Source author record

Ian Appelbaum

Ian Appelbaum appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

20works
4topics
4close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

20 published item(s)

preprint2016arXiv

Electrons, holes, and spin in the IV-VI monolayer 'four-six-enes'

Bandedge states in the indirect-gap group-IV metal monochalcogenide monolayers ('four-six-enes' such as SnS, GeTe, etc.) inherit the properties of nearby reciprocal space points of high symmetry at the Brillouin zone edge. We employ group theory and the method of invariants to capture these essential symmetries in effective Hamiltonians including spin-orbit coupling, and use perturbation theory to shed light on the nature of the bandedge states. In particular, we show how the structure of derived wavefunctions leads to specific dominant momentum and spin scattering mechanisms for both valence holes and conduction electrons, we analyze the direct optical transitions across the bandgap, and expose the interactions responsible for subtle features of the local dispersion relations.

preprint2016arXiv

Interpreting current-induced spin polarization in topological insulator surface states

Several recent experiments on three-dimensional topological insulators claim to observe a large charge current-induced non-equilibrium ensemble spin polarization of electrons in the helical surface state. We present a comprehensive criticism of such claims, using both theory and experiment: First, we clarify the interpretation of quantities extracted from these measurements by deriving standard expressions from a Boltzmann transport equation approach in the relaxation-time approximation at zero and finite temperature to emphasize our assertion that, despite high in-plane spin projection, obtainable current-induced ensemble spin polarization is minuscule. Second, we use a simple experiment to demonstrate that magnetic field-dependent open-circuit voltage hysteresis (identical to those attributed to current-induced spin polarization in topological insulator surface states) can be generated in analogous devices where current is driven through thin films of a topologically-trivial metal. This result *ipso facto* discredits the naive interpretation of previous experiments with TIs, which were used to claim observation of helicity, i.e. spin-momentum locking in the topologically-protected surface state.

preprint2016arXiv

Spin polarization control in a 2-dimensional semiconductor

Long carrier spin lifetimes are a double-edged sword for the prospect of constructing "spintronic" logic devices: Preservation of the logic variable within the transport channel or interconnect is essential to successful completion of the logic operation, but any spins remaining past this event will pollute the environment for subsequent clock cycles. Electric fields can be used to manipulate these spins on a fast timescale by careful interplay of spin-orbit effects, but efficient controlled depolarization can only be completely achieved with amenable materials properties. Taking III-VI monochalcogenide monolayers as an example 2D semiconductor, we use symmetry analysis, perturbation theory, and ensemble calculation to show how this longstanding problem can be solved by suitable manipulation of conduction electrons.

preprint2015arXiv

Spin relaxation via exchange with donor impurity-bound electrons

At low temperatures, electrons in semiconductors are bound to shallow donor impurity ions, neutralizing their charge in equilibrium. Inelastic scattering of other externally-injected conduction electrons accelerated by electric fields can excite transitions within the manifold of these localized states. Promotion of the bound electron into highly spin-orbit-mixed excited states drives a strong spin relaxation of the conduction electrons via exchange interactions, reminiscent of the Bir-Aronov-Pikus process where exchange occurs with valence band hole states. Through low-temperature experiments with silicon spin transport devices and complementary theory, we reveal the consequences of this previously unknown spin depolarization mechanism both below and above the impact ionization threshold.

preprint2015arXiv

Symmetry, distorted bandstructure, and spin-orbit coupling of (group-III) metal-monochalcogenide monolayers

The electronic structure of (group-III) metal-monochalcogenide monolayers exhibits many unusual features. Some, such as the unusually distorted upper valence band dispersion we describe as a 'caldera', are primarily the result of purely orbital interactions. Others, including spin splitting and wavefunction spin-mixing, are directly driven by spin-orbit coupling. We employ elementary group theory to explain the origins of these properties, and use a tight-binding model to calculate the phenomena enabled by them, such as band-edge carrier effective g-factors, optical absorption spectrum, conduction electron spin orientation, and a relaxation-induced upper valence band population inversion and spin polarization mechanism.

