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Kevin Sivula

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Published work

2 published item(s)

preprint2016arXiv

Enhancing thermal stability of solution-processed small molecule semiconductor thin films using a flexible linker approach

Solution-processed organic photovoltaics (OPV) have recently reached the target 10% power conversion efficiency expected to signal their viable commercialization as an inexpensive and scalable energy conversion technology. However, obtaining devices with suitable long-term stability remains an unsolved challenge. Here we present a new strategy to improve the thermal stability of small-molecule-based bulk-heterojunction OPVs by including a custom additive specifically designed to interact with the device active layer components. Our results indicate that active layer degradation under continuous thermal stress can be inhibited due to the formation of more robust thin film microstructure with the additive present. Since our additive employs the identical semiconductor core used in the active layer, but linked by aliphatic chains into a flexible polymer, this straightforward strategy can reasonably be applied to stabilize a wide variety of semiconducting small molecules in solution-processed molecular OPVs, transistors and light emitting diodes.

preprint2011arXiv

Evolution of an oxygen NEXAFS transition in the upper Hubbard band in α-Fe2O3 upon electrochemical oxidation

Electrochemical oxidation of hematite (α-Fe2O3) nano-particulate films at 600 mV vs. Ag+/AgCl reference in KOH electrolyte forms a species at the hematite surface which causes a new transition in the upper Hubbard band between the Fe(3d)-O(2p) state region and the Fe(4sp)-O(2p) region, as evidenced by oxygen near edge x-ray absorption fine structure (NEXAFS) spectra. The electrochemical origin of this transition suggests that it is related with a surface state. This transition, not known for pristine α-Fe2O3 is at about the same x-ray energy, where pristine 1% Si doped Si:Fe2O3 has such transition. Occurrence of this state coincides with the onset of an oxidative dark current wave at around 535 mV - a potential range, where the tunneling exchange current has been previously reported to increase by three orders of magnitude with the valence band and the transfer coefficient by a factor of 10. Oxidation to only 200 mV does not form such extra NEXAFS feature, supporting that a critical electrochemical potential between 200 and 600 mV is necessary to change the electronic structure of the iron oxide at the surface. Decrease of the surface roughness, as suggested by visual inspection, profilometry and x-ray reflectivity, points to faceting as potential structural origin of the surface state.