Researcher profile

Lazaro A. Padilha

Lazaro A. Padilha contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2020arXiv

Partially-Bright Triplet Excitons in Perovskite Nanocrystals

Advances in opto-electronics require the development of materials with novel and engineered characteristics. A class of materials that has garnered tremendous interest is metal-halide perovskites, stimulated by meteoric increases in photovoltaic efficiencies of perovskite solar cells. In addition, recent advances have applied perovskite nanocrystals (NCs) in light-emitting devices. It was discovered recently that, for cesium lead-halide perovskite NCs, their unusually efficient light-emission may be due to a unique excitonic fine-structure composed of three bright triplet states that minimally interact with a proximal dark singlet state. To study this fine-structure without isolating single NCs, we use multi-dimensional coherent spectroscopy at cryogenic temperatures to reveal coherences involving triplet states of a CsPbI$_3$ NC ensemble. Picosecond timescale dephasing times are measured for both triplet and inter-triplet coherences, from which we infer a unique exciton fine-structure level-ordering comprised of a dark state energetically positioned within the bright triplet manifold.

preprint2020arXiv

Three-Photon Absorption Spectra and Bandgap Scaling in Direct-Gap Semiconductors

This paper presents three-photon absorption (3PA) measurement results for nine direct-gap semiconductors, including full 3PA spectra for ZnSe, ZnS, and GaAs. These results, along with our theory of 3PA using an 8-band Kane model (4 bands with double spin degeneracy), help to explain the significant disagreements between experiments and theory in the literature to date. 3PA in the 8-band model exhibits quantum interference between the various possible pathways that is not observed in previous 2-band theories. We present measurements of degenerate 3PA coefficients in InSb, GaAs, CdTe, CdSe, ZnTe, CdS, ZnSe, ZnO, and ZnS. We examine bandgap, Eg, scaling using 2-band tunneling and perturbation theories that show agreement with the predicted Eg^-7 dependence; however, For those semiconductors for which we measured full 3PA spectra, we observe significant discrepancies with both 2-band theories. On the other hand, our 8-band model shows excellent agreement with the spectral data. We then use our 8-band theory to predict the 3PA spectra for 15 different semiconductors in their zincblende form. These results allow prediction and interpretation of the 3PA coefficients for various narrow to wide bandgap semiconductors.