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Kurt Kummer

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Published work

6 published item(s)

preprint2022arXiv

Investigation of metamagnetism and crystal-field splitting in pseudo-hexagonal CeRh$_3$Si$_2$

CeRh$_3$Si$_2$ has been reported to exhibit metamagnetic transitions below 5~K, a giant crystal field splitting, and anisotropic magnetic properties from single crystal magnetization and heat capacity measurements. Here we report results of neutron and x-ray scattering studies of the magnetic structure and crystal-field excitations to further understand the magnetism of this compound. Inelastic neutron scattering (INS) and resonant inelastic x-ray scattering (RIXS) reveal a $J_z$\,=\,1/2 groundstate for Ce when considering the crystallographic $a$ direction as quantization axis, thus explaining the anisotropy of the static susceptibility. Furthermore, we find a total splitting of 78\,meV for the $J$\,=\,5/2 multiplet. The neutron diffraction study in zero field reveals that on cooling from the paramagnetic state, the system first orders at $T_{\text{N}_1}=4.7$\,K in a longitudinal spin density wave with ordered Ce moments along the $b$-axis (i.e. the [0 1 0] crystal direction) and an incommensurate propagation vector $\textbf{k}=(0,0.43,0$). Below the lower-temperature transition $T_{\text{N}_2}=4.48$\,K, the propagation vector locks to the commensurate value $\textbf{k}=(0,0.5,0)$, with a so-called lock-in transition. Our neutron diffraction study in applied magnetic field $H\parallel b$-axis shows a change in the commensurate propagation vector and development of a ferromagnetic component at $H=3$\,kOe, followed by a series of transitions before the fully field-induced ferromagnetic phase is reached at $H = 7$\,kOe. This explains the nature of the steps previously reported in field-dependent magnetization measurements. A very similar behaviour is also observed for the $H\parallel$ [0 1 1] crystal direction.

preprint2021arXiv

A full gap above the Fermi level: the charge density wave of monolayer VS2

In the standard model of charge density wave (CDW) transitions, the displacement along a single phonon mode lowers the total electronic energy by creating a gap at the Fermi level, making the CDW a metal--insulator transition. Here, using scanning tunneling microscopy and spectroscopy and ab initio calculations, we show that VS$_2$ realizes a CDW which stands out of this standard model. There is a full CDW gap residing in the unoccupied states of monolayer VS$_2$. At the Fermi level, the CDW induces a topological metal-metal (Lifshitz) transition. Non-linear coupling of transverse and longitudinal phonons is essential for the formation of the CDW and the full gap above the Fermi level. Additionally, x-ray magnetic circular dichroism reveals the absence of net magnetization in this phase, pointing to coexisting charge and spin density waves in the ground state.

preprint2013arXiv

Strong ferromagnetism at the surface of an antiferromagnet caused by buried magnetic moments

Carrying a large, pure spin magnetic moment of 7 $μ$bohr/atom in the half-filled 4f shell, divalent europium is an outstanding element for assembling novel magnetic devices in which a two-dimensional electron gas (2DEG) is polarized due to exchange interaction with an underlying magnetically-active Eu layer, even in the absence of a magnetic field. A natural example for such geometry is the intermetallic layered material EuRh$_2$Si$_2$, in which magnetically active layers of Eu are well separated from each other by non-magnetic Si-Rh-Si trilayers. Applying angle-resolved photoelectron spectroscopy (ARPES) to this system, we discovered a large spin splitting of a Shockley-type surface state formed by itinerant electrons of the Si-Rh-Si surface related trilayer. ARPES shows that the splitting sets in below approx. 32.5K and quickly saturates to around 150meV upon cooling. Interestingly, this temperature is substantially higher than the order temperature of the Eu 4f moments (approx. 24.5K) in the bulk. Our results clearly show that the magnetic exchange interaction between the surface state and the buried 4f moments in the 4th subsurface layer is the driving force for the formation of itinerant ferromagnetism at the surface. We demonstrate that the observed spin splitting of the surface state, reflecting properties of 2DEG, is easily controlled by temperature. Such a splitting may also be induced into states of functional surface layers deposited onto the surface of EuRh$_2$Si$_2$ or similarly ordered magnetic materials with metallic or semiconducting properties.

preprint2012arXiv

Using a dual plasma process to produce cobalt--polypyrrole catalysts for the oxygen reduction reaction in fuel cells -- part I: characterisation of the catalytic activity and surface structure

A new dual plasma coating process to produce platinum-free catalysts for the oxygen reduction reaction in a fuel cell is introduced. The catalysts thus produced were analysed with various methods. Electrochemical characterisation was carried out by cyclic voltammetry, rotating ring- and rotating ring-disk electrode. The surface porosity of the different catalysts thus obtained was characterised with the nitrogen gas adsorption technique and scanning electron microscopy was used to determine the growth mechanisms of the films. It is shown that catalytically active compounds can be produced with this dual plasma process. Furthermore, the catalytic activity can be varied significantly by changing the plasma process parameters. The amount of H$_2$O$_2$ produced was calculated and shows that a 2 electron mechanism is predominant. The plasma coating mechanism does not significantly change the surface BET area and pore size distribution of the carbon support used. Furthermore, scanning electron microscopy pictures of the produced films are presented and show the preference of columnar growth mechanisms. By using different carbons as the support it is shown that there is a strong dependence of the catalytic activity that is probably related to the chemical properties of the carbon.

preprint2012arXiv

Using a dual plasma process to produce cobalt--polypyrrole catalysts for the oxygen reduction reaction in fuel cells -- part II: analysing the chemical structure of the films

The chemical structure of cobalt--polypyrrole -- produced by a dual plasma process -- is analysed by means of X-ray photoelectron spectroscopy (XPS), near edge X-ray absorption spectroscopy (NEXAFS), X-ray diffraction (XRD), energy-dispersive X-Ray spectroscopy (EDX) and extended x-ray absorption spectroscopy (EXAFS).It is shown that only nanoparticles of a size of 3\,nm with the low temperature crystal structure of cobalt are present within the compound. Besides that, cobalt--nitrogen and carbon--oxygen structures are observed. Furthermore, more and more cobalt--nitrogen structures are produced when increasing the magnetron power. Linking the information on the chemical structure to the results about the catalytic activity of the films -- which are presented in part I of this contribution -- it is concluded that the cobalt--nitrogen structures are the probable catalytically active sites. The cobalt--nitrogen bond length is calculated as 2.09\,Å and the carbon--nitrogen bond length as 1.38\,Å.

preprint2009arXiv

Dynamics of graphene growth on a metal surface: a time-dependent photoemission study

Applying time-dependent photoemission we unravel the graphene growth process on a metallic surface by chemical vapor deposition (CVD). Graphene CVD growth is in stark contrast to the standard growth process of two--dimensional films because it is self-limiting and stops as soon as a monolayer graphene has been synthesized. Most importantly, a novel phase of metastable graphene was discovered that is characterized by permanent and simultaneous construction and deconstruction. The high quality and large area graphene flakes are characterized by angle-resolved photoemission proofing that they are indeed monolayer and cover the whole 1$\times$1 cm Nickel substrate. These findings are of high relevance to the intensive search for reliable synthesis methods for large graphene flakes of controlled layer number.