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Krishan Kumar

Krishan Kumar contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2026arXiv

Nonadiabatic couplings drive ultrafast, mode-selective intramolecular vibrational energy redistribution in flavins

Flavins are the chromophores in several blue-light-sensitive photoreceptor proteins and act as redox cofactors in many enzymes relevant for biological processes. Despite their biological relevance and numerous, detailed optical investigations of their photophysical properties, the ultrafast nonequilibrium dynamics of their elementary optical excitations are not yet fully known. Here, we use ultrafast coherent vibrational spectroscopy with 10-fs time resolution in the 450-nm spectral range to study their excited state coherent vibrational dynamics. We observe that coherent wavepacket motion along high-frequency C-C stretching modes with ~ 20-fs period is rapidly damped on a 20-fs timescale. In contrast, coherent motion along several low-frequency modes persists much longer. We attribute this to a mode-selective intramolecular vibrational energy redistribution driven by nonadiabatic couplings between the optical bright state and a close-lying dark electronic state, in accordance with model calculations. Our results may be of relevance for the formation of long-lived radical pair states in magnetic-field sensitive proteins.

preprint2022arXiv

Square lattice formation in a monodisperse complex plasma

We present the first observations of a square lattice formation in a monodisperse complex plasma system - a configurational transition phenomenon that has long been an experimental challenge in the field. The experiments are conducted in a tabletop L-shaped Dusty Plasma Experimental (DPEx-II) device in a DC glow discharge Argon plasma environment. By a careful control of the vertical potential confining the charged particles as well as the strength of the ion wake charge interactions with the dust particles we are able to steer the system towards a crystalline phase that exhibits a square lattice configuration. The transition occurs when the vertical confinement strength is slightly reduced below a critical value leading to a buckling of the monodisperse hexagonal 2D dust crystal to form a narrowly separated bilayer state (a quasi-2D state). Some theoretical insights into the transition process are provided through Molecular Dynamics (MD) simulations carried out for the parameters relevant to our experiment.

preprint2020arXiv

Periodic Fluorescence Variations of CdSe Quantum Dots Coupled to Aryleneethynylenes with Aggregation Induced Emission

CdSe nanocrystals and aggregates of an aryleneethynylene derivative are assembled into a hybrid thin film with dual fluorescence from both fluorophores. Under continuous excitation, the nanocrystals and the molecules exhibit anti-correlated fluorescence intensity variations, which become periodic at low temperature. We attribute this to a structure-dependent aggregation induced emission of the aryleneethynylene derivative, which impacts the rate of excitation energy transfer between the molecules and nanocrystals. Energy transfer also affects the electric transport properties of the hybrid material under optical excitation. This work highlights that combining semiconductor nanocrystals with molecular aggregates, which exhibit aggregation induced emission, can result in unprecedented emerging optical properties.

preprint2011arXiv

Spin properties of a two dimensional electron system: valley degeneracy and finite thickness effects

The spin susceptibility of a two-dimensional electron system is calculated by determining the spin-polarization dependence of the ground-state energy within the self-consistent mean-field theory of Singwi et al. (STLS). Results are presented for three different devices, viz. the Si (100) inversion layer, the AlAs quantum well, and the GaAs heterojunction-insulated gate field-effect transistor. We find a fairly good agreement with experiments for the Si (100) system, on most of the experimental density range, whereas the agreement for the AlAs and GaAs systems is less satisfactory; in all cases, however, it is vital to include the characteristic device parameters like the valley degeneracy, the finite transverse thickness, etc. Further, the STLS theory predicts an abrupt spin-polarization transition at a sufficiently low electron density irrespective of the valley degeneracy and/or the finite thickness, with the partially spin-polarized states remaining unstable. Moreover, in the Si (100) inversion layer, the spin-polarization transition is preceded by the simultaneous valley- and spin- polarization; for its zero thickness model, these transitions however grossly disagree with the recent quantum Monte Carlo simulations. This drawback of the STLS theory is traced to its inaccuracy in treating electron correlations, which in turn become more and more important as the number of independent components (spin and valley) increases.