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Laura B. Steren

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cond-mat.mtrl-sci

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preprint2026arXiv

Strain-Induced Enhancement of Spin Pumping in Pt/YIG Bilayers

Enhancing spin-to-charge (S $\rightarrow$ C) conversion efficiency remains a key challenge in spintronic materials research. In this work we investigate the effect of substrate-induced strains onto the S $\rightarrow$ C efficiency. On one hand, we analyze strains-induced magnetic anisotropies in yttrium iron garnet (Y $_3$ Fe $_5$ O $_{12}$ , YIG) by comparing the magnetic and structural properties of YIG films grown on Gd $_3$ Ga $_5$ O $_{12}$ (GGG) and (CaGd) $_3$ (MgZrGa) $_5$ O $_{12}$ (SGGG) substrates. Differences in lattice mismatch - YIG//GGG ( $η= -0.06 \%$ ) and YIG//SGGG ( $η= -0.83 \%$ ) - lead to out-of-plane tensile strains in the first case and unexpected compressive strain in the latter. On the other hand, we study the spin injection efficiency on Pt/YIG bilayers evaluated by the Inverse Spin Hall Effect (ISHE). We find that the resulting perpendicular magnetic anisotropy in YIG//SGGG, while not dominant over shape anisotropy, correlates with enhanced ISHE signals as observed in Spin Pumping Ferromagnetic Resonance (SP-FMR) and Spin Seebeck effect (SSE) experiments. Strain engineering proves effective in enhancing spin-to-charge conversion, providing insight into the design of efficient spintronic devices.

preprint2020arXiv

Nanoscale structural characterization of manganite thin films integrated to silicon correlated with their magnetic and electric properties

A detailed nanoscale structural characterization was performed on high-quality La0.66Sr0.33MnO3 (LSMO) thin films of different thicknesses and deposited by pulsed laser deposition onto buffered Si (100) substrates. A multilayered structure built of Y0.13Zr0.87O2 (YSZ) and CeO2 layers was used as buffer in order to optimize the manganite films growth. The stacking of the different layers, their morpholohy, composition and strains were analysed using different experimental techniques. In-situ characterization of the films, performed with reflection high-energy electron diffraction, revealed their epitaxial growth and smooth surfaces. High-resolution transmission electron microscopy (HR-TEM) images showed sharp interfaces between the constituents lattices and combined with energy-dispersive X-ray analysis allowed us to determine that there was no ion interdifussion across them. The Fourier-Fast-Transform of the HR-TEM images was used to resolve the epitaxy relationship between the layers, resulting in [100] LSMO (001) // [110] CeO2 (001) // [110] YSZ (001) // [110] Si (001). The LSMO thin films were found to be ferromagnetic and metallic at low temperature regardless their thickness. The effect of strains and defects was only detected in films thinner than 15 nm and put in evidence by X-ray diffraction patterns and correlated with magnetic and electrical parameters.

preprint2009arXiv

Anisotropic Magnetoresistance in Manganites: Model and Experiment

We present measurements of anisotropic magnetoresistance of La_{0.75}Sr_{0.25}MnO_3 films deposited on (001) SrTiO_3 substrates, and develop a model to describe the low temperature AMR in manganites. We measure an AMR of the order of 10^{-3} for the current I parallel to the [100] axis of the crystal and vanishing AMR for I//[110], in agreement with the model predictions.

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