Researcher profile

L. Pavesi

L. Pavesi contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2020arXiv

Bell inequality violation by entangled single photon states generated from a laser, a LED or a Halogen lamp

In single-particle or intraparticle entanglement, two degrees of freedom of a single particle, e.g., momentum and polarization of a single photon, are entangled. Single-particle entanglement (SPE) provides a source of non classical correlations which can be exploited both in quantum communication protocols and in experimental tests of noncontextuality based on the Kochen-Specker theorem. Furthermore, SPE is robust under decoherence phenomena. Here, we show that single-particle entangled states of single photons can be produced from attenuated sources of light, even classical ones. To experimentally certify the entanglement, we perform a Bell test, observing a violation of the Clauser, Horne, Shimony and Holt (CHSH) inequality. On the one hand, we show that this entanglement can be achieved even in a classical light beam, provided that first-order coherence is maintained between the degrees of freedom involved in the entanglement. On the other hand, we prove that filtered and attenuated light sources provide a flux of independent SPE photons that, from a statistical point of view, are indistinguishable from those generated by a single photon source. This has important consequences, since it demonstrates that cheap, compact, and low power entangled photon sources can be used for a range of quantum technology applications.

preprint2015arXiv

High frequency electro-optic measurement of strained silicon racetrack resonators

The observation of the electro-optic effect in strained silicon waveguides has been considered as a direct manifestation of an induced $χ^{(2)}$ non-linearity in the material. In this work, we perform high frequency measurements on strained silicon racetrack resonators. Strain is controlled by a mechanical deformation of the waveguide. It is shown that any optical modulation vanishes independently of the applied strain when the applied voltage varies much faster than the carrier effective lifetime, and that the DC modulation is also largely independent of the applied strain. This demonstrates that plasma carrier dispersion is responsible for the observed electro-optic effect. After normalizing out free carrier effects, our results set an upper limit of $8\,pm/V$ to the induced high-speed $χ^{(2)}_{eff,zzz}$ tensor element at an applied stress of $-0.5\,GPa$. This upper limit is about one order of magnitude lower than the previously reported values for static electro-optic measurements.