Permutations of the transverse momentum dependent effective valence-band potential for layered heterostructures. Pseudomorphic strain effects
The evolution of transverse-momentum-dependent effective band offset (Veff) profile for heavy (\emph{hh})- and light-holes (\emph{lh}), is detailed studied. Several new features in the metamorphosis of the standardized fixed-height Veff profile for holes, in the presence of gradually increasing valence-band mixing and pseudomorphic strain, are presented. In some III−V unstrained semiconducting layered heterostructures a fixed-height potential, is not longer valid for \emph{lh}. Indeed, we found ---as predicted for electrons---, permutations of the Veff character for \emph{lh}, that resemble a "\emph{keyboard}", together with bandgap changes, whenever the valence-band mixing varies from low to large intensity. Strain is able to diminish the \emph{keyboard} effect on Veff, and also makes it emerge or vanish occasionally. We found that multiband-mixing effects and stress induced events, are competitors mechanisms that can not be universally neglected by assuming a fixed-height rectangular spatial distribution for fixed-character potential energy, as a reliable test-run input for heterostructures. Prior to the present report, neither direct transport-domain measurements, nor theoretical calculations addressed to these Veff evolutions and permutations, has been reported for holes, as far as we know. Our results may be of relevance for promising heterostructure's design guided by valence-band structure modeling to enhance the hole mobility in III−V materials.
