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Researcher profile

L. V. C. Assali

L. V. C. Assali contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sciphysics.comp-ph

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Published work

7 published item(s)

preprint2013arXiv

3d transition metal impurities in diamond: electronic properties and chemical trends

First principles calculations have been used to investigate the trends on the properties of isolated 3d transition metal impurities (from Sc to Cu) in diamond. Those impurities have small formation energies in the substitutional or double semi-vacancy sites, and large energies in the interstitial one. Going from Sc to Cu, the 3d-related energy levels in the bandgap move from the top of the bandgap toward the valence band in all three sites. Trends in electronic properties and transition energies of the impurities, in the substitutional or interstitial sites, are well described by a simple microscopic model considering the electronic occupation of the 3d-related levels. On the other hand, for the impurities in the double semi-vacancy site, there is a weak interaction between the divacancy- and the 3d-related orbitals, resulting in in vacancy- and 3d-related levels in the materials bandgap.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Cobalt-related impurity centers in diamond: electronic properties and hyperfine parameters

Cobalt-related impurity centers in diamond have been studied using first principles calculations. We computed the symmetry, formation and transition energies, and hyperfine parameters of cobalt impurities in isolated configurations and in complexes involving vacancies and nitrogen atoms. We found that the Co impurity in a divacant site is energetically favorable and segregates nitrogen atoms in its neighborhood. Our results were discussed in the context of the recently observed Co-related electrically active centers in synthetic diamond.

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preprint2013arXiv

Lanthanide impurities in wide bandgap semiconductors: a possible roadmap for spintronic devices

The electronic properties of lanthanide (from Eu to Tm) impurities in wurtzite gallium nitride and zinc oxide were investigated by first principles calculations, using an all electron methodology plus a Hubbard potential correction. The results indicated that the 4f-related energy levels remain outside the bandgap in both materials, in good agreement with a recent phenomenological model, based on experimental data. Additionally, zinc oxide doped with lanthanide impurities became an n-type material, showing a coupling between the 4f-related spin polarized states and the carriers. This coupling may generate spin polarized currents, which could lead to applications in spintronic devices.

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preprint2013arXiv

Spin states of iron impurities in magnesium oxide under pressure: A possible intermediate state

Ferropericlase (Mg,Fe)O is a major lower mantle mineral, and studying its properties is a fundamental step toward understanding the Earth's interior. Here, we performed a first-principles investigation on the properties of iron as an isolated impurity in magnesium oxide, which is the condition of ferropericlase under which iron-iron interactions could be neglected. The calculations were carried using the all-electron full-potential linearized augmented plane wave method within the density functional theory in the generalized gradient approximation plus the on-site Hubbard correction. We present the electronic and magnetic properties, electric and magnetic hyperfine splitting of this impurity in high and low spin states for several charge states at zero pressure, which were then extended to high pressures. For the impurity in the neutral charge state, our results indicated that there is a metastable intermediate spin state (S=1), in addition to the high (S=2) and low (S=0) spin states. Those results were discussed in the context of an intermediate spin state, experimentally identified in ferrosilicate perovskite.

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preprint2013arXiv

Stability and plasticity of silicon nanowires: the role of wire perimeter

We investigated the properties of stability and plasticity of silicon nanowires using molecular dynamics simulations. We considered nanowires with <100>, <110> and <112> growth directions with several diameters and surface facet configurations. We found that the wire perimeter, and not the wire diameter, is the meaningful dimensional parameter. As a result, the surface facets play a central role on the nanowire energy, that follows a universal scaling law. Additionally, we have computed the response of a silicon nanowire to external load. The results were compared to available experimental and ab initio data.

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preprint2012arXiv

Crystal engineering using functionalized adamantane

We performed a first principles investigation on the structural, electronic, and optical properties of crystals made of chemically functionalized adamantane molecules. Several molecular building blocks, formed by boron and nitrogen substitutional functionalizations, were considered to build zincblende and wurtzite crystals, and the resulting structures presented large bulk moduli and cohesive energies, wide and direct bandgaps, and low dielectric constants (low-$κ$ materials). Those properties provide stability for such structures up to room temperature, superior to those of typical molecular crystals. This indicates a possible road map for crystal engineering using functionalized diamondoids, with potential applications ranging from space filling between conducting wires in nanodevices to nano-electro-mechanical systems.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Electronic properties and hyperfine fields of nickel-related complexes in diamond

We carried out a first principles investigation on the microscopic properties of nickel-related defect centers in diamond. Several configurations, involving substitutional and interstitial nickel impurities, have been considered either in isolated configurations or forming complexes with other defects, such as vacancies and boron and nitrogen dopants. The results, in terms of spin, symmetry, and hyperfine fields, were compared with the available experimental data on electrically active centers in synthetic diamond. Several microscopic models, previously proposed to explain those data, have been confirmed by this investigation, while some models could be discarded. We also provided new insights on the microscopic structure of several of those centers.

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