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Kwantae Kim

Kwantae Kim contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2026arXiv

A 2.5 $μ$W 30 nV/$\surd$Hz Instrumentation Amplifier for Bioimpedance Sensors with Source Degenerated Current Mirror and DTMOS Transistor

This paper proposes a low-power and low-noise instrumentation amplifier (IA) tailored for bioimpedance sensing applications. The design originates from a gain-boosted flipped voltage follower (FVF) transconductance (TC) stage and integrates two complementary circuit techniques to improve the noise performance. To achieve an optimal balance between input-referred noise and available voltage headroom, a source-degenerated current mirror (SDCM) is adopted, resulting in reducing the input-referred noise by 7.95% compared with a conventional current mirror structure. In addition, a dynamic threshold MOSFET (DTMOS) scheme is employed to enhance the effective transconductance, leading to a further 11.66% reduction in input-referred noise. Simulated in a 28 nm CMOS process demonstrate that the proposed IA achieves an input-referred noise floor of 30 nV/$\surd$Hz and a bandwidth of 1.44 MHz, while consuming only 2.5 $μ$W from a 0.8 V supply. Compared to the baseline design, the proposed approach achieves a 32.4% reduction in power consumption without degrading noise performance. The complete design parameters are open-sourced in this paper, to ensure reproducibility and facilitate future developments.

preprint2022arXiv

A 23 $μ$W Keyword Spotting IC with Ring-Oscillator-Based Time-Domain Feature Extraction

This article presents the first keyword spotting (KWS) IC which uses a ring-oscillator-based time-domain processing technique for its analog feature extractor (FEx). Its extensive usage of time-encoding schemes allows the analog audio signal to be processed in a fully time-domain manner except for the voltage-to-time conversion stage of the analog front-end. Benefiting from fundamental building blocks based on digital logic gates, it offers a better technology scalability compared to conventional voltage-domain designs. Fabricated in a 65 nm CMOS process, the prototyped KWS IC occupies 2.03mm$^{2}$ and dissipates 23 $μ$W power consumption including analog FEx and digital neural network classifier. The 16-channel time-domain FEx achieves 54.89 dB dynamic range for 16 ms frame shift size while consuming 9.3 $μ$W. The measurement result verifies that the proposed IC performs a 12-class KWS task on the Google Speech Command Dataset (GSCD) with >86% accuracy and 12.4 ms latency.