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Kyeongjae Cho

Kyeongjae Cho appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-elcond-mat.supr-conphysics.chem-phphysics.app-phphysics.atm-clusphysics.atom-phphysics.comp-ph

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Published work

12 published item(s)

preprint2020arXiv

First-principles study of metal-graphene edge contact for ballistic Josephson junction

Edge-contacted superconductor-graphene-superconductor Josephson junction have been utilized to realize topological superconductivity, which have shown superconducting signatures in the quantum Hall regime. We perform the first-principles calculations to interpret electronic couplings at the superconductor-graphene edge contacts by investigating various aspects in hybridization of molybdenum d orbitals and graphene $π$ orbitals. We also reveal that interfacial oxygen defects play an important role in determining the doping type of graphene near the interface.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Real-time ab initio simulation of inelastic electron scattering using the exact, density functional, and alternative approaches

To investigate inelastic electron scattering, which is ubiquitous in various fields of study, we carry out ab initio study of the real-time dynamics of a one-dimensional electron wave packet scattered by a hydrogen atom using different methods: the exact solution, the solution provided by time-dependent density functional theory (TDDFT), and the solutions given by alternative approaches. This research not only sheds light on inelastic scattering processes but also verifies the capability of TDDFT in describing inelastic electron scattering. We revisit the adiabatic local-density approximation (ALDA) in describing the excitation of the target during the scattering process along with a self-interaction correction and spin-polarized calculations. Our results reveal that the ALDA severely underestimates the energy transferred in the regime of low incident energy particularly for a spin-singlet system. After demonstrating alternative approaches, we propose a hybrid ab initio method to deal with the kinetic correlation alongside TDDFT. This hybrid method would facilitate first-principles studies of systems in which the correlation of a few electrons among many others is of interest.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Why In2O3 Can Make 0.7 nm Atomic Layer Thin Transistors?

In this work, we demonstrate enhancement-mode field-effect transistors by atomic-layer-deposited (ALD) amorphous In2O3 channel with thickness down to 0.7 nm. Thickness is found to be critical on the materials and electron transport of In2O3. Controllable thickness of In2O3 at atomic scale enables the design of sufficient 2D carrier density in the In2O3 channel integrated with the conventional dielectric. The threshold voltage and channel carrier density are found to be considerably tuned by channel thickness. Such phenomenon is understood by the trap neutral level (TNL) model where the Fermi-level tends to align deeply inside the conduction band of In2O3 and can be modulated to the bandgap in atomic layer thin In2O3 due to quantum confinement effect, which is confirmed by density function theory (DFT) calculation. The demonstration of enhancement-mode amorphous In2O3 transistors suggests In2O3 is a competitive channel material for back-end-of-line (BEOL) compatible transistors and monolithic 3D integration applications.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure

Controllable doping of two-dimensional materials is highly desired for ideal device performance in both hetero- and p-n homo-junctions. Herein, we propose an effective strategy for doping of MoS2 with nitrogen through a remote N2 plasma surface treatment. By monitoring the surface chemistry of MoS2 upon N2 plasma exposure using in-situ X-ray photoelectron spectroscopy, we identified the presence of covalently bonded nitrogen in MoS2, where substitution of the chalcogen sulfur by nitrogen is determined as the doping mechanism. Furthermore, the electrical characterization demonstrates that p-type doping of MoS2 is achieved by nitrogen doping, in agreement with theoretical predictions. Notably, we found that the presence of nitrogen can induce compressive strain in the MoS2 structure, which represents the first evidence of strain induced by substitutional doping in a transition metal dichalcogenide material. Finally, our first principle calculations support the experimental demonstration of such strain, and a correlation between nitrogen doping concentration and compressive strain in MoS2 is elucidated.

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preprint2014arXiv

Electronic Properties of MoS2/HfO2 Interface: Impact of Interfacial Impurities during Atomic Layer Deposition Growth

Using ab-initio calculations within the framework of Density Functional Theory (DFT), atomic structures and electronic properties of MoS2/HfO2 interface are investigated. The impact of interfacial oxygen concentration on the MoS2/HfO2 interface electronic structure is examined in order to mimic the atomic layer deposition growth at ambient conditions. Then, the effect on band offsets and the thermodynamic stability of those interfaces is investigated and compared with available relevant experimental data. These results seem to indicate that, for a well-prepared interface, the electronic device performance should be better than other interfaces like III-V/high-k due to the absence of interface defect states. However, any unpassivated defects, if present during oxide growth, strongly influence the subsequent electronic properties of the interface.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Band alignment of two-dimensional transition metal dichalcogenides: application in tunnel field effect transistors

Tunnel field effect transistors (TFETs) based on vertical stacking of two dimensional materials are of interest for low-power logic devices. The monolayer transition metal dichalcogenides (TMDs) with sizable band gaps show promise in building p-n junctions (couples) for TFET applications. Band alignment information is essential for realizing broken gap junctions with excellent electron tunneling efficiencies. Promising couples composed of monolayer TMDs are suggested to be VIB-MeX2 (Me= W, Mo; X= Te, Se) as the n-type source and IVB-MeX2 (Me = Zr, Hf; X= S, Se) as the p-type drain by density functional theory calculations.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Reversible Superconductivity in Electrochromic Indium-Tin Oxide Films

