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Researcher profile

L. Cario

L. Cario contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.str-elcond-mat.supr-concond-mat.mtrl-sci

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Published work

9 published item(s)

preprint2014arXiv

Amplitude `Higgs' mode in 2H-NbSe2 Superconductor

We report experimental evidences for the observation of the superconducting amplitude mode, so-called `Higgs' mode in the charge density wave superconductor 2H-NbSe2 using Raman scattering. By comparing 2H-NbSe2 and its iso-structural partner 2H-NbS2 which shows superconductivity but lacks the charge density wave order, we demonstrate that the superconducting mode in 2H-NbSe2 owes its spectral weight to the presence of the coexisting charge density wave order. In addition, temperature dependent measurements in 2H-NbSe2 show a full spectral weight transfer from the charge density wave mode to the superconducting mode upon entering the superconducting phase. Both observations are fully consistent with a superconducting amplitude mode or Higgs mode.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

First-Order Insulator-to-Metal Mott Transition in the Paramagnetic 3D System GaTa4Se8

The nature of the Mott transition in the absence of any symmetry braking remains a matter of debate. We study the correlation-driven insulator-to-metal transition in the prototypical 3D Mott system GaTa4Se8, as a function of temperature and applied pressure. We report novel experiments on single crystals, which demonstrate that the transition is of first order and follows from the coexistence of two states, one insulating and one metallic, that we toggle with a small bias current. We provide support for our findings by contrasting the experimental data with calculations that combine local density approximation with dynamical mean-field theory, which are in very good agreement.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Non thermal and purely electronic resistive transition in narrow gap Mott insulators

Mott insulator to metal transitions under electric field are currently the subject of numerous fundamental and applied studies. This puzzling effect, which involves non-trivial out-of-equilibrium effects in correlated systems, is indeed at play in the operation of a new class of electronic memories, the Mott memories. However the combined electronic and thermal effects are difficult to disentangle in Mott insulators undergoing such transitions. We report here a comparison between the properties under electric field of a canonical Mott insulator and a model built on a realistic 2D resistor network able to capture both thermal effects and electronic transitions. This comparison made specifically on the family of narrow gap Mott insulators AM4Q8, (A = Ga or Ge; M=V, Nb or Ta, and Q = S or Se) unambiguously establishes that the resistive transition experimentally observed under electric field arises from a purely electronic mechanism.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Pressure dependence of superconducting critical temperature and upper critical field of 2H-NbS2

We present measurements of the superconducting critical temperature Tc and upper critical field Hc2 as a function of pressure in the transition metal dichalcogenide 2H-NbS2 up to 20 GPa. We observe that Tc increases smoothly from 6K at ambient pressure to about 8.9K at 20GPa. This range of increase is comparable to the one found previously in 2H-NbSe2. The temperature dependence of the upper critical field Hc2(T) of 2H-NbS2 varies considerably when increasing the pressure. At low pressures, Hc2(0) decreases, and at higher pressures both Tc and Hc2(0) increase simultaneously. This points out that there are pressure induced changes of the Fermi surface, which we analyze in terms of a simplified two band approach.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Scanning tunneling spectroscopy of layers of superconducting 2H-TaSe$_\textbf{2}$: Evidence for a zero bias anomaly in single layers

We report a characterization of surfaces of the dichalcogenide TaSe$_2$ using scanning tunneling microscopy and spectroscopy (STM/S) at 150 mK. When the top layer has the 2H structure and the layer immediately below the 1T structure, we find a singular spatial dependence of the tunneling conductance below 1 K, changing from a zero bias peak on top of Se atoms to a gap in between Se atoms. The zero bias peak is additionally modulated by the commensurate $3a_0 \times 3a_0$ charge density wave of 2H-TaSe$_2$. Multilayers of 2H-TaSe$_2$ show a spatially homogeneous superconducting gap with a critical temperature also of 1 K. We discuss possible origins for the peculiar tunneling conductance in single layers.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Ultrafast filling of an electronic pseudogap in an incommensurate crystal

We investigate the quasiperiodic crystal (LaS)1.196(VS2) by angle and time resolved photoemission spectroscopy. The dispersion of electronic states is in qualitative agreement with band structure calculated for the VS2 slab without the incommensurate distortion. Nonetheless, the spectra display a temperature dependent pseudogap instead of quasiparticles crossing. The sudden photoexcitation at 50 K induces a partial filling of the electronic pseudogap within less than 80 fs. The electronic energy flows into the lattice modes on a comparable timescale. We attribute this surprisingly short timescale to a very strong electron-phonon coupling to the incommensurate distortion. This result sheds light on the electronic localization arising in aperiodic structures and quasicrystals.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Temperature driven Vanadium clusterization and band gap enlargement in the layered misfit compound (LaS)$_{1.196}$VS$_2$

Intriguing properties of the misfit layered chalcogenide (LaS)$_{1.196}$VS$_2$ crystals were investigated by transport, optical measurements, angle-resolved photoemission (ARPES) and x-ray diffraction. Although no clear anomaly is found in transport properties as a function of temperature, a large spectral weight transfer, up to at least 1 eV, is observed by both optical and photoemission spectroscopies. ARPES reveals that a nearly filled band with negative curvature, close enough from the Fermi level at 300K to produce metallic-like behaviour as observed in optical conductivity spectra. At low temperature, the band structure is strongly modified, yielding to an insulating state with a optical gap of 120 meV. An accurate (3+1)D analysis of x-ray diffraction data shows that, although a phase transition does not occur, structural distortions increase as temperature is decreased, and vanadium clusterization is enhanced. We found that the changes of electronic properties and structure are intimately related. This indicates that structural distorsion play a major role in the insulating nature of (LaS)$_{1.196}$VS$_2$ and that electronic correlation may not be important, contrary to previous belief. These results shed a new light on the mechanism at the origin of non-linear electric properties observed in (LaS)$_{1.196}$VS$_2$.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Chiral charge order in the superconductor 2H-TaS2

We find chiral charge order in the superconductor 2H-TaS2 using Scanning Tunneling Microscopy and Spectroscopy (STM/S) at 0.1 K. Topographic images show hexagonal atomic lattice and charge density wave (CDW) with clockwise and counterclockwise charge modulations. Tunneling spectroscopy reveals the superconducting density of states, disappearing at Tc = 1.75 K and showing a wide distribution of values of the superconducting gap, centered around Δ=0.28 meV.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Specific-heat measurements of superconducting NbS2 single crystal in an external magnetic field: Study on the energy gap structure

The heat capacity of a 2H-NbS2 single crystal has been measured by a highly sensitive ac technique down to 0.6 K and in magnetic fields up to 14 T. At very low temperatures data show excitations over an energy gap (2DS/kBTc \approx 2.1) much smaller than the BCS value. The overall temperature dependence of the electronic specific heat Ce can be explained either by the existence of a strongly anisotropic single-energy gap or within a two-gap scenario with the large gap about twice bigger than the small one. The field dependence of the Sommerfeld coefficient shows a strong curvature for both principal-field orientations, parallel and perpendicular to the c axis of the crystal, resulting in a magnetic field dependence of the superconducting anisotropy. These features are discussed in comparison to the case of MgB2 and to the data obtained by scanning-tunneling spectroscopy. We conclude that the two-gap scenario better describes the gap structure of NbS2 than the anisotropic s-wave model.

0 citations0 reviewsNo code linkedOpen access