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L. Kilanski

L. Kilanski appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.str-el

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Published work

10 published item(s)

preprint2015arXiv

Magnetoresistance control in granular Zn/1-x-y/Cd/x/Mn/y/GeAs/2/ nanocomposite ferromagnetic semiconductors

We present studies of structural, magnetic and electrical properties of Zn/1-x-y/Cd/x/Mn/y/GeAs/2/ nanocomposite ferromagnetic semiconductor samples with changeable chemical composition. The presence of MnAs clusters induces in the studied alloy room temperature ferromagnetism with the Curie temperature, TC, around 305 K. The chemical composition of the chalcopyrite matrix controls the geometrical parameters of the clusters inducing different magnetoresistance effects in the crystals. The presence of ferromagnetic clusters in the alloy induces either negative or positive magnetoresistance with different values. The Cd-content allows a change of magnetoresistance sign in our samples from negative (for x = 0.85) to positive (for x = 0.12). The negative magnetoresistance present in the samples with x = 0.85 is observed at temperatures T < 25 K with maximum values of about -32% at T = 1.4 K and B = 13 T, strongly depending on the Mn content, y. The positive magnetoresistance present in the samples with x = 0.12 is observed with maximum values not exceeding 50% at B =13 T and T = 4.3 K, changing with the Mn content, y.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Cluster Altered Magnetic and Transport Properties in Eu Co-Doped Ge(1-x)Mn(x)Te

Magnetic and transport properties of Ge(1-x-y)Mn(x)Eu(y)Te crystals with chemical compositions 0.041 < x < 0.092 and 0.010 < y < 0.043 are studied. Ferromagnetic order is observed at 150 < T < 160 K. Aggregation of magnetic ions into clusters is found to be the source of almost constant, composition independent Curie temperatures in our samples. Magnetotransport studies show the presence of both negative (at T < 25 K) and linear positive (for 25<T <200 K) magnetoresistance effects (with amplitudes not exceeding 2%) in the studied alloy. Negative magnetoresistance detected at T < 25 K is found to be due to a tunneling of spin-polarized electrons between ferromagnetic clusters. A linear positive magnetoresistance is identified to be geometrical effect related with the presence of ferromagnetic clusters inside semiconductor matrix. The product of the polarization constant and the inter-grain exchange constant, J_P, varies between about 0.13 meV and 0.99 meV. Strong anomalous Hall effect (AHE) is observed for T < T_C with coefficients R_S independent of temperature. The scaling analysis of the AHE leads to a conclusion that this effect is due to a skew scattering mechanism.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Homogeneous limit of Cd(1-x)Mn(x)GeAs(2) alloy: electrical and magnetic properties

We present the studies of structural, electrical, and magnetic properties of bulk Cd$_{1\textrm{-}x}$Mn$_{x}$GeAs$_{2}$ crystals with low Mn content, $x$, varying from 0 to 0.037. The studied samples have excellent crystallographic quality indicated by the presence of diffraction patterns never before observed experimentally for this compound. The electrical transport in our samples is dominated by thermal activation of conducting holes from the impurity states to the valence band with activation energy of about 200$\;$meV. The defect states acting as ionic scattering centers with concentration in the range from 6 to 15$\times$10$^{17}$$\;$cm$^{-3}$ are observed. The effective Mn content in our samples, $\bar{x}_θ$, determined from fit of the susceptibility data to the Curie-Weiss law, is very close to the average chemical content, $x$. It indicates that the Mn ions are distributed randomly, substituting the Cd sites in the host CdGeAs$_{2}$ lattice. We observe a negative Curie-Weiss temperature, $|θ|$$\,$$\leq$$\,$3.1$\;$K, increasing as a function of $x$. This indicates the significance of the short-range interactions between the Mn ions.

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preprint2014arXiv

Point defects and p-type conductivity in Zn/1-x/Mn/x/GeAs/2/

Positron annihilation spectroscopy is used to study point defects in Zn/1-x/Mn/x/GeAs/2/ crystals with low Mn content 0 < x < 0.042 with disordered zincblende and chalcopyrite structure. The role of negatively charged vacancies and non-open-volume defects is discussed with respect to the high p-type conductivity with carrier concentration 1E19 < n < 1E21 cm^-3 in our samples. Neutral As vacancies, together with negatively charged Zn vacancies and non-open-volume defects with concentrations around 1E16-1E18 cm^-3, increasing with the amount of Mn in the alloy, are observed. The observed concentrations of defects are not sufficient to be responsible for the strong p-type conductivity of our crystals. Therefore, we suggest that other types of defects, such as extended defects, have a strong influence on the conductivity of Zn1-xMnxGeAs2 crystals.

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preprint2013arXiv

Emergence of pressure-induced metamagnetic-like state in Mn-doped CdGeAs2 chalcopyrite

The effect of hydrostatic pressure on resistivity and magnetic ac susceptibility has been studied in Mn-doped CdGeAs2 room-temperature (RT) ferromagnetic chalcopyrite with two types of MnAs micro-clusters. The slight increase of temperature by about 30 K in the region between RT and Curie temperature TC causes a significant change in the positions of pressure-induced semiconductor-metal transition and magnetic phase transitions in low pressure area. By conducting measurements of the anomalous Hall resistance in the field H \leq 5 kOe, we present experimental evidence for pressure-induced metamagnetic-like state during the paramagnetic phase at pressure P = 5 GPa.