Transparent conductive indium tin oxide (ITO) thin films, electrochemically intercalated with sodium or other cations, show tunable superconducting transitions with a maximum $T_c$ at 5 K. The transition temperature and the density of states, $D(E_F)$ (extracted from the measured Pauli susceptibility $χ_p$ exhibit the same dome shaped behavior as a function of electron density. Optimally intercalated samples have an upper critical field $\approx 4$ T and $Δ/{k_BT_c} \approx 2.0$. Accompanying the development of superconductivity, the films show a reversible electrochromic change from transparent to colored and are partially transparent (orange) at the peak of the superconducting dome. This reversible intercalation of alkali and alkali earth ions into thin ITO films opens diverse opportunities for tunable, optically transparent superconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Computational studies for reduced graphene oxide in hydrogen-rich environment

We employ molecular dynamic simulations to study the reduction process of graphene-oxide (GO) in a chemically active environment enriched with hydrogen. We examine the concentration and pressure of hydrogen gas as a function of temperature in which abstraction of oxygen is possible with minimum damage to C-sp$^2$ bonds hence preserving the integrity of the graphene sheet. Through these studies we find chemical pathways that demonstrate beneficiary mechanisms for the quality of graphene including formation of water as well as suppression of carbonyl pair holes in favor of hydroxyl and epoxy formation facilitated by hydrogen gas in the environment.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Field emission from atomically thin edges of reduced graphene oxide

Point sources exhibit low threshold electron emission due to local field enhancement at the tip. The development and implementation of tip emitters have been hampered by the need to position them sufficiently apart to achieve field enhancement, limiting the number of emission sites and therefore the overall current. Here we report low threshold field (< 0.1V/um) emission of multiple electron beams from atomically thin edges of reduced graphene oxide (rGO). Field emission microscopy (FEM) measurements show evidence for interference from emission sites that are separated by a few nanometers, suggesting that the emitted electron beams may be coherent. Based on our high-resolution transmission electron microscopy, infrared spectroscopy and simulation results, field emission from the rGO edge is attributed to a stable and unique aggregation of oxygen groups in the form of cyclic edge ethers. Such closely spaced electron beams from rGO offer prospects for novel applications and understanding the physics of linear electron sources.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Thermal Properties of Isotopically Engineered Graphene

In addition to its exotic electronic properties graphene exhibits unusually high intrinsic thermal conductivity. The physics of phonons - the main heat carriers in graphene - was shown to be substantially different in two-dimensional (2D) crystals, such as graphene, than in three-dimensional (3D) graphite. Here, we report our experimental study of the isotope effects on the thermal properties of graphene. Isotopically modified graphene containing various percentages of 13C were synthesized by chemical vapor deposition (CVD). The regions of different isotopic composition were parts of the same graphene sheet to ensure uniformity in material parameters. The thermal conductivity, K, of isotopically pure 12C (0.01% 13C) graphene determined by the optothermal Raman technique, was higher than 4000 W/mK at the measured temperature Tm~320 K, and more than a factor of two higher than the value of K in a graphene sheets composed of a 50%-50% mixture of 12C and 13C. The experimental data agree well with our molecular dynamics (MD) simulations, corrected for the long-wavelength phonon contributions via the Klemens model. The experimental results are expected to stimulate further studies aimed at better understanding of thermal phenomena in 2D crystals.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Isotope Effect on the Thermal Conductivity of Graphene

The thermal conductivity (TC) of isolated graphene with different concentrations of isotopes (C13) is studied with equilibrium molecular dynamics method at 300K. In the limit of pure C12 or C13 graphene, TC of graphene in zigzag and armchair directions are ~630 W/mK and ~1000W/mK, respectively. We find that the TC of graphene can be maximally reduced by ~80%, in both armchair and zigzag directions, when a random distribution of C12 and C13 is assumed at different doping concentrations. Therefore, our simulation results suggest an effective way to tune the TC of graphene without changing its atomic and electronic structure, thus yielding a promising application for nanoelectronics and thermoelectricity of graphene based nano-device.

0 citations0 reviewsNo code linkedOpen access
preprint2002arXiv

Thermal Expansion and Diffusion Coefficients of Carbon Nanotube-Polymer Composites

Classical molecular dynamics (MD) simulations employing Brenner potential for intra-nanotube interactions and Van der Waals forces for polymer-nanotube interfaces are used to invetigate the thermal expansion and diffusion characteristics of carbon nanotube-polyethylene composites. Additions of carbon nanotubes to polymer matrix are found to increase the glass transition temperature Tg, and thermal expansion and diffusion coefficients in the composite above Tg. These findings could have implications in CNT composite processing, coating and painting applications.

0 citations0 reviewsNo code linkedOpen access