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Kenneth L. Shepard

Kenneth L. Shepard contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hall

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preprint2013arXiv

Evidence for a Spin Phase Transition at ν=0 in Bilayer Graphene

The most celebrated property of the quantum spin Hall effect is the presence of spin-polarized counter-propagating edge states. This novel edge state configuration has also been predicted to occur in graphene when spin-split electron- and hole-like Landau levels are forced to cross at the edge of the sample. In particular, a quantum spin Hall analogue has been predicted at ν=0 in bilayer graphene if the ground state is a spin ferromagnet. Previous studies have demonstrated that the bilayer ν=0 state is an insulator in a perpendicular magnetic field, though the exact nature of this state has not been identified. Here we present measurements of the ν=0 state in a dual-gated bilayer graphene device in tilted magnetic field. The application of an in-plane magnetic field and perpendicular electric field allows us to map out a full phase diagram of the ν=0 state as a function of experimentally tunable parameters. At large in-plane magnetic field we observe a quantum phase transition to a metallic state with conductance of order 4e^2/h, consistent with predictions for the ferromagnet.

preprint2013arXiv

Graphene field-effect transistors with gigahertz-frequency power gain on flexible substrates

The development of flexible electronics operating at radio-frequencies (RF) requires materials that combine excellent electronic performance and the ability to withstand high levels of strain. In this work, we fabricate graphene field-effect transistors (GFETs) on flexible substrates from graphene grown by chemical vapor deposition (CVD). Our devices demonstrate unity-current-gain frequencies, fT, and unity-power-gain frequencies, fmax, up to 10.7 and 3.7 GHz, respectively, with strain limits of 1.75%. These devices represent the only reported technology to achieve gigahertz-frequency power gain at strain levels above 0.5%. As such, they demonstrate the potential of CVD graphene to enable a broad range of flexible electronic technologies which require both high-flexibility and RF operation.

preprint2012arXiv

Spin and valley quantum Hall ferromagnetism in graphene

In a graphene Landau level (LL), strong Coulomb interactions and the fourfold spin/valley degeneracy lead to an approximate SU(4) isospin symmetry. At partial filling, exchange interactions can spontaneously break this symmetry, manifesting as additional integer quantum Hall plateaus outside the normal sequence. Here we report the observation of a large number of these quantum Hall isospin ferromagnetic (QHIFM) states, which we classify according to their real spin structure using temperature-dependent tilted field magnetotransport. The