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Researcher profile

Ku-Ding Tsuei

Ku-Ding Tsuei contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.str-elcond-mat.mes-hallcond-mat.stat-mech

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Published work

4 published item(s)

preprint2020arXiv

Stabilization of Nonmagnetic Hexagonal Close-Packed Phase in Nanocrystalline Nickel Metal with a Giant Volume Expansion

Nanocrystalline Ni can adopt a hexagonal close-packed (hcp) structure,which does not appear in a bulk form under any conditions.Structural studies found its $>$ 20% expansion of volume per atom compared with face-centered cubic (fcc) Ni.Hard x-ray photoemission spectroscopy of the hcp phase revealed a $>$ 0.14 valence electron transfer from 3$d$ to 4$s$ and 4$p$ orbitals and a 0.25 eV reduction in band energy per electron compared with the fcc phase.Its nonmagnetic nature was attributed to a low density of states at the Fermi level.Thermodynamic stability of the hcp phase can be explained by the band energy gain and the electrostatic potential energy loss as related to the large lattice expansion.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Unified understanding of the valence transition in the rare-earth monochalcogenides under pressure

Valence instability is a key ingredient of the unusual properties of f electron materials, yet a clear understanding is lacking as it involves a complex interplay between f electrons and conduc- tion states. Here we propose a unified picture of pressure-induced valence transition in Sm and Yb monochalcogenides, considered as model system for mixed valent 4f-electron materials. Using high-resolution x-ray absorption spectroscopy, we show that the valence transition is driven by the promotion of a 4f electron specifically into the lowest unoccupied (LU) 5d t2g band. We demonstrate with a promotional model that the nature of the transition at low pressures is intimately related to the density of states of the LU band, while at high pressures it is governed by the hybridization strength. These results set a new standard for the generic understanding of valence fluctuations in f-electron materials.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Higgs transition from a magnetic Coulomb liquid to a ferromagnet in Yb_2Ti_2O_7

In a class of frustrated magnets known as spin ice, magnetic monopoles emerge as classical defects and interact via the magnetic Coulomb law. With quantum-mechanical interactions, these magnetic charges are carried by fractionalised bosonic quasi-particles, spinons, which can undergo Bose-Einstein condensation through a first-order transition via the Higgs mechanism. Here, we report evidence of a Higgs transition from a magnetic Coulomb liquid to a ferromagnet in single-crystal Yb2Ti2O7. Polarised neutron-scattering experiments show that the diffuse [111]-rod scattering and pinch-point features which develop on cooling are suddenly suppressed below T_C ~ 0.21 K, where magnetic Bragg peaks and a full depolarisation of the neutron spins are observed with thermal hysteresis, indicating a first-order ferromagnetic transition. Our results are explained on the basis of a quantum spin-ice model, whose high-temperature phase is effectively described as a magnetic Coulomb liquid, while the ground state shows a nearly collinear ferromagnetism with gapped spin excitations.

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preprint2010arXiv

Dispersive resonance bands within the space charge layer of metal- semiconductor junction

Based on measurements of angle resolved photoemission, we report that in the Pb/Ge(111)- \sqrt{3}x\sqrt{3} R30^\circ structure, in addition to three bands resembling Ge heavy hole (HH), light hole (LH), and split off (SO) bulk band edges, a fourth dispersive band resembling the non split off (NSO) band is found near the surface zone center. While three Ge bulk-like bands get distorted due to strong coupling between Pb and Ge, the NSO-like band gets weaker and disappears for larger thickness of Pb, which, when combined with ab initio calculations, indicates its localized nature within space charge layer. Our results are clearly important for designing electronics involved with metal-semiconductor contacts.

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