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preprint2013arXiv

Low-Dilution Limit of Zn_{1-x}Mn_{x}GeAs_{2}: electrical and magnetic properties

We present the studies of electrical transport and magnetic interactions in Zn_{1-x}Mn_{x}GeAs_{2} crystals with low Mn content 0 \leq x \leq 0.043. We show that the ionic-acceptor defects are mainly responsible for the strong p-type conductivity of our samples. We found that the negative magnetoresistance (MR) with maximum values of about -50% is related to the weak localization phenomena. The magnetic properties of Zn1-xMnxGeAs2 samples show that the random Mn-distribution in the cation sites of the host lattice occurs only for the sample with the lowest Mn-content, x=0.003. The samples with higher Mn-content show a high level of magnetic frustration. Nonzero Curie-Weiss temperature observed in all our samples indicates that weak ferromagnetic (for x=0.003) or antiferromagnetic (for x>0.005) interactions with |Θ|<3 K are present in this system. The RKKY model, used to estimate the Mn-hole exchange integral Jpd for the diluted Zn/0.997/Mn/0.003/GeAs/2/ sample, makes possible to estimate the value of Jpd =(0.75+/-0.09) eV.

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preprint2012arXiv

Magnetic Interactions in Ge/1-x/Cr/x/Te Semimagnetic Semiconductors

We present the studies of magnetic properties of Ge/1-x/Cr/x/Te diluted magnetic semiconductor with changeable chemical composition 0.016 \leq x \leq 0.061. A spin-glass state (at T \leq 35 K) for x = 0.016 and 0.025 and a ferromagnetic phase (at T < 60 K) for x \geq 0.030 are observed. The long range carrier-mediated magnetic interactions are found to be responsible for the observed magnetic ordering for x < 0.045, while for x \geq 0.045 the spinodal decomposition of Cr ions leads to a maximum and decrease of the Curie temperature, TC, with increasing x. The calculations based on spin waves model are able to reproduce the observed magnetic properties at a homogeneous limit of Cr alloying, e.g. x < 0.04, and prove that carrier mediated Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction is responsible for the observed magnetic states. The value of the Cr-hole exchange integral, Jpd, estimated via fitting of the experimental results with the theoretical model, is in the limits 0.77...0.88 eV.

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preprint2012arXiv

Magnetically active vacancy related defects in irradiated GaN layers

We present the studies of magnetic properties of 2 MeV 4He+-irradiated GaN grown by metal-organic chemical-vapor deposition. Particle irradiation allowed controllable introduction of Ga-vacancy in the samples. The magnetic moments with concentrations changing between 4.3...8.3x10^17 cm^-3 showing superparamagnetic blocking at room temperature are observed. The appearance of clear hysteresis curve at T = 5 K with coercive field of about H_C = 270 Oe suggests that the formation of more complex Ga vacancy related defects is promoted with increasing Ga vacancy content. The small concentration of the observed magnetically-active defects with respect to the total Ga- vacancy concentration suggests that the presence of the oxygen/hydrogen-related vacancy complexes is the source of the observed magnetic moments.

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preprint2012arXiv

Negative magnetoresistance and anomalous Hall effect in GeMnTe-SnMnTe spin-glass-like system

Magnetotransport properties of spin-glass-like Ge/1-x-y/Sn/x/Mn/y/Te mixed crystals with chemical composition changing in the range of 0.083 < x < 0.142 and 0.012 < y < 0.119 are presented. The observed negative magnetoresistance we attribute to two mechanisms i.e. weak localization occurring at low fields and spin disorder scattering giving contribution mainly at higher magnetic fields. A pronounced hysteretic anomalous Hall effect (AHE) was observed. The estimated AHE coefficient shows a small temperature dependence and is dependent on Mn-content, with changes in the range of 10E-7 < R_S < 10E-6 m^3/C. The scaling law analysis has proven that the AHE in this system is due to the extrinsic mechanisms, mainly due to the skew scattering accompanied with the side jump processes.

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preprint2012arXiv

The magnetic interactions in spin-glasslike Ge/1-x-y/Sn/x/Mn/y/Te diluted magnetic semiconductor

We investigated the nature of the magnetic phase transition in the Ge/1-x-y/Sn/x/Mn/y/Te mixed crystals with chemical composition changing in the range of 0.083 < x < 0.142 and 0.012 < y < 0.119. The DC magnetization measurements performed in the magnetic field up to 90 kOe and temperature range 2-200 K showed that the magnetic ordering at temperatures below T = 50 K exhibits features characteristic for both spin-glass and ferromagnetic phases. The modified Sherrington - Southern model was applied to explain the observed transition temperatures. The calculations showed that the spin-glass state is preferred in the range of the experimental carrier concentrations and Mn content. The value of the Mn hole exchange integral was estimated to be J/pd/ = 0.45+/-0.05 eV. The experimental magnetization vs temperature curves were reproduced satisfactory using the non-interacting spin-wave theory with the exchange constant J/pd/ values consistent with those calculated using modified Sherrington - Southern model. The magnetization vs magnetic field curves showed nonsaturating behavior at magnetic fields B < 90 kOe indicating the presence of strong magnetic frustration in the system. The experimental results were reproduced theoretically with good accuracy using the molecular field approximation-based model of a disordered ferromagnet with long-range RKKY interaction.

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