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Researcher profile

Leonardo C. Campos

Leonardo C. Campos contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallphysics.app-phphysics.optics

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Published work

7 published item(s)

preprint2022arXiv

Observation of well-defined Kohn-anomaly in high-quality graphene devices at room temperature

Due to its ultra-thin nature, the study of graphene quantum optoelectronics, like gate-dependent graphene Raman properties, is obscured by interactions with substrates and surroundings. For instance, the use of doped silicon with a capping thermal oxide layer limited the observation to low temperatures of a well-defined Kohn-anomaly behavior, related to the breakdown of the adiabatic Born-Oppenheimer approximation. Here, we design an optoelectronic device consisting of single-layer graphene electrically contacted with thin graphite leads, seated on an atomically flat hexagonal boron nitride (hBN) substrate and gated with an ultra-thin gold (Au) layer. We show that this device is optically transparent, has no background optical peaks and photoluminescence from the device components, and no generation of laser-induced electrostatic doping (photodoping). This allows for room-temperature gate-dependent Raman spectroscopy effects that have only been observed at cryogenic temperatures so far, above all the Kohn-anomaly phonon energy normalization. The new device architecture by decoupling graphene optoelectronic properties from the substrate effects, allows for the observation of quantum phenomena at room temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Raman spectra of twisted bilayer graphene close to the magic angle

In this work, we study the Raman spectra of twisted bilayer graphene samples as a function of their twist-angles ($θ$), ranging from 0.03$^\circ$ to 3.40$^\circ$, where local $θ$ are determined by analysis of their associated moire superlattices, as imaged by scanning microwave impedance microscopy. Three standard excitation laser lines are used (457, 532, and 633 nm wavelengths), and the main Raman active graphene bands (G and 2D) are considered. Our results reveal that electron-phonon interaction influences the G band&#39;s linewidth close to the magic angle regardless of laser excitation wavelength. Also, the 2D band lineshape in the $θ$ < 1$^\circ$ regime is dictated by crystal lattice and depends on both the Bernal (AB and BA) stacking bilayer graphene and strain soliton regions (SP). We propose a geometrical model to explain the 2D lineshape variations, and from it, we estimate the SP width when moving towards the magic angle.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Gate-tunable non-volatile photomemory effect in MoS$_2$ transistors

Non-volatile memory devices have been limited to flash architectures that are complex devices. Here, we present a unique photomemory effect in MoS$_2$ transistors. The photomemory is based on a photodoping effect - a controlled way of manipulating the density of free charges in monolayer MoS$_2$ using a combination of laser exposure and gate voltage application. The photodoping promotes changes on the conductance of MoS$_2$ leading to photomemory states with high memory on/off ratio. Such memory states are non-volatile with an expectation of retaining up to 50 % of the information for tens of years. Furthermore, we show that the photodoping is gate-tunable, enabling control of the recorded memory states. Finally, we propose a model to explain the photodoping, and we provide experimental evidence supporting such a phenomenon. In summary, our work includes the MoS$_2$ phototransistors in the non-volatile memory devices and expands the possibilities of memory application beyond conventional memory architectures.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Lattice dynamics localization in low-angle twisted bilayer graphene

A low twist angle between the two stacked crystal networks in bilayer graphene enables self-organized lattice reconstruction with the formation of a periodic domain. This superlattice modulates the vibrational and electronic structures, imposing new rules for electron-phonon coupling and the eventual observation of strong correlation and superconductivity. Direct optical images of the crystal superlattice in reconstructed twisted bilayer graphene are reported here, generated by the inelastic scattering of light in a nano-Raman spectroscope. The observation of the crystallographic structure with visible light is made possible due to lattice dynamics localization, the images resembling spectral variations caused by the presence of strain solitons and topological points. The results are rationalized by a nearly-free-phonon model and electronic calculations that highlight the relevance of solitons and topological points, particularly pronounced for structures with small twist angles. We anticipate our discovery to play a role in understanding Jahn-Teller effects and electronic Cooper pairing, among many other important phonon-related effects, and it may be useful for characterizing devices in the most prominent platform for the field of twistronics.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Local photodoping in monolayer MoS2

Inducing electrostatic doping in 2D materials by laser exposure (photodoping effect) is an exciting route to tune optoelectronic phenomena. However, there is a lack of investigation concerning in what respect the action of photodoping in optoelectronic devices is local. Here, we employ scanning photocurrent microscopy (SPCM) techniques to investigate how a permanent photodoping modulates the photocurrent generation in MoS2 transistors locally. We claim that the photodoping fills the electronic states in MoS2 conduction band, preventing the photon-absorption and the photocurrent generation by the MoS2 sheet. Moreover, by comparing the persistent photocurrent (PPC) generation of MoS2 on top of different substrates, we elucidate that the interface between the material used for the gate and the insulator (gate-insulator interface) is essential for the photodoping generation. Our work gives a step forward to the understanding of the photodoping effect in MoS2 transistors and the implementation of such an effect in integrated devices.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Probing the Electronic Properties of Monolayer MoS$_2$ via Interaction with Molecular Hydrogen

This work presents a detailed experimental investigation of the interaction between molecular hydrogen (H$_2$) and monolayer MoS$_2$ field effect transistors (MoS$_2$ FET), aiming for sensing application. The MoS$_2$ FET exhibits a response to H$_2$ that covers a broad range of concentration (0.1 - 90%) at a relatively low operating temperature range (300-473 K). Most important, H$_2$ sensors based on MoS$_2$ FETs show desirable properties such as full reversibility and absence of catalytic metal dopants (Pt or Pd). The experimental results indicate that the conductivity of MoS$_2$ monotonically increases as a function of the H$_2$ concentration due to a reversible charge transferring process. It is proposed that such process involves dissociative H$_2$ adsorption driven by interaction with sulfur vacancies in the MoS$_2$ surface (VS). This description is in agreement with related density functional theory studies about H$_2$ adsorption on MoS$_2$. Finally, measurements on partially defect-passivated MoS$_2$ FETs using atomic layer deposited aluminum oxide consist of an experimental indication that the VS plays an important role in the H$_2$ interaction with the MoS$_2$. These findings provide insights for futures applications in catalytic process between monolayer MoS$_2$ and H$_2$ and also introduce MoS$_2$ FETs as promising H$_2$ sensors.

0 citations0 reviewsNo code linkedOpen access
preprint2017arXiv

Anomalous Non-linear Optical Response Of Graphene Near Phonon Resonances

In this work we probe the third-order non-linear optical property of graphene, hexagonal boron nitride and their heterostructure by the use of coherent anti-Stokes Raman Spectroscopy. When the energy difference of the two input fields match the phonon energy, the anti-Stokes emission intensity is enhanced in h-BN, as usually expected while for graphene a anomalous decrease is observed. This behaviour can be understood in terms of q coupling between the electronic continuum and a discrete phonon state. We have also measured a graphene/h-BN heterostructure and demonstrate that the anomalous effect in graphene dominates the heterostructure optical response.

0 citations0 reviewsNo code linkedOpen access