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Kohei Fujiwara

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ResearcherUnclaimed source record
cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-elnucl-ex

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5 publications

preprint2022arXiv

Intercorrelated anomalous Hall and spin Hall effect in kagome-lattice Co3_3Sn2_2S2_2-based shandite films

Magnetic Weyl semimetals (mWSMs) are characterized by linearly dispersive bands with chiral Weyl node pairs associated with broken time reversal symmetry. One of the hallmarks of mWSMs is the emergence of large intrinsic anomalous Hall effect. On heating the mWSM above its Curie temperature, the magnetism vanishes while exchange-split Weyl point pairs collapse into doubly-degenerated gapped Dirac states. Here, we reveal the attractive potential of these Dirac nodes in paramagnetic state for efficient spin current generation at room temperature via the spin Hall effect. Ni and In are introduced to separately substitute Co and Sn in a prototypal mWSM Co3_3Sn2_2S2_2 shandite film and tune the Fermi level. Composition dependence of spin Hall conductivity for paramagnetic shandite at room temperature resembles that of anomalous Hall conductivity for ferromagnetic shandite at low temperature; exhibiting peak-like dependence centering around the Ni-substituted Co2_2Ni1_1Sn2_2S2_2 and undoped Co3_3Sn2_2S2_2 composition, respectively. The peak shift is consistent with the redistribution of electrons' filling upon crossing the ferromagnetic-paramagnetic transition, suggesting intercorrelation between the two Hall effects. Our findings highlight a novel strategy for the quest of spin Hall materials, guided by the abundant experimental anomalous Hall effect data of ferromagnets in the literature.

Open access
preprint2020arXiv

Signature of band inversion in the perovskite thin-film alloys BaSn1−x_{1-x}Pbx_xO3_3

Perovskite oxides ABO3_3 containing heavy B-site elements are a class of candidate materials to host topological metals with a large spin-orbit interaction. In contrast to the band insulator BaSnO3_3, the semimetal BaPbO3_3 is proposed to be a typical example with an inverted band structure, the conduction band of which is composed of mainly the O-2p orbital. In this study, we exemplify a band-gap modification by systematic structural, optical, and transport measurements in BaSn1−x_{1-x}Pbx_xO3_3 films. A sudden suppression of the conductivity and an enhancement of the weak antilocalization effect at xx = 0.9 indicate the presence of a singular point in the electronic structure as a signature of the band inversion. Our findings provide an intriguing platform for combining topological aspects and electron correlation in perovskite oxides based on band-gap engineering.

Open access
preprint2020arXiv

Stabilization of a honeycomb lattice of IrO6_6 octahedra in superlattices with ilmenite-type MnTiO3_3

In the quest for quantum spin liquids, thin films are expected to open the way for the control of intricate magnetic interactions in actual materials by exploiting epitaxial strain and two-dimensionality. However, materials compatible with conventional thin-film growth methods have largely remained undeveloped. As a promising candidate towards the materialization of quantum spin liquids in thin films, we here present a robust ilmenite-type oxide with a honeycomb lattice of edge-sharing IrO6_6 octahedra artificially stabilized by superlattice formation with an ilmenite-type antiferromagnetic oxide MnTiO3_3. The stabilized sub-unit-cell-thick Mn-Ir-O layer is isostructural to MnTiO3_3, having the atomic arrangement corresponding to ilmenite-type MnTiO3_3 not discovered yet. By spin Hall magnetoresistance measurements, we found that antiferromagnetic ordering in the ilmenite Mn sublattice is suppressed by modified magnetic interactions in the MnO6_6 planes via the IrO6_6 planes. These findings lay the foundation for the creation of two-dimensional Kitaev candidate materials, accelerating the discovery of exotic physics and applications specific to quantum spin liquids.

Open access
preprint2013arXiv

5d transition metal oxide IrO2 as a material for spin current detection

Devices based on a pure spin current (a flow of spin angular momentum) have been attracting increasing attention as key ingredients for low-dissipation electronics. To integrate such spintronics devices into charge-based technologies, an electric detection of spin current is essential. Inverse spin Hall effect converts a spin current into an electric voltage through spin-orbit coupling. Noble metals such as Pt and Pd, and also Cu-based alloys, owing to the large direct spin Hall effect, have been regarded as potential materials for a spin-current injector. Those materials, however, are not promising as a spin-current detector based on inverse spin Hall effect. Their spin Hall resistivity rho_SH, representing the performance as a detector, is not large enough mainly due to their low charge resistivity. Here we demonstrate that heavy transition metal oxides can overcome such limitations inherent to metal-based spintronics materials. A binary 5d transition metal oxide IrO2, owing to its large resistivity as well as a large spin-orbit coupling associated with 5d character of conduction electrons, was found to show a gigantic rho_SH ~ 38 microohm cm at room temperature, one order of magnitude larger than those of noble metals and Cu-based alloys and even comparable to those of atomic layer thin film of W and Ta.

Open access
preprint2009arXiv

Status and overview of development of the Silicon Pixel Detector for the PHENIX experiment at the BNL RHIC

We have developed a silicon pixel detector to enhance the physics capabilities of the PHENIX experiment. This detector, consisting of two layers of sensors, will be installed around the beam pipe at the collision point and covers a pseudo-rapidity of | η| < 1.2 and an azimuth angle of | ϕ| ~ 2π. The detector uses 200 um thick silicon sensors and readout chips developed for the ALICE experiment. In order to meet the PHENIX DAQ readout requirements, it is necessary to read out 4 readout chips in parallel. The physics goals of PHENIX require that radiation thickness of the detector be minimized. To meet these criteria, the detector has been designed and developed. In this paper, we report the current status of the development, especially the development of the low-mass readout bus and the front-end readout electronics.

Open access

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