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Kuang-Hong Gao

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cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.supr-con

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preprint2022arXiv

High-mobility two-dimensional electron gas in $γ$-Al$_2$O$_3$/SrTiO$_3$ heterostructures

The origin of the two-dimensional electron gas (2DEG) in the interface between $γ$-Al$_2$O$_3$ (GAO) and SrTiO$_3$ (STO) (GAO/STO) as well as the reason for the high mobility of the 2DEG is still in debate. In this paper, the electronic structures of [001]-oriented GAO/STO heterostructures with and without oxygen vacancies are investigated by first-principle calculations based on the density functional theory. The calculation results show that the necessary condition for the formation of 2DEG is that the GAO/STO heterostructure has the interface composed of Al and TiO$_2$ layers. For the heterostructure without oxygen vacancy on the GAO side, the 2DEG originates from the polar discontinuity near the interface, and there is a critical thickness for the GAO film, below which the 2DEG would not present and the heterostructure exhibits insulator characteristics. For the case that only the GAO film contains oxygen vacancies, the polar discontinuity near the interface disappears, but the 2DEG still exists. In this situation, the critical thickness of the GAO film for 2DEG formation does not exist either. When the GAO film and STO substrate both contain oxygen vacancies, it is found that the 2DEG retains as long as the oxygen vacancies on the STO side are not very close to the interface. The low-temperature mobilities of the 2DEGs in these GAO/STO heterostructures are considered to be governed by the ionized impurity scattering, and $\sim$3 to $\sim$11 times as large as that in LaAlO$_3$/SrTiO$_3$ heterojunction. The high mobility of the 2DEG is mainly due to the small electron effective mass in GAO/STO heterostructure.

preprint2020arXiv

Disorder and magnetic field induced Bose-metal state in two-dimensional Ta$_x$(SiO$_2$)$_{1-x}$ granular films

The origin of the intermediate anomalous metallic state in two-dimensional superconductor materials remains enigmatic. In the present paper, we observe such a state in a series of $\sim$9.0 nm thick Ta$_x$(SiO$_2$)$_{1-x}$ ($x$ being the volume fraction of Ta) nanogranular films. At zero field, the $x$ $\gtrsim$ 0.75 films undergo a Berezinskii-Kosterlitz-Thouless transition as transform from normal to superconducing states upon cooling. For the $x$ $\lesssim$ 0.71 films, the resistance increases with decreasing temperature from 2 K down to 40 mK. A normal state to anomalous metallic state transition is observed in the $x$ $\simeq$ 0.73 film, i.e., near the transition temperature, the resistance of the film decreases sharply upon cooling as if the system would cross over to superconducting state, but then saturates to a value far less than that in normal state. When a small magnetic field perpendicular to the film plane is applied, the anomalous metallic state occurs in the $x$ $\gtrsim$ 0.75 films. It is found that both disorder and magnetic field can induce the transition from superconductor to anomalous metal and their influences on the transition are similar. For the the magnetic field induced case, we find the sheet resistance $R_{\square}(T,H)$ ($T$ and $H$ being the temperature and the magnitude of magnetic field) data near the crossover from the anomalous metal to superconductor and in the vicinity of the anomalous metal to insulator transition, respectively, obey unique scaling laws deduced from the Bose-metal model. Our results strongly suggest that the anomalous metallic state in the Ta$_x$(SiO$_2$)$_{1-x}$ granular films is bosonic and dynamical gauge field fluctuation resulting from superconducting quantum fluctuations plays a key role in its formation.

preprint2015arXiv

Crossover of electron-electron interaction effect in Sn-doped indium oxide films

We systematically study the structures and electrical transport properties of a series of Sn-doped indium oxide (ITO) films with thickness $t$ ranging from $\sim$5 to $\sim$53\,nm. Scanning electron microscopy and x-ray diffraction results indicate that the $t\lesssim 16.8$\,nm films are polycrystalline, while those $t\gtrsim 26.7$\,nm films are epitaxially grown along [100] direction. For the epitaxial films, the Altshuler and Aronov electron-electron interaction (EEI) effect governs the temperature behaviors of the sheet conductance $σ_\square$ at low temperatures, and the ratios of relative change of Hall coefficient $ΔR_H/R_H$ to relative change of sheet resistance $ΔR_\square/R_\square$ are $\approx$2, which is quantitatively consistent with Altshuler and Aronov EEI theory and seldom observed in other systems. For those polycrystalline films, both the sheet conductance and Hall coefficient vary linearly with logarithm of temperature below several tens Kelvin, which can be well described by the current EEI theories in granular metals. We extract the intergranular tunneling conductance of each film by comparing the $σ_\square(T)$ data with the predication of EEI theories in granular metals. It is found that when the tunneling conductance is less than the conductance of a single indium tin oxide (ITO) grain, the ITO film reveals granular metal characteristics in transport properties, conversely, the film shows transport properties of homogeneous disordered conductors. Our results indicate that electrical transport measurement can not only reveal the underlying charge transport properties of the film but also be a powerful tool to detect the subtle homogeneity of the film.