Researcher profile

L. H. Ho

L. H. Ho contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2010arXiv

Electrometry using the quantum Hall effect in a bilayer 2D electron system

We discuss the development of a sensitive electrometer that utilizes a two-dimensional electron gas (2DEG) in the quantum Hall regime. As a demonstration, we measure the evolution of the Landau levels in a second, nearby 2DEG as the applied perpendicular magnetic field is changed, and extract an effective mass for electrons in GaAs that agrees within experimental error with previous measurements.

preprint2010arXiv

Origin of the hysteresis in bilayer 2D systems in the quantum Hall regime

The hysteresis observed in the magnetoresistance of bilayer 2D systems in the quantum Hall regime is generally attributed to the long time constant for charge transfer between the 2D systems due to the very low conductivity of the quantum Hall bulk states. We report electrometry measurements of a bilayer 2D system that demonstrate that the hysteresis is instead due to non-equilibrium induced current. This finding is consistent with magnetometry and electrometry measurements of single 2D systems, and has important ramifications for understanding hysteresis in bilayer 2D systems.

preprint2009arXiv

Ground-plane screening of Coulomb interactions in two-dimensional systems: How effectively can one two-dimensional system screen interactions in another?

The use of a nearby metallic ground-plane to limit the range of the Coulomb interactions between carriers is a useful approach in studying the physics of two-dimensional (2D) systems. This approach has been used to study Wigner crystallization of electrons on the surface of liquid helium, and most recently, the insulating and metallic states of semiconductor-based two-dimensional systems. In this paper, we perform calculations of the screening effect of one 2D system on another and show that a 2D system is at least as effective as a metal in screening Coulomb interactions. We also show that the recent observation of the reduced effect of the ground-plane when the 2D system is in the metallic regime is due to intralayer screening.

preprint2009arXiv

Observation of orientation- and $k$-dependent Zeeman spin-splitting in hole quantum wires on (100)-oriented AlGaAs/GaAs heterostructures

We study the Zeeman spin-splitting in hole quantum wires oriented along the $[011]$ and $[01\bar{1}]$ crystallographic axes of a high mobility undoped (100)-oriented AlGaAs/GaAs heterostructure. Our data shows that the spin-splitting can be switched `on' (finite $g^{*}$) or `off' (zero $g^{*}$) by rotating the field from a parallel to a perpendicular orientation with respect to the wire, and the properties of the wire are identical for the two orientations with respect to the crystallographic axes. We also find that the $g$-factor in the parallel orientation decreases as the wire is narrowed. This is in contrast to electron quantum wires, where the $g$-factor is enhanced by exchange effects as the wire is narrowed. This is evidence for a $k$-dependent Zeeman splitting that arises from the spin-3/2 nature of holes.