Researcher profile

G. G. Naumis

G. G. Naumis contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.dis-nn cond-mat.soft

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preprint2015arXiv

Angle-dependent bandgap engineering in gated graphene superlattices

Graphene Superlattices (GSs) have attracted a lot of attention due to its peculiar properties as well as its possible technological implications. Among these characteristics we can mention: the extra Dirac points in the dispersion relation and the highly anisotropic propagation of the charge carriers. However, despite the intense research that is carried out in GSs, so far there is no report about the angular dependence of the Transmission Gap (TG) in GSs. Here, we report the dependence of TG as a function of the angle of the incident Dirac electrons in a rather simple Electrostatic GS (EGS). Our results show that the angular dependence of the TG is intricate, since for moderated angles the dependence is parabolic, while for large angles an exponential dependence is registered. We also find that the TG can be modulated from meV to eV, by changing the structural parameters of the GS. These characteristics open the possibility for an angle-dependent bandgap engineering in graphene.

preprint2015arXiv

Self-similar Charge Transport in Gapped Graphene

A new type of self-similar potential is used to study a multibarrier system made of graphene. Such potential is based on the traditional middle third Cantor set rule combined with a scaling of the barriers height. The resulting transmission coefficient for charge carriers, obtained using the quantum relativistic Dirac equation, shows a surprising self-similar structure. The same potential does not lead to a self-similar transmission when applied to the typical semiconductors described by the non-relativistic Schrödinger equation. The proposed system is one of the few examples in which a self-similar structure produces the same pattern in a physical property. The resulting scaling properties are investigated as a function of three parameters: the height of the main barrier, the total length of the system and the generation number of the potential. These scaling properties are first identified individually and then combined to find general analytic scaling expressions.

preprint2013arXiv

Centered honeycomb NiSe2 nanoribbons, structure and electronic properties

Quasi one-dimensional nanoribbons are excellent candidates for nanoelectronics, therefore here we investigate by means of density functional theory the structure and electronic properties of a new kind of 1D ribbons, namely: centered honeycomb NiSe2 nanoribbons. Depending on the crystallography and atomic composition of the edges, these ribbons can belong to one of six (two) zigzag (armchair) families. In the zigzag families, after edge reconstruction, all the bare ribbons are metallic. The influence of edge hydrogen passivation produces band gaps in two of the six families. For the armchair nanoribbons, the geometrical reconstruction leads to semiconductors with small band gap and the hydrogen passivation of the edges increases the band gap up to ~0.6 eV.

preprint2013arXiv

Understanding electron behavior in strained graphene as a reciprocal space distortion

The behavior of electrons in strained graphene is usually described using effective pseudomagnetic fields in a Dirac equation. Here we consider the particular case of a spatially constant strain. Our results indicate that lattice corrections are easily understood using a strained reciprocal space, in which the whole energy dispersion is simply shifted and deformed. This leads to a directional dependent Fermi velocity without producing pseudomagnetic fields. The corrections due to atomic wavefunction overlap changes tend to compensate such effects. Also, the analytical expressions for the shift of the Dirac points as well as the corresponding Dirac equation are found. In view of the former results, we discuss the range of applicability of the usual approach of considering pseudomagnetic fields in a Dirac equation derived from the old Dirac points of the unstrained lattice. Such considerations are important if a comparison is desired with experiments or numerical simulations.

preprint2011arXiv

Bifurcation of Stretched Exponential Relaxation in Microscopically Homogeneous Glasses

Measured exponents associated with Stretched Exponential Relaxation (SER) are widely scattered in microscopically inhomogeneous glasses, but accurately bifurcate into two "magic" values, 3/5 and 3/7, in a wide variety of microscopically homogeneous glasses. These bifurcated values are derived here from a statistical product model that involves diffusion of excitations to native traps in the presence of short-range forces only, or combined short- and long- range forces, respectively. Bifurcated SER can be used to monitor sample homogeneity. It explains a wide range of experimental data, and even includes multiple aspects of the citation distributions of 20th century science, involving 25 million papers and 600 million citations, and why these changed radically in 1960. It also shows that the distribution of country population sizes has compacted glassy character, and is strongly influenced by migration.

preprint2007arXiv

Internal mobility edge in doped graphene: frustration in a renormalized lattice

We show that an internal localization mobility edge can appear around the Fermi energy in graphene by introducing impurities in the split-band regimen, or by producing vacancies in the lattice. The edge appears at the center of the spectrum and not at the band edges, in contrast with the usual picture of localization. Such result is explained by showing that the bipartite nature of lattice allows to renormalize the Hamiltonian, and the internal edge appears because of frustration effects in the renormalized lattice. The size in energy of the spectral region with localized states is similar in value to that observed in narrow gap semiconductors.