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Researcher profile

Kevin S. H. Ng

Kevin S. H. Ng contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.quant-gasphysics.atom-ph

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Published work

2 published item(s)

preprint2020arXiv

New states of matter with fine-tuned interactions: quantum droplets and dipolar supersolids

Quantum fluctuations can stabilize Bose-Einstein condensates (BEC) against the mean-field collapse. Stabilization of the condensate has been observed in quantum degenerate Bose-Bose mixtures and dipolar BECs. The fine-tuning of the interatomic interactions can lead to the emergence of two new states of matter: liquid-like selfbound quantum droplets and supersolid crystals formed from these droplets. We review the properties of these exotic states of matter and summarize the experimental progress made using dipolar quantum gases and Bose-Bose mixtures. We conclude with an outline of important open questions that could be addressed in the future.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Scanned single-electron probe inside a silicon electronic device

Solid-state devices can be fabricated at the atomic scale, with applications ranging from classical logic to current standards and quantum technologies. While it is very desirable to probe these devices and the quantum states they host at the atomic scale, typical methods rely on long-ranged capacitive interactions, making this difficult. Here we probe a silicon electronic device at the atomic scale using a localized electronic quantum dot induced directly within the device at a desired location, using the biased tip of a low-temperature scanning tunneling microscope. We demonstrate control over short-ranged tunnel coupling interactions of the quantum dot with the device's source reservoir using sub-nm position control of the tip, and the quantum dot energy level using a voltage applied to the device's gate reservoir. Despite the $\sim 1$nm proximity of the quantum dot to the metallic tip, we find the gate provides sufficient capacitance to enable a high degree of electric control. Combined with atomic scale imaging, we use the quantum dot to probe applied electric fields and charge in individual defects in the device. This capability is expected to aid in the understanding of atomic-scale devices and the quantum states realized in them.

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