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L. Diago-Cisneros

L. Diago-Cisneros appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallmath-phmath.MP

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Published work

7 published item(s)

preprint2015arXiv

Exploring the transport properties of polytypic and twin-plane nanowires: from tunneling phase-time to spin-orbit interaction effects

The variety of nanowire crystal structures gave rise to unique and novel transport phenomena. In particular, we have explored the superlattice profile generated by strain field modulation in twinplane nanowires for the tuning of transport channels and the built-in spin-orbit potential profile of polytypic nanowires, in order to realize a spin filter. The Multicomponent Scattering Approach has been used in terms of the Transfer Matrix Method to describe the phase-time of charge carriers. This system showed advantages for attaining conditions for the propagation of wave packets with negative group velocity. Moreover, the spin transport effect of a potential profile with volumetric spin-orbit bulk inversion asymmetry, as present on polytypic nanowires, was described through the Reverse Runge-Kutta Method. Using the peculiar symmetry of the excited states we have characterized a dominant spin dependence on structural parameters that results in effective spin filtering.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Quantum transport properties in Datta-Das tuned opacity spin-transistors

We studied the spin-dependent quantum transport properties using a simple modelling of a Datta-Das spin transistor. We refine previous results by accounting the propagation medium changes of opacity felt by itinerant electrons, when the gate-voltage is switched on and modelling them via the transversal energy levels mismatch. Monitoring the topological-dependent conductance, we are able to identify the device operating points. If the incoming electrons energy approaches the biased-induced barriers height, the spin-resolved conductance oscillations become significant. In a zero temperature picture, our computations of the spin-dependent conductance as function of the electric field at the region below the gate electrode suggest the feasibility of the modeled device. Although we demonstrate that phase time may not be spin-resolved, our simulation allows us to evaluate the time that takes an electron to experience a spin-flip process, resulting in an order of magnitude lower than typical values of the spin relaxation times.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Rashba-coupling modelling for two-dimensional and high-order Rashba Hamiltonian for one-dimensional confined heavy holes

Based on standard k.p (8 x 8) multiband Hamiltonian, we have deduced an explicit analytical expression for the Rashba-coupling parameter which clarifies its anomalous behavior for heavy holes (hh), gated in quasi-two-dimensional (Q2D) systems, by letting grow the density. Our modelling remarkable better agrees with experimental results in comparison with earlier theoretical models, while recovers the expected cubic dependence on the quasi-momentum. For quasi-one-dimensional (Q1D) hh systems, we have formally derived an effective Rashba Hamiltonian with two competitive terms on the quasi-momentum, a linear term and a cubic one as predicted from suitable approximations to the Q2D scope. The Rashba-coupling parameters also behave anomalously and qualitatively support recent experiments in core/shell nanowires. Furthermore, they exhibit an essential asymptotic discontinuity in the low density regime as a function of the lateral confinement length. For hh, we present closed schemes to accurately quote the Rashba-coupling parameters both for the Q2D and Q1D systems, which become unprecedented for holes.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Permutations of the transverse momentum dependent effective valence-band potential for layered heterostructures. Pseudomorphic strain effects

The evolution of transverse-momentum-dependent effective band offset ($V_{\mathrm{eff}}$) profile for heavy (\emph{hh})- and light-holes (\emph{lh}), is detailed studied. Several new features in the metamorphosis of the standardized fixed-height $V_{\mathrm{eff}}$ profile for holes, in the presence of gradually increasing valence-band mixing and pseudomorphic strain, are presented. In some $III-V$ unstrained semiconducting layered heterostructures a fixed-height potential, is not longer valid for \emph{lh}. Indeed, we found ---as predicted for electrons---, permutations of the $V_{\mathrm{eff}}$ character for \emph{lh}, that resemble a "\emph{keyboard}", together with bandgap changes, whenever the valence-band mixing varies from low to large intensity. Strain is able to diminish the \emph{keyboard} effect on $V_{\mathrm{eff}}$, and also makes it emerge or vanish occasionally. We found that multiband-mixing effects and stress induced events, are competitors mechanisms that can not be universally neglected by assuming a fixed-height rectangular spatial distribution for fixed-character potential energy, as a reliable test-run input for heterostructures. Prior to the present report, neither direct transport-domain measurements, nor theoretical calculations addressed to these $V_{\mathrm{eff}}$ evolutions and permutations, has been reported for holes, as far as we know. Our results may be of relevance for promising heterostructure's design guided by valence-band structure modeling to enhance the hole mobility in $III-V$ materials.

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preprint2013arXiv

Giant conductance and phase time anomalous events of hole quantum transport

Events of giant conductance and anomalies of the phase transmission time for holes, are theoretically investigated within the multicomponent scattering approach. Based on this model, new analytical expressions for unitarity relations in the uncoupled hole transport are obtained and directly applied to study the behavior of the conductance and the phase transmission time in a double barrier resonant tunneling (DBRT) and a superlattice $GaAs$-cladding layer$/(AlAs/GaAs)^{n}/GaAs$-cladding layer. Clear-signature evidences of giant conductance phenomena for hole transmission without valence-band mixing through a DBRT and a superlattice were found. The giant conductance effect losses robustness by manipulating the number of superlattice layers and by including the valence-band particles coupling as well. Phase time through the heterostructure exhibits extremal dependencies in the gaps and in the barriers, as those reported before for electrons. We have detected an earlier arrival phase time for the propagation of both flavors of holes within the barrier, in the order of few tenths of picoseconds. An appealing filter-like effect is presented, whenever a selective confinement strength arises independently for both flavors of holes in the uncoupled regime. Our results also prescribe noticeable evidences for both uncoupled and coupled hole fluxes, similar to those foretold by Hartman, upon transmission of electrons through opaque barriers.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Localization in the ground state of a triple quantum well

A model is presented, consisting of a single structureless particle on the line subject to a potential with three minima, with an exactly soluble ground level. In this model the ground level probability density becomes more sensitive to the global shape of the potential as the distance between the minima increases, so that for big enough distances small variations in the potential bring a qualitative change in the probability density, taking it from a unimodal, localized, distribution, to a bimodal one. We conjecture that this effect, of which we have not found any precedent in the literature, may be relevant in the design and characterization of mesoscopic devices such as triple quantum well systems.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Valence-band effective-potential evolution for coupled holes

We present the metamorphosis in the effective-potential profile of layered heterostructures, for several III-V semiconductor binary compounds, when the band mixing of light and heavy holes increases. A root-locus-like procedure, is directly applied to an eigenvalue quadratic problem obtained from a multichannel system of coupled modes, in the context of multiband effective mass approximation. By letting grow valence-band mixing, it is shown the standard fixed-height rectangular potential-energy for the scatterer distribution, to be a reliable test-run input for heavy holes. On the contrary, this scheme is no longer valid for light holes and a mutable effective \emph{band offset} profile has to be considered instead, whenever the in-plane kinetic energy changes.

0 citations0 reviewsNo code linkedOpen access