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L. R. Wilson

L. R. Wilson appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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physics.optics cond-mat.mes-hall quant-ph cond-mat.mtrl-sci physics.app-ph

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preprint2022arXiv

Engineering strong chiral light-matter interactions in a waveguide-coupled nanocavity

Spin-dependent, directional light-matter interactions form the basis of chiral quantum networks. In the solid state, quantum emitters commonly possess circularly polarised optical transitions with spin-dependent handedness. We demonstrate numerically that spin-dependent chiral coupling can be realised by embedding such an emitter in a waveguide-coupled nanocavity, which supports two near-degenerate, orthogonally-polarised cavity modes. The chiral behaviour arises due to direction-dependent interference between the cavity modes upon coupling to two single-mode output waveguides. Notably, an experimentally realistic cavity design simultaneously supports near-unity chiral contrast, efficient ($β> 0.95$) waveguide coupling and enhanced light-matter interaction strength (Purcell factor $F_P > 70$). In combination, these parameters could enable the development of highly coherent spin-photon interfaces, ready for integration into nanophotonic circuits.

preprint2020arXiv

A Semiconductor Topological Photonic Ring Resonator

Unidirectional photonic edge states arise at the interface between two topologically-distinct photonic crystals. Here, we demonstrate a micron-scale GaAs photonic ring resonator, created using a spin Hall-type topological photonic crystal waveguide. Embedded InGaAs quantum dots are used to probe the mode structure of the device. We map the spatial profile of the resonator modes, and demonstrate control of the mode confinement through tuning of the photonic crystal lattice parameters. The intrinsic chirality of the edge states makes them of interest for applications in integrated quantum photonics, and the resonator represents an important building block towards the development of such devices with embedded quantum emitters.

preprint2017arXiv

Electrical control of nonlinear quantum optics in a nano-photonic waveguide

Local control of the generation and interaction of indistinguishable single photons is a key requirement for photonic quantum networks. Waveguide-based architectures, in which embedded quantum emitters act as both highly coherent single photon sources and as nonlinear elements to mediate photon-photon interactions, offer a scalable route to such networks. However, local electrical control of a quantum optical nonlinearity has yet to be demonstrated in a waveguide geometry. Here, we demonstrate local electrical tuning and switching of single photon generation and nonlinear interaction by embedding a quantum dot in a nano-photonic waveguide with enhanced light-matter interaction. A power-dependent transmission extinction as large as 40$\pm$2% and clear, voltage-controlled bunching in the photon statistics of the transmitted light demonstrate the single photon character of the nonlinearity. The deterministic nature of the nonlinearity is particularly attractive for the future realization of photonic gates for scalable nano-photonic waveguide-based quantum information processing.

preprint2016arXiv

Electrically pumped single-defect light emitters in WSe$_2$

Recent developments in fabrication of van der Waals heterostructures enable new type of devices assembled by stacking atomically thin layers of two-dimensional materials. Using this approach, we fabricate light-emitting devices based on a monolayer WSe$_2$, and also comprising boron nitride tunnelling barriers and graphene electrodes, and observe sharp luminescence spectra from individual defects in WSe$_2$ under both optical and electrical excitation. This paves the way towards the realization of electrically-pumped quantum emitters in atomically thin semiconductors. In addition we demonstrate tuning by more than 1 meV of the emission energy of the defect luminescence by applying a vertical electric field. This provides an estimate of the permanent electric dipole created by the corresponding electron-hole pair. The light-emitting devices investigated in our work can be assembled on a variety of substrates enabling a route to integration of electrically pumped single quantum emitters with existing technologies in nano-photonics and optoelectronics.

preprint2014arXiv

Strong exciton-photon coupling in open semiconductor microcavities

We present a method to implement 3-dimensional polariton confinement with in-situ spectral tuning of the cavity mode. Our tunable microcavity is a hybrid system consisting of a bottom semiconductor distributed Bragg reflector (DBR) with a cavity containing quantum wells (QWs) grown on top and a dielectric concave DBR separated by a micrometer sized gap. Nanopositioners allow independent positioning of the two mirrors and the cavity mode energy can be tuned by controlling the distance between them. When close to resonance we observe a characteristic anticrossing between the cavity modes and the QW exciton demonstrating strong coupling. For the smallest radii of curvature concave mirrors of 5.6 $μ$m and 7.5 $μ$m real-space polariton imaging reveals submicron polariton confinement due to the hemispherical cavity geometry.

preprint2012arXiv

Effect of the GaAsP shell on optical properties of self-catalyzed GaAs nanowires grown on silicon

We realize growth of self-catalyzed core-shell GaAs/GaAsP nanowires (NWs) on Si substrates using molecular-beam epitaxy. Transmission electron microscopy (TEM) of single GaAs/GaAsP NWs confirms their high crystal quality and shows domination of the zinc-blende phase. This is further confirmed in optics of single NWs, studied using cw and time-resolved photoluminescence (PL). A detailed comparison with uncapped GaAs NWs emphasizes the effect of the GaAsP capping in suppressing the non-radiative surface states: significant PL enhancement in the core-shell structures exceeding 2000 times at 10K is observed; in uncapped NWs PL is quenched at 60K whereas single core-shell GaAs/GaAsP NWs exhibit bright emission even at room temperature. From analysis of the PL temperature dependence in both types of NW we are able to determine the main carrier escape mechanisms leading to the PL quench.