Researcher profile

Kevin D. Osborn

Kevin D. Osborn contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2022arXiv

Probing hundreds of individual quantum defects in polycrystalline and amorphous alumina

Quantum two-level systems (TLSs) are present in the materials of qubits and are considered defects because they limit qubit coherence. For superconducting qubits, the quintessential Josephson junction barrier is made of amorphous alumina, which hosts TLSs. However, TLSs are not understood generally -- either structurally or in atomic composition. In this study, we greatly extend the quantitative data available on TLSs by reporting on the physical dipole moment in two alumina types: polycrystalline $\mathrm{\mathrm{γ-Al}_{2}\mathrm{O}_{3}}$ and amorphous $\mathrm{a-Al}\mathrm{O_{x}}$. To obtain the dipole moments $p_z$, rather from the less-structural coupling parameter g, we tune individual TLSs with an external electric field to extract the $p_z$ of the TLSs in a cavity QED system. We find a clear difference in the dipole moment distribution from the film types, indicating a difference in TLS structures. A large sample of approximately 400 individual TLSs are analyzed from the polycrystalline film type. Their dipoles along the growth direction $p_z$ have a mean value of 2.6$\pm$0.3 Debye (D) and standard deviation $σ$ = 1.6$\pm$0.2 D . The material distribution fits well to a single Gaussian function. Approximately 200 individual TLSs are analyzed from amorphous films. Both the mean $p_z$ =4.6$\pm$0.5 D and $σ$ =2.5$\pm$0.3 D are larger. Amorphous alumina also has some very large $p_z$, > 8.6 D, in contrast to polycrystalline which has none of this moment. These large moments agree only with oxygen-based TLS models. Based on data and the candidate models (delocalized O and hydrogen-based TLSs), we find polycrystalline alumina has smaller ratio of O-based to H-based TLS than amorphous alumina.

preprint2020arXiv

Reversible Fluxon Logic with optimized CNOT gate components

Reversible logic gates were previously implemented in superconducting circuits as adiabatic-reversible gates, which are powered with a sufficiently slow clock. In contrast, we are studying ballistic-reversible gates, where fluxons serve to both encode the information and power the gates. No power is applied to the gate apart from the energy of the input fluxons, and the two possible flux polarities represent the bit states. Undamped long Josephson junctions (LJJs), where fluxons move at practically constant speed from inertia, form the input and output channels of the gates. LJJs are connected in the gates by circuit interfaces, which are designed to allow the ballistic scattering from input to output fluxon states, using the temporary excitation of a localized mode. The duration of the resonant scattering determines the operation time of the gate, approximately a few Josephson plasma periods. Due to the coherent conversions between fluxon and localized modes the ballistic gates can be very efficient: in our simulations only a few percent of the fluxon's energy are dissipated in the gate operation. Ballistic-reversible gates can be combined with other, non-ballistic gate circuits to extend the range of gate functionalities. Here we describe how the CNOT can be built as a structure that includes the IDSN (Identity-else-Same-gives-NOT) and Store-and-Launch (SNL) gates. The IDSN is a 2-bit ballistic gate, which we describe and analyze in terms of equivalent 1-bit circuits. The SNL is a clocking gate, that allows the storage of a bit and the clocked launch of a fluxon on a bit-state dependent output path. In the CNOT the SNL gates provide the necessary routing and fluxon synchronization for the input to the IDSN gate.

preprint2019arXiv

Reversible Fluxon Logic: Topological particles allow ballistic gates along 1D paths

Digital computing currently uses irreversible logic gates whose energy dissipation is fundamentally limited. Reversible logic gates can provide an energy-efficient alternative since they can operate with reversible processes that have no dissipation, such as with scattering processes involving elastic particles. The presented logic uses fluxons, topological solitons in Long Josephson Junctions (LJJs), as inputs into and outputs from logic gates. An advantage of using LJJs for connections is that they restrict scattering to 1D paths, in contrast to previous ballistic logic which is based on 2D scattering. Furthermore, we find through simulation that there is almost no energy loss in the scattering of fluxons between LJJs of designed unpowered circuit gates. To switch bit states, the fluxons are made to change polarity during operations -- fluxons in an input LJJ freely propagate into the gate circuit, excite a nonlinear oscillatory interface mode, and quickly scatter deterministically to an output LJJ as a fluxon or antifluxon. The numerically simulated soliton dynamics shows that over $97\%$ of the total energy is preserved as fluxon energy after gate operations. These phenomena are further analyzed with a collective coordinate ansatz, reducing the dynamics of many degrees of freedom to two coordinates which characterize fluxon and antifluxon type excitations in the input and the output LJJs. The solutions of the reduced model accurately describe the four possible energy-conserving scattering processes found in simulations of one-bit gate circuits (with two scattering directions and two output polarities). Calculated parameter tolerances indicate that the gates can be manufactured and tested. Results are shown for 1-bit gates as well as a fundamental 2-bit gate.

preprint2010arXiv

Reducing quantum-regime dielectric loss of silicon nitride for superconducting quantum circuits

The loss of amorphous hydrogenated silicon nitride (a-SiN$_{x}$:H) is measured at 30 mK and 5 GHz using a superconducting LC resonator down to energies where a single-photon is stored, and analyzed with an independent two-level system (TLS) defect model. Each a-SiN$_{x}$:H film was deposited with different concentrations of hydrogen impurities. We find that quantum-regime dielectric loss tangent $\tanδ_{0}$ in a-SiN$_{x}$:H is strongly correlated with N-H impurities, including NH$_{2}$. By slightly reducing $x$ we are able to reduce $\tanδ_0$ by approximately a factor of 50, where the best films show $\tanδ_0$ $\simeq$ 3 $\times$ 10$^{-5}$.