Researcher profile

Kevin L. Silverman

Kevin L. Silverman contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2022arXiv

Large Single-Phonon Optomechanical Coupling between Quantum Dots and Tightly Confined Surface Acoustic Waves in the Quantum Regime

Surface acoustic waves (SAWs) coupled to quantum dots (QDs), trapped atoms and ions, and point defects have been proposed as quantum transduction platforms, yet the requisite coupling rates and cavity lifetimes have not been experimentally established. Although the interaction mechanism varies, small acoustic cavities with large zero-point motion are required for high efficiencies. We experimentally establish the feasibility of this platform through electro- and opto-mechanical characterization of tightly focusing, single-mode Gaussian SAW cavities at $\sim$3.6 GHz on GaAs. We explore the performance limits of the platform by fabricating SAW cavities with mode volumes approaching 6$λ^3$ and linewidths $\leq$1 MHz. Employing strain-coupled single InAs QDs as optomechanical intermediaries, we measure single-phonon optomechanical coupling rates $g_0 \approx 2π\times 1.2$ MHz. Sideband scattering rates thus exceed intrinsic phonon loss, indicating the potential for quantum optical readout and transduction of cavity phonon states. To demonstrate the feasibility of this platform for low-noise ground-state quantum transduction, we develop a fiber-based confocal microscope in a dilution refrigerator and perform single-QD resonance fluorescence sideband spectroscopy at mK temperatures. These measurements show conversion between microwave phonons and optical photons with sub-natural linewidths.

preprint2020arXiv

Optimization of photoluminescence from W centers in silicon-on-insulator

W centers are trigonal defects generated by self-ion implantation in silicon that exhibit photoluminescence at 1.218 $μ$m. We have shown previously that they can be used in waveguide-integrated all-silicon light-emitting diodes (LEDs). Here we optimize the implant energy, fluence and anneal conditions to maximize the photoluminescence intensity for W centers implanted in silicon-on-insulator, a substrate suitable for waveguide-integrated devices. After optimization, we observe near two orders of magnitude improvement in photoluminescence intensity relative to the conditions with the stopping range of the implanted ions at the center of the silicon device layer. The previously demonstrated waveguide-integrated LED used implant conditions with the stopping range at the center of this layer. We further show that such light sources can be manufactured at the 300-mm scale by demonstrating photoluminescence of similar intensity from 300 mm silicon-on-insulator wafers. The luminescence uniformity across the entire wafer is within the measurement error.