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Researcher profile

L. Fruchter

L. Fruchter contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.supr-concond-mat.str-elcond-mat.dis-nncond-mat.mtrl-sci

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Published work

10 published item(s)

preprint2020arXiv

Growth facets of SrIrO3 Thin Films and Single Crystals

The crystallographic orientation of SrIrO3 surfaces is decisive for the occurrence of topological surface states. We show from DFT computations that (001) and (110) free surfaces have comparable energies, and, correspondingly, we experimentally observe that single micro-crystals exhibit both facet orientations. These surfaces are found to relax over typically the length of one oxygen octahedron, defining a structural critical thickness for thin films. A reconstruction of the electronic density associated to tilts of the oxygen octahedra is observed. On the other hand, thin films have invariably been reported to grow along the (110) direction. We show that the interfacial energy associated to the oxygen octahedra distortion for epitaxy is likely at the origin of this specific feature, and propose leads to induce (001) SrIrO3 growth.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Magnetic critical properties and basal-plane anisotropy of Sr$_2$IrO$_4$

The anisotropic magnetic properties of Sr$_2$IrO$_4$ are investigated, using longitudinal and torque magnetometry. The critical scaling across $T_c$ of the longitudinal magnetization is the one expected for the 2D XY universality class. Modeling the torque for a magnetic field in the basal-plane, and taking into account all in-plane and out-of-plane magnetic couplings, we derive the effective 4-fold anisotropy $K_4 \approx$ 1 10$^5$ erg mole$^{-1}$. Although larger than for the cuprates, it is found too small to account for a significant departure from the isotropic 2D XY model. The in-plane torque also allows us to put an upper bound for the anisotropy of a field-induced shift of the antiferromagnetic ordering temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Sr$_2$IrO$_4$ magnetic phase diagram, from resistivity

We show that, contrary to previous belief, the transition to the antiferromagnetic state of Sr$_2$IrO$_4$ in zero magnetic field does show up in the transverse resistivity. We attribute this to a change in transverse integrals associated to the magnetic ordering, which is evaluated considering hopping of the localized charge. The evolution of the resistivity anomaly associated to the magnetic transition under applied magnetic field is studied. It tracks the magnetic phase diagram, allowing to identify three different lines, notably the spin-flip line, associated with the reordering of the ferromagnetic component of the magnetization, and an intriguing line for field induced magnetism, also corroborated by magnetization measurements.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Zero-bias anomalies on Sr$_{0.88}$La$_{0.12}$CuO$_2$ thin films

High-impedance contacts made on the surface of Sr$_{0.88}$La$_{0.12}$CuO$_2$ superconducting thin films systematically display a zero-bias anomaly. We consider two-level systems (TLS) as the origin of this anomaly. We observe that the contribution of some TLS to the contact resistance is weakened by a magnetic field. We show that this could result from the increase of the TLS relaxation rate in the superconducting state, due to its ability to create pairs of quasiparticles out of the condensate, when located close to the surface of the film.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Electric--field effect on electron-doped infinite-layer Sr$_{0.88}$La$_{0.12}$CuO$_{2+x}$ thin films

We have used the electric--field effect to modulate the resistivity of the surface of underdoped Sr$_{0.88}$La$_{0.12}$CuO$_{2+x}$ thin films, allowing opposite modifications of the electron and hole density in the CuO$_2$ planes, an original situation with respect to conventional chemical doping in electron-doped materials. When the Hall effect indicates a large contribution of a hole band, the electric--field effect on the normal state resistivity is however dominated by the electrons, and the superconducting transition temperature increases when carriers are transfered from holes to electrons.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Anisotropy of the in-plane angular magnetoresistance of electron-doed Sr1-xLaxCuO2 thin films

Signatures of antiferromagnetism (AF) in the underdoped Ln2-xCexCuO4 (Ln = Nd, Pr,...) family are observed even for doping levels for which superconductivity exists. We have looked for a similar property in a different electron-doped cuprate family, Sr1-xLaxCuO2, which consists of CuO2 planes separated by Sr/La atoms, and is exempt of the possible influence of magnetic rare earth ions. We report in-plane magnetoresistance measurements in the normal state of underdoped, superconducting, c-axis oriented, epitaxial Sr1-xLaxCuO2 thin films. This probe is sensitive to spin arrangement and we find that the in-plane magnetoresistance, which is negative and does not saturate for T, exhibits an angular dependence when measured upon rotating a magnetic field within the CuO2 planes. The analysis reveals a superposition of fourfold and twofold angular oscillations. Both of these increase in amplitude with increasing field and decreasing and appear below a temperature, which gets higher with decreasing doping levels. Our results demonstrate that these magnetoresistance oscillations, also observed for the Ln2-xCexCuO4 (Ln = Nd, Pr,...) family and attributed to an AF signature, are, without ambiguity, a property of CuO2 planes. Besides, these oscillations vary with doping in an unusual way compared to previous results: fourfold oscillations are essentially present in the more underdoped samples while only twofold oscillations are visible in the less underdoped ones. This intriguing observation appears to be a consequence of spin dilution with increasing doping level.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Penetration depth of electron-doped-infinite-layer Sr$_{0.88}$La$_{0.12}$CuO$_{2+x}$ thin films

The in-plane penetration depth of Sr$_{0.88}$La$_{0.12}$CuO$_{2+x}$ thin films at various doping obtained from oxygen reduction has been measured, using AC susceptibility measurements. For the higher doping samples, the superfluid density deviates strongly from the s-wave behavior, suggesting, in analogy with other electron-doped cuprates, a contribution from a nodal hole pocket, or a small gap on the Fermi surface such as an anisotropic s-wave order parameter. The low value of the superfluid densities, likely due to a strong doping-induced disorder, places the superconducting transition of our samples in the phase-fluctuation regime.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Non linear transport properties of an insulating YBCO nano-bridge

We have investigated the transport properties of an insulating sub-micrometric YBa2Cu3O7-d bridge, patterned on a thin film. As expected for a variable-range-hopping insulator, transport is found non linear. The reduced dimension allows for the observation of an individual fluctuator generating random telegraph noise, which dynamics could be explored as a function of the temperature and transport current. Some recordings clearly exhibit three levels fluctuating resistance, with comparable level separation and correlated dynamics, which likely result from the existence of two states or correlated clustered charge traps.

0 citations0 reviewsNo code linkedOpen access
preprint2007arXiv

Resistance noise in Bi_2Sr_2CaCu_2O$_{8+δ}$

The resistance noise in a Bi_2Sr_2CaCu_2O$_{8+δ}$ thin film is found to increase strongly in the underdoped regime. While the increase of the raw resistance noise with decreasing temperature appears to roughly track the previously reported pseudogap temperature for this material, standard noise analysis rather suggests that the additional noise contribution is driven by the proximity of the superconductor-insulator transition.

0 citations0 reviewsNo code linkedOpen access