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Researcher profile

L. V. Gasparov

L. V. Gasparov contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-matcond-mat.mtrl-scicond-mat.str-el

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Published work

2 published item(s)

preprint2009arXiv

Magnetite: Raman study of the high-pressure and low-temperature effects

We report the results of a low-temperature (300K-15K) high-pressure (up to 22GPa) Raman study of the Verwey transition in magnetite (Fe3O4). We use additional Raman modes observed below the Verwey transition to determine how the transition temperature changes with the quasihydrostatic pressure. Increase of the pressure results in the linear decrease of the Verwey transition temperature, with no discontinuity. The corresponding pressure coefficient dTV/dP is found to be ~ -5.2 K/GPa. Such a decrease is substantially larger than the one predicted by the mean-field Coulomb interaction model of the transition.

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preprint2002arXiv

Phonon anomaly at the charge ordering transition in 1T-TaS2

The infrared reflectance of the transition metal chalcogenide 1T-TaS2 has been measured at temperatures from 30K to 360K over 30-45,000cm^-1 (4meV-5.5eV). The optical conductivity was obtained by Kramers-Kronig analysis. At 360K only modest traces of the phonon lines are noticeable. The phonon modes are followed by a pseudogap-like increase of the optical conductivity, with direct optical transitions observed at frequencies above 1eV. As the temperature decreases, the low frequency conductivity also decreases, phonon modes become more pronounced and pseudogap develops into a gap at 800cm^-1 (100meV). We observe an anomalous frequency dependence of the 208cm^-1 infrared-active phonon mode. This mode demonstrates softening as the temperature decreases below the 180K metal-to-insulator transition. The same mode demonstrates strong hysteresis of the frequency and linewidth changes, similar in its temperature behavior to the hysteresis in the dc-resistivity. We discuss a possible relation of the observed softening of the mode to the structural changes associated with the metal-to-insulator transition.

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