)$ contains an interior.

preprint2014arXiv

Mn as surfactant for the self-assembling of Al$_x$Ga$_{1-x}$N/GaN layered heterostructures

The structural analysis of GaN and Al$_x$Ga$_{1-x}$N/GaN heterostructures grown by metalorganic vapor phase epitaxy in the presence of Mn reveals how Mn affects the growth process, and in particular the incorporation of Al, the morphology of the surface, and the plastic relaxation of Al$_x$Ga$_{1-x}$N on GaN. Moreover, the doping with Mn promotes the formation of layered Al$_x$Ga$_{1-x}$N/GaN superlattice-like heterostructures opening wide perspective for controlling the segregation of ternary alloys during the crystal growth and for fostering the self-assembling of functional layered structures.