Researcher profile

J. F. Justo

J. F. Justo contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate

Trust snapshot

Quick read

Trust 21 - EmergingVerification L1Unclaimed author
8works
0followers
2topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

8 published item(s)

preprint2013arXiv

3d transition metal impurities in diamond: electronic properties and chemical trends

First principles calculations have been used to investigate the trends on the properties of isolated 3d transition metal impurities (from Sc to Cu) in diamond. Those impurities have small formation energies in the substitutional or double semi-vacancy sites, and large energies in the interstitial one. Going from Sc to Cu, the 3d-related energy levels in the bandgap move from the top of the bandgap toward the valence band in all three sites. Trends in electronic properties and transition energies of the impurities, in the substitutional or interstitial sites, are well described by a simple microscopic model considering the electronic occupation of the 3d-related levels. On the other hand, for the impurities in the double semi-vacancy site, there is a weak interaction between the divacancy- and the 3d-related orbitals, resulting in in vacancy- and 3d-related levels in the materials bandgap.

preprint2013arXiv

Anomalous compressibility of ferropericlase throughout the iron spin crossover

The thermoelastic properties of ferropericlase Mg1-xFexO (x = 0.1875) throughout the iron high-to-low spin crossover have been investigated by first principles at Earth's lower mantle conditions. This crossover has important consequences for elasticity such as an anomalous bulk modulus (KS) reduction. At room temperature the anomaly is somewhat sharp in pressure but broadens with increasing temperature. Along a typical geotherm it occurs across most of the lower mantle with a more significant KS reduction around 1400-1600 km depth. This anomaly might also cause a reduction in the effective activation energy for viscous creep and lead to a viscosity minimum in the mid-lower mantle, in apparent agreement with results from inversion of data related with mantle convection and postglacial rebound.

preprint2013arXiv

Cobalt-related impurity centers in diamond: electronic properties and hyperfine parameters

Cobalt-related impurity centers in diamond have been studied using first principles calculations. We computed the symmetry, formation and transition energies, and hyperfine parameters of cobalt impurities in isolated configurations and in complexes involving vacancies and nitrogen atoms. We found that the Co impurity in a divacant site is energetically favorable and segregates nitrogen atoms in its neighborhood. Our results were discussed in the context of the recently observed Co-related electrically active centers in synthetic diamond.

preprint2013arXiv

Lanthanide impurities in wide bandgap semiconductors: a possible roadmap for spintronic devices

The electronic properties of lanthanide (from Eu to Tm) impurities in wurtzite gallium nitride and zinc oxide were investigated by first principles calculations, using an all electron methodology plus a Hubbard potential correction. The results indicated that the 4f-related energy levels remain outside the bandgap in both materials, in good agreement with a recent phenomenological model, based on experimental data. Additionally, zinc oxide doped with lanthanide impurities became an n-type material, showing a coupling between the 4f-related spin polarized states and the carriers. This coupling may generate spin polarized currents, which could lead to applications in spintronic devices.

preprint2013arXiv

Spin states of iron impurities in magnesium oxide under pressure: A possible intermediate state

Ferropericlase (Mg,Fe)O is a major lower mantle mineral, and studying its properties is a fundamental step toward understanding the Earth's interior. Here, we performed a first-principles investigation on the properties of iron as an isolated impurity in magnesium oxide, which is the condition of ferropericlase under which iron-iron interactions could be neglected. The calculations were carried using the all-electron full-potential linearized augmented plane wave method within the density functional theory in the generalized gradient approximation plus the on-site Hubbard correction. We present the electronic and magnetic properties, electric and magnetic hyperfine splitting of this impurity in high and low spin states for several charge states at zero pressure, which were then extended to high pressures. For the impurity in the neutral charge state, our results indicated that there is a metastable intermediate spin state (S=1), in addition to the high (S=2) and low (S=0) spin states. Those results were discussed in the context of an intermediate spin state, experimentally identified in ferrosilicate perovskite.

preprint2012arXiv

Crystal engineering using functionalized adamantane

We performed a first principles investigation on the structural, electronic, and optical properties of crystals made of chemically functionalized adamantane molecules. Several molecular building blocks, formed by boron and nitrogen substitutional functionalizations, were considered to build zincblende and wurtzite crystals, and the resulting structures presented large bulk moduli and cohesive energies, wide and direct bandgaps, and low dielectric constants (low-$κ$ materials). Those properties provide stability for such structures up to room temperature, superior to those of typical molecular crystals. This indicates a possible road map for crystal engineering using functionalized diamondoids, with potential applications ranging from space filling between conducting wires in nanodevices to nano-electro-mechanical systems.

preprint2012arXiv

Electronic properties and hyperfine fields of nickel-related complexes in diamond

We carried out a first principles investigation on the microscopic properties of nickel-related defect centers in diamond. Several configurations, involving substitutional and interstitial nickel impurities, have been considered either in isolated configurations or forming complexes with other defects, such as vacancies and boron and nitrogen dopants. The results, in terms of spin, symmetry, and hyperfine fields, were compared with the available experimental data on electrically active centers in synthetic diamond. Several microscopic models, previously proposed to explain those data, have been confirmed by this investigation, while some models could be discarded. We also provided new insights on the microscopic structure of several of those centers.

preprint1997arXiv

Environment Dependent Interatomic Potential for Bulk Silicon

We use recent theoretical advances to develop a new functional form for interatomic forces in bulk silicon. The theoretical results underlying the model include a novel analysis of elastic properties for the diamond and graphitic structures and inversions of ab initio cohesive energy curves. The interaction model includes two-body and three-body terms which depend on the local atomic environment through an effective coordination number. This formulation is able to capture successfully: (i) the energetics and elastic properties of the ground state diamond lattice; (ii) the covalent re-hybridization of undercoordinated atoms; (iii) and a smooth transition to metallic bonding for overcoordinated atoms. Because the essential features of chemical bonding in the bulk are built into the functional form, this model promises to be useful for describing interatomic forces in silicon bulk phases and defects. Although this functional form is remarkably realistic by usual standards, it contains a small number of fitting parameters and requires computational effort comparable to the most efficient existing models. In a companion paper, a complete parameterization of the model is given, and excellent performance for condensed phases and bulk defects is demonstrated.