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L. M. Gaggero-Sager

L. M. Gaggero-Sager contributes to research discovery and scholarly infrastructure.

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Published work

5 published item(s)

preprint2016arXiv

A physical model for dementia

Aging associated brain decline often result in some kind of dementia. Even when this is a complex brain disorder a physical model can be used in order to describe its general behavior. This model is based in first principles. A probabilistic model for the development of dementia is obtained and fitted to some experimental data obtained from the Alzheimer's Disease Neuroimaging Initiative. It is explained how dementia appears as a consequence of aging and why it is irreversible.

preprint2015arXiv

Angle-dependent bandgap engineering in gated graphene superlattices

Graphene Superlattices (GSs) have attracted a lot of attention due to its peculiar properties as well as its possible technological implications. Among these characteristics we can mention: the extra Dirac points in the dispersion relation and the highly anisotropic propagation of the charge carriers. However, despite the intense research that is carried out in GSs, so far there is no report about the angular dependence of the Transmission Gap (TG) in GSs. Here, we report the dependence of TG as a function of the angle of the incident Dirac electrons in a rather simple Electrostatic GS (EGS). Our results show that the angular dependence of the TG is intricate, since for moderated angles the dependence is parabolic, while for large angles an exponential dependence is registered. We also find that the TG can be modulated from meV to eV, by changing the structural parameters of the GS. These characteristics open the possibility for an angle-dependent bandgap engineering in graphene.

preprint2015arXiv

Self-similar Charge Transport in Gapped Graphene

A new type of self-similar potential is used to study a multibarrier system made of graphene. Such potential is based on the traditional middle third Cantor set rule combined with a scaling of the barriers height. The resulting transmission coefficient for charge carriers, obtained using the quantum relativistic Dirac equation, shows a surprising self-similar structure. The same potential does not lead to a self-similar transmission when applied to the typical semiconductors described by the non-relativistic Schrödinger equation. The proposed system is one of the few examples in which a self-similar structure produces the same pattern in a physical property. The resulting scaling properties are investigated as a function of three parameters: the height of the main barrier, the total length of the system and the generation number of the potential. These scaling properties are first identified individually and then combined to find general analytic scaling expressions.

preprint2015arXiv

Self-similar transmission properties of aperiodic Cantor potentials in gapped graphene

We investigate the transmission properties of quasiperiodic or aperiodic structures based on graphene arranged according to the Cantor sequence. In particular, we have found self-similar behaviour in the transmission spectra, and most importantly, we have calculated the scalability of the spectra. To do this, we implement and propose scaling rules for each one of the fundamental parameters: generation number, height of the barriers and length of the system. With this in mind we have been able to reproduce the reference transmission spectrum, applying the appropriate scaling rule, by means of the scaled transmission spectrum. These scaling rules are valid for both normal and oblique incidence, and as far as we can see the basic ingredients to obtain self-similar characteristics are: relativistic Dirac electrons, a self-similar structure and the non-conservation of the pseudo-spin. This constitutes a reduction of the number of conditions needed to observe self-similarity in graphene-based structures, see Díaz-Guerrero et al. [D. S. Díaz-Guerrero, L. M. Gaggero-Sager, I. Rodríguez-Vargas, and G. G. Naumis, arXiv:1503.03412v1, 2015].