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Laurens D. A. Siebbeles

Laurens D. A. Siebbeles contributes to research discovery and scholarly infrastructure.

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Published work

5 published item(s)

preprint2020arXiv

Biexcitons in Highly Excited CdSe Nanoplatelets

We present the phase diagram of free charges (electrons and holes), excitons, and biexcitons in highly excited CdSe nanoplatelets that predicts a crossover to a biexciton-dominated region at easily attainable low temperatures or high photoexcitation densities. Our findings extend previous work describing only free charges and excitons by introducing biexcitons into the equation of state, while keeping the exciton and biexciton binding energies constant in view of the relatively low density of free charges in this material. Our predictions are experimentally testable in the near future and offer the prospect of creating a quantum degenerate, and possibly even superfluid, biexciton gas. Furthermore, we also provide simple expressions giving analytical insight into the regimes of photoexcitation densities and temperatures in which excitons and biexcitons dominate the response of the nanoplatelets.

preprint2020arXiv

Change in Tetracene Polymorphism Facilitates Triplet Transfer in Singlet Fission-Sensitized Silicon Solar Cells

Singlet fission in tetracene generates two triplet excitons per absorbed photon. If these triplet excitons can be effectively transferred into silicon (Si) then additional photocurrent can be generated from photons above the bandgap of Si. This could alleviate the thermalization loss and increase the efficiency of conventional Si solar cells. Here we show that a change in the polymorphism of tetracene deposited on Si due to air exposure, facilitates triplet transfer from tetracene into Si. Magnetic field-dependent photocurrent measurements confirm that triplet excitons contribute to the photocurrent. The decay of tetracene delayed photoluminescence was used to determine a triplet transfer time of 215 ns and a maximum yield of triplet transfer into Si of ~50 %. Our study suggests that control over the morphology of tetracene during deposition will be of great importance to boost the triplet transfer yield further.

preprint2020arXiv

Effects of Two-Dimensional Material Thickness and Surrounding Dielectric Medium on Coulomb Interactions and Excitons

We examine the impact of quantum confinement on the interaction potential between two charges in two-dimensional semiconductor nanosheets in solution. The resulting effective potential depends on two length scales, namely the thickness $d$ and an emergent length scale $d^* \equiv εd / ε_{\text{sol}}$, where $ε$ is the permittivity of the nanosheet and $ε_{\text{sol}}$ is the permittivity of the solvent. In particular, quantum confinement, and not electrostatics, is responsible for the logarithmic behavior of the effective potential for separations smaller than $d$, instead of the one-over-distance bulk Coulomb interaction. Finally, we corroborate that the exciton binding energy also depends on the two-dimensional exciton Bohr radius $a_0$ in addition to the length scales $d$ and $d^*$ and analyze the consequences of this dependence.

preprint2020arXiv

Emergence of New Materials for Exploiting Highly Efficient Carrier Multiplication in Photovoltaics

In conventional solar cell semiconductor materials (predominantly Si) photons with energy higher than the band gap initially generate hot electrons and holes, which subsequently cool down to the band edge by phonon emission. Due to the latter process, the energy of the charge carriers in excess of the band gap is lost as heat and does not contribute to the conversion of solar to electrical power. If the excess energy is more than the band gap it can in principle be utilized through a process known as carrier multiplication (CM) in which a single absorbed photon generates two (or more) pairs of electrons and holes. Thus, through CM the photon energy above twice the band gap enhances the photocurrent of a solar cell. In this review, we discuss recent progress in CM research in terms of fundamental understanding, emergence of new materials for efficient CM, and CM based solar cell applications. Based on our current understanding, the CM threshold can get close to the minimal value of twice the band gap in materials where a photon induces an asymmetric electronic transition from a deeper valence band or to a higher conduction band. In addition, the material must have a low exciton binding energy and high charge carrier mobility, so that photoexcitation leads directly to the formation of free charges that can readily be extracted at external electrodes of a photovoltaic device. Percolative networks of coupled PbSe quantum dots, Sn/Pb based halide perovskites, and transition metal dichalcogenides such as MoTe2 fulfill these requirements to a large extent. These findings point towards promising prospects for further development of new materials for highly efficient photovoltaics.

preprint2020arXiv

Probing Excitons in Ultrathin PbS Nanoplatelets with Enhanced Near-Infrared Emission

Strongly quantum-confined 2D colloidal PbS nanoplatelets (NPLs) are highly interesting materials for near-infrared optoelectronic applications. Here, we use ultrafast transient optical absorption spectroscopy to study the characteristics and dynamics of photoexcited excitons in ultrathin PbS NPLs with a cubic (rock-salt) structure. The NPLs are synthesized at near room temperature from lead oleate and thiourea precursors and show an optical absorption onset at 680 nm (1.8 eV) as well as photoluminescence at 720 nm (1.7 eV). By treating PbS NPLs with CdCl2 in a post-synthetic step, their photoluminescence quantum yield is strongly enhanced from 1.4 % to 19.4 %. The surface treatment leads to an increased lead to sulfur ratio in the structures and associated reduced non-radiative recombination. Exciton-phonon interactions in pristine and CdCl2 treated PbS NPLs at frequencies of 1.8 and 2.2 THz are apparent from coherent oscillations in the measured transient absorption spectra. This study is an important step forward in unraveling and controlling the optical properties of IV-VI semiconductor NPLs.