Researcher profile

L. Vicarelli

L. Vicarelli contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2020arXiv

High frequency mechanical excitation of a silicon nanostring with piezoelectric aluminum nitride layers

A strong trend for quantum based technologies and applications follows the avenue of combining different platforms to exploit their complementary technological and functional advantages. Micro and nano-mechanical devices are particularly suitable for hybrid integration due to the easiness of fabrication at multi-scales and their pervasive coupling with electrons and photons. Here, we report on a nanomechanical technological platform where a silicon chip is combined with an aluminum nitride layer. Exploiting the AlN piezoelectricity, Surface Acoustic Waves are injected in the Si layer where the material has been localy patterned and etched to form a suspended nanostring. Characterizing the nanostring vertical displacement induced by the SAW, we found an external excitation peak efficiency in excess of 500 pm/V at 1 GHz mechanical frequency. Exploiting the long term expertise in silicon photonic and electronic devices as well as the SAW robustness and versatility, our technological platform represents a strong candidate for hybrid quantum systems.

preprint2012arXiv

Graphene field effect transistors as room-temperature Terahertz detectors

The unique optoelectronic properties of graphene [1] make it an ideal platform for a variety of photonic applications [2], including fast photodetectors [3], transparent electrodes [4], optical modulators [5], and ultra-fast lasers [6]. Owing to its high carrier mobility, gapless spectrum, and frequency-independent absorption coefficient, it has been recognized as a very promising element for the development of detectors and modulators operating in the Terahertz (THz) region of the electromagnetic spectrum (wavelengths in the hundreds of micrometers range), which is still severely lacking in terms of solid-state devices. Here we demonstrate efficient THz detectors based on antenna-coupled graphene field-effect transistors (FETs). These exploit the non-linear FET response to the oscillating radiation field at the gate electrode, with contributions of thermoelectric and photoconductive origin. We demonstrate room temperature (RT) operation at 0.3 THz, with noise equivalent power (NEP) levels < 30 nW/Hz^(1/2), showing that our devices are well beyond a proof-of-concept phase and can already be used in a realistic setting, enabling large area, fast imaging of macroscopic samples.