preprint2014arXiv

Detecting Majoranas in 1D wires by charge sensing

The electron number-parity of the ground state of a semiconductor narowire proximity-coupled to a bulk superconductor can alternate between the quantised values $\pm 1$ if parameters such as the wire length $L$, the chemical potential $μ$ or the magnetic field $B$ are varied inside the topological superconductor phase. % The parity jumps, which may be interpreted as changes in the occupancy of the fermion state formed from the pair of Majorana modes at opposite ends of the wire, are accompanied by jumps $δN$ in the charge of the nanowire, whose values decrease exponentially with the wire length. % We study theoretically the dependence of $δN$ on system parameters, and compare the locations in the $μ$-$B$ plane of parity jumps when the nanowire is or is not proximity-coupled to a bulk superconductor. % We show that, despite the fact that the wave functions of the Majorana modes are localised near the two ends of the wire, the charge-density jumps have spatial distributions that are essentially uniform along the wire length, being proportional to the product of the two Majorana wave functions. % We explain how charge measurements, say by an external single-electron transistor, could reveal these effects. % Whereas existing experimental methods require direct contact to the wire for tunneling measurements, charge sensing avoids this issue and provides an orthogonal measurement to confirm recent experimental developments. % Furthermore, by comparing density of states measurements which show Majorana features at the wire ends with the uniformly-distributed charge measurements, one can rule out alternative explanations for earlier results. % We shed light on a new parameter regime for these wire-superconductor hybrid systems, and propose a related experiment to measure spin density.

preprint2014arXiv

Electrons and holes in phosphorene

We present a symmetry analysis of electronic bandstructure including spin-orbit interaction close to the insulating gap edge in monolayer black phosphorus ('phosphorene'). Expressions for energy dispersion relation and spin-dependent eigenstates for electrons and holes are found via simplification of a perturbative expansion in wavevector $k$ away from the zone center using elementary group theory. Importantly, we expose the underlying symmetries giving rise to substantial anisotropy in optical absorption, charge and spin transport properties, and reveal the mechanism responsible for valence band distortion and possible lack of a true direct gap.

preprint2014arXiv

Inelastic electron tunneling spectroscopy of local "spin accumulation" devices

We investigate the origin of purported "spin accumulation" signals observed in local "three-terminal" (3T) measurements of ferromagnet/insulator/n-Si tunnel junctions using inelastic electron tunneling spectroscopy (IETS). Voltage bias and magnetic field dependences of the IET spectra were found to account for the dominant contribution to 3T magnetoresistance signals, thus indicating that it arises from inelastic tunneling through impurities and defects at junction interfaces and within the barrier, rather than from spin accumulation due to pure elastic tunneling into bulk Si as has been previously assumed.

preprint2014arXiv

Self-consistent model of spin accumulation magnetoresistance in ferromagnet-insulator-semiconductor tunnel junctions

Spin accumulation in a paramagnetic semiconductor due to voltage-biased current tunneling from a polarized ferromagnet is experimentally manifest as a small additional spin-dependent resistance. We describe a rigorous model incorporating the necessary self-consistency between electrochemical potential splitting, spin-dependent injection current, and applied voltage that can be used to simulate this so-called "3T" signal as a function of temperature, doping, ferromagnet bulk spin polarization, tunnel barrier features and conduction nonlinearity, and junction voltage bias.

preprint2013arXiv

Anisotropy-driven spin relaxation in germanium

A unique spin depolarization mechanism, induced by the presence of g-factor anisotropy and intervalley scattering, is revealed by spin transport measurements on long-distance germanium devices in a longitudinal magnetic field. The confluence of electron-phonon scattering (leading to Elliott-Yafet spin flips) and this previously unobserved physics enables the extraction of spin lifetime solely from spin-valve measurements, without spin precession, and in a regime of substantial electric-field-generated carrier heating. We find spin lifetimes in Ge up to several hundreds of ns at low temperature, far beyond any other available experimental results.

preprint2013arXiv

Tunnel conductance spectroscopy via harmonic generation in a hybrid capacitor device

We address the measurement of density of states within and beyond the superconducting gap in tunnel-coupled finite-size nanostructures using a capacitive method. Third-harmonic generation is used to yield the full differential conductance spectrum without destruction of the low dimensionality otherwise induced by intimate ohmic coupling to an electrode. The method is particularly relevant to attempts to discern the presence of the fragile Majorana quasiparticle at the end of spin-orbit-coupled nanowires in appropriate magnetic field conditions by their signature mid-gap density of states.

preprint2011arXiv

Field-induced negative differential spin lifetime in silicon

We show that the electric field-induced thermal asymmetry between the electron and lattice systems in pure silicon substantially impacts the identity of the dominant spin relaxation mechanism. Comparison of empirical results from long-distance spin transport devices with detailed Monte-Carlo simulations confirms a strong spin depolarization beyond what is expected from the standard Elliott-Yafet theory already at low temperatures. The enhanced spin-flip mechanism is attributed to phonon emission processes during which electrons are scattered between conduction band valleys that reside on different crystal axes. This leads to anomalous behavior, where (beyond a critical field) reduction of the transit time between spin-injector and spin-detector is accompanied by a counterintuitive reduction in spin polarization and an apparent negative spin lifetime.

preprint2011arXiv

Modeling spin transport in electrostatically-gated lateral-channel silicon devices: role of interfacial spin relaxation

