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L. M. McGuire

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cond-mat.mes-hall cond-mat.mtrl-sci

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preprint2010arXiv

Valley splitting in a Si/SiGe quantum point contact

We present the theory and measurement of valley splitting in a quantum point contact (QPC) in a modulation doped Si/SiGe heterostructure. Our measurements are performed on a submicron Schottky-gated device. An effective mass theory is developed for a QPC formed in a quantum well, grown on a miscut substrate. Both theory and experiments include a perpendicular magnetic field. Our results indicate that both QPC and magnetic confinement can enhance the valley splitting by reducing the spatial extent of the electronic wavefunction. Consequently, the valley splitting can be much larger than the spin splitting for small magnetic fields. We also observe different valley splittings for different transverse modes in the QPC, supporting the notion that when steps are present at the quantum well interface, the spatial extent of the wavefunction plays a dominant role in determining the valley splitting.

preprint2007arXiv

Controllable valley splitting in silicon quantum devices

Silicon has many attractive properties for quantum computing, and the quantum dot architecture is appealing because of its controllability and scalability. However, the multiple valleys in the silicon conduction band are potentially a serious source of decoherence for spin-based quantum dot qubits. Only when these valleys are split by a large energy does one obtain well-defined and long-lived spin states appropriate for quantum computing. Here we show that the small valley splittings observed in previous experiments on Si/SiGe heterostructures result from atomic steps at the quantum well interface. Lateral confinement in a quantum point contact limits the electron wavefunctions to several steps, and enhances the valley splitting substantially, up to 1.5 meV. The combination of electronic and magnetic confinement produces a valley splitting larger than the spin splitting, which is controllable over a wide range. These results improve the outlook for realizing spin qubits with long coherence times in silicon-based devices.