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L. Gasparov

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cond-mat.mtrl-sci cond-mat.str-el

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preprint2013arXiv

Thin Film Substrates from the Raman spectroscopy point of view

We have investigated ten standard single crystal substrates of complex oxides on the account of their applicability in the Raman spectroscopy based thin film research. In this study we suggest a spectra normalization procedure that utilizes a comparison of the substrate Raman spectra to those of well-established Raman reference materials. We demonstrate that MgO, LaGaO3, (LaAlO3)_0.3(Sr2AlTaO6)_0.7 (LSAT), DyScO3, YAlO3, and LaAlO3 can be of potential use for a Raman based thin film research. At the same time TiO2 (rutile), NdGaO3, SrLaAlO4, and SrTiO3 single crystals exhibit multiple phonon modes accompanied by strong Raman background that substantially hinder the Raman based thin film experiments.

preprint2012arXiv

Raman study of the Verwey transition in Magnetite at high-pressure and low-temperature; effect of Al doping

We report high-pressure low-temperature Raman studies of the Verwey transition in pure and Al-doped magnetite (Fe_3O_4). The low temperature phase of magnetite displays a number of additional Raman modes that serve as transition markers. These transition markers allow one to investigate the effect of hydrostatic pressure on the Verwey transition temperature. Al-doped magnetite Fe_2.8Al_0.2O_4 (TV=116.5K) displays a nearly linear decrease of the transition temperature with an increase of pressure yielding dP/dT_V = -0.096 GPa/K. In contrast pure magnetite displays a significantly steeper slope of the PT equilibrium line with dP/dT_V = -0.18 GPa/K. The slope of the PT equilibrium lines is related to the changes of the molar entropy and molar volume at the transition. We compare our spectroscopic data with that obtained from the ambient pressure specific heat measurements and find a good agreement in the optimally doped magnetite. Our data indicates that Al doping leads to a smaller entropy change and larger volume expansion at the transition. Our data displays the trends that are consistent with the mean field model of the transition that assumes charge ordering in magnetite.

preprint2009arXiv

Electronic Raman scattering in Magnetite, Spin vs. Charge gap

We report Raman scattering data of single crystals of magnetite (Fe3O4) with Verwey transition temperatures (Tv) of 123 and 117K, respectively. Both single crystals reveal broad electronic background extending up to 900 wavenumbers (~110 meV). Redistribution of this background is observed when samples are cooled below Tv. In particular, spectra of the low temperature phase show diminished background below 300 wavenumbers followed by an enhancement of the electronic background between 300 and 400 wavenumbers. To enhance the effect of this background redistribution we divide the spectra just below the transition by the spectra just above the transition. A resultant broad peak-like feature is observed, centered at 370 wavenumbers (45 meV). The peak position of this feature does not scale with the transition temperature. We discuss two alternative assignments of this feature to a spin or charge gap in magnetite.