Using a two-dimensional finite-differences scheme to model spin transport in silicon devices with lateral geometry, we simulate the effects of spin relaxation at interfacial boundaries, i.e. the exposed top surface and at an electrostatically-controlled backgate with SiO_2 dielectric. These gate-voltage-dependent simulations are compared to previous experimental results and show that strong spin relaxation due to extrinsic effects yield an Si/SiO_2 interfacial spin lifetime of ~ 1ns, orders of magnitude lower than lifetimes in the bulk Si, whereas relaxation at the top surface plays no substantial role. Hall effect measurements on ballistically injected electrons gated in the transport channel yield the carrier mobility directly and suggest that this reduction in spin lifetime is only partially due to enhanced interfacial momentum scattering which induces random spin flips as in the Elliott effect. Therefore, other extrinsic mechanisms such as those caused by paramagnetic defects should also be considered in order to explain the dramatic enhancement in spin relaxation at the gate interface over bulk values.

preprint2011arXiv

Spin-Polarized Transient Electron Trapping in Phosphorus-doped Silicon

Experimental evidence of electron spin precession during travel through the phosphorus-doped Si channel of an all-electrical device simultaneously indicates two distinct processes: (i) short timescales (~50ps) due to purely conduction-band transport from injector to detector, and (ii) long timescales (~1ns) originating from delays associated with capture/re-emission in shallow impurity traps. The origin of this phenomenon, examined via temperature, voltage, and electron density dependence measurements, is established by means of comparison to a numerical model and is shown to reveal the participation of metastable excited states in the phosphorus impurity spectrum. This work therefore demonstrates the potential to make the study of macroscopic spin transport relevant to the quantum regime of individual spin interactions with impurities as envisioned for quantum information applications.

preprint2010arXiv

Proposal for a Topological Plasmon Spin Rectifier

We propose a device in which the spin-polarized AC plasmon mode in the surface state of a topological insulator nanostructure induces a static spin accumulation in a resonant, normal metal structure coupled to it. Using a finite-difference time-domain model, we simulate this spin-pump mechanism with drift, diffusion, relaxation, and precession in a magnetic field. This optically-driven system can serve as a DC "spin battery" for spintronic devices.

preprint2010arXiv

Reverse Schottky-Asymmetry Spin Current Detectors

By reversing the Schottky barrier-height asymmetry in hot-electron semiconductor-metal-semiconductor ballistic spin filtering spin detectors, we have achieved: 1. Demonstration of >50% spin polarization in silicon, resulting from elimination of the ferromagnet/silicon interface on the transport channel detector contact, and 2. Evidence of spin transport at temperatures as high as 260K, enabled by an increase of detector Schottky barrier height.

preprint2010arXiv

The Larmor clock and anomalous spin dephasing in silicon

Drift-diffusion theory - which fully describes charge transport in semiconductors - is also universally used to model transport of spin-polarized electrons in the presence of longitudinal electric fields. By transforming spin transit time into spin orientation with precession (a technique called the "Larmor clock") in current-sensing vertical-transport intrinsic Si devices, we show that spin diffusion (and concomitant spin dephasing) can be greatly enhanced with respect to charge diffusion, in direct contrast to predictions of spin Coulomb-drag diffusion suppression.

preprint2009arXiv

Modeling spin transport with current-sensing spin detectors

By incorporating the proper boundary conditions, we analytically derive the impulse response (or "Green's function") of a current-sensing spin detector. We also compare this result to a Monte-Carlo simulation (which automatically takes the proper boundary condition into account) and an empirical spin transit time distribution obtained from experimental spin precession measurements. In the strong drift-dominated transport regime, this spin current impulse response can be approximated by multiplying the spin density impulse response by the average drift velocity. However, in weak drift fields, large modeling errors up to a factor of 3 in most-probable spin transit time can be incurred unless the full spin current Green's function is used.

preprint2009arXiv

Spin polarized electron transport near the Si/SiO2 interface

Using long-distance lateral devices, spin transport near the interface of Si and its native oxide (SiO2) is studied by spin-valve measurements in an in-plane magnetic field and spin precession measurements in a perpendicular magnetic field at 60K. As electrons are attracted to the interface by an electrostatic gate, we observe shorter average spin transit times and an increase in spin coherence, despite a reduction in total spin polarization. This behavior, which is in contrast to the expected exponential depolarization seen in bulk transport devices, is explained using a transform method to recover the empirical spin transit-time distribution and a simple two-stage drift-diffusion model. We identify strong interface-induced spin depolarization (reducing the spin lifetime by over two orders of magnitude from its bulk transport value) as the consistent cause of these phenomena.