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Source author record

Lan Qing

Lan Qing appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.other

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Published work

6 published item(s)

preprint2015arXiv

Spin relaxation via exchange with donor impurity-bound electrons

At low temperatures, electrons in semiconductors are bound to shallow donor impurity ions, neutralizing their charge in equilibrium. Inelastic scattering of other externally-injected conduction electrons accelerated by electric fields can excite transitions within the manifold of these localized states. Promotion of the bound electron into highly spin-orbit-mixed excited states drives a strong spin relaxation of the conduction electrons via exchange interactions, reminiscent of the Bir-Aronov-Pikus process where exchange occurs with valence band hole states. Through low-temperature experiments with silicon spin transport devices and complementary theory, we reveal the consequences of this previously unknown spin depolarization mechanism both below and above the impact ionization threshold.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Exchange-driven magnetoresistance in silicon facilitated by electrical spin injection

We use electrical spin injection to probe exchange interactions in phosphorus doped silicon (Si:P). The detection is enabled by a magnetoresistance effect that demonstrates the efficiency of exchange in imprinting spin information from the magnetic lead onto the localized moments in the Si:P region. A unique Lorentzian-shaped signal existing only at low temperatures ($\lesssim 25 K$) is observed experimentally and analyzed theoretically in electrical Hanle effect measurement. It stems from spin-dependent scattering of electrons by neutral impurities in Si:P. The shape of this signal is not directly related to spin relaxation but to exchange interaction between spin-polarized electrons that are localized on adjacent impurities.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Impurity-assisted tunneling magnetoresistance under weak magnetic field

Injection of spins into semiconductors is essential for the integration of the spin functionality into conventional electronics. Insulating layers are often inserted between ferromagnetic metals and semiconductors for obtaining an efficient spin injection, and it is therefore crucial to distinguish between signatures of electrical spin injection and impurity-driven effects in the tunnel barrier. Here we demonstrate an impurity-assisted tunneling magnetoresistance effect in nonmagnetic-insulator-nonmagnetic and ferromagnetic-insulator-nonmagnetic tunnel barriers. In both cases, the effect reflects on/off switching of the tunneling current through impurity channels by the external magnetic field. The reported effect, which is universal for any impurity-assisted tunneling process, finally clarifies the controversy of a widely used technique that employs the same ferromagnetic electrode to inject and detect spin accumulation.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Anisotropy-driven spin relaxation in germanium

A unique spin depolarization mechanism, induced by the presence of g-factor anisotropy and intervalley scattering, is revealed by spin transport measurements on long-distance germanium devices in a longitudinal magnetic field. The confluence of electron-phonon scattering (leading to Elliott-Yafet spin flips) and this previously unobserved physics enables the extraction of spin lifetime solely from spin-valve measurements, without spin precession, and in a regime of substantial electric-field-generated carrier heating. We find spin lifetimes in Ge up to several hundreds of ns at low temperature, far beyond any other available experimental results.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Controlling the spin orientation of photoexcited electrons by symmetry breaking

We study reflection of optically spin-oriented hot electrons as a means to probe the semiconductor crystal symmetry and its intimate relation with the spin-orbit coupling. The symmetry breaking by reflection manifests itself by tipping the net-spin vector of the photoexcited electrons out of the light propagation direction. The tipping angle and the pointing direction of the net-spin vector are set by the crystal-induced spin precession, momentum alignment and spin-momentum correlation of the initial photoexcited electron population. We examine non-magnetic semiconductor heterostructures and semiconductor/ferromagnet systems and show the unique signatures of these effects.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Field-induced negative differential spin lifetime in silicon

We show that the electric field-induced thermal asymmetry between the electron and lattice systems in pure silicon substantially impacts the identity of the dominant spin relaxation mechanism. Comparison of empirical results from long-distance spin transport devices with detailed Monte-Carlo simulations confirms a strong spin depolarization beyond what is expected from the standard Elliott-Yafet theory already at low temperatures. The enhanced spin-flip mechanism is attributed to phonon emission processes during which electrons are scattered between conduction band valleys that reside on different crystal axes. This leads to anomalous behavior, where (beyond a critical field) reduction of the transit time between spin-injector and spin-detector is accompanied by a counterintuitive reduction in spin polarization and an apparent negative spin lifetime.

0 citations0 reviewsNo code linkedOpen access