Researcher profile

L. N. Oliveira

L. N. Oliveira contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2020arXiv

Universality and thermoelectric transport properties of quantum dot systems

We discuss the temperature-dependent thermoelectric transport properties of semiconductor nanostructures comprising a quantum dot coupled to quantum wires: the thermal dependence of the electrical conductance, thermal conductance, and thermopower. We explore the universality of the thermoelectric properties in the temperature range associated with the Kondo crossover. In this thermal range, general arguments indicate that any equilibrium property's temperature dependence should be a universal function of the ratio $T^{*}=T/T_{K}$, where $T_{K}$ is the Kondo temperature. Considering the particle-hole symmetric, spin-degenerate Anderson model, the zero-bias electrical conductance has already been shown to map linearly onto a universal conductance through a quantum dot embedded or side-coupled to a quantum wire. Employing rigorous renormalization-group arguments, we calculate universal thermoelectric transport coefficients that allow us to extend this result to the thermopower and the thermal conductance. We present numerical renormalization-group results to illustrate the physics in our findings. Applying the universal thermoelectric coefficients to recent experimental results of the electrical conductance and thermo-voltages versus $V_{gate}$, at different temperatures in the Kondo regime, we calculate all the thermoelectric properties and obtain simple analytical fitting functions that can be used to predict the experimental results of these properties. However, we cannot check all of them, due to the lack of available experimental results over a broad temperature range.

preprint2009arXiv

Universal zero-bias conductance through a quantum wire side-coupled to a quantum dot

A numerical renormalization-group study of the conductance through a quantum wire side-coupled to a quantum dot is reported. The temperature and the dot-energy dependence of the conductance are examined in the light of a recently derived linear mapping between the Kondo-regime temperature-dependent conductance and the universal function describing the conductance for the symmetric Anderson model of a quantum wire with an embedded quantum dot. Two conduction paths, one traversing the wire, the other a bypass through the quantum dot, are identified. A gate potential applied to the quantum wire is shown to control the flow through the bypass. When the potential favors transport through the wire, the conductance in the Kondo regime rises from nearly zero at low temperatures to nearly ballistic at high temperatures. When it favors the dot, the pattern is reversed: the conductance decays from nearly ballistic to nearly zero. When the fluxes through the two paths are comparable, the conductance is nearly temperature-independent in the Kondo regime, and a Fano antiresonance in the fixed-temperature plot of the conductance as a function of the dot energy signals interference. Throughout the Kondo regime and, at low temperatures, even in the mixed-valence regime, the numerical data are in excellent agreement with the universal mapping.

preprint2009arXiv

Universality and the zero-bias conductance of the single-electron transistor

The thermal dependence of the electrical conductance of the single-electron transistor (SET) in the zero-bias Kondo regime is discussed. An exact mapping to the universal curve for the symmetric Anderson model is established. Linear, the mapping is parametrized by the Kondo temperature and the charge in the Kondo cloud. Illustrative numerical renormalization-group results, in excellent agreement with the mapping, are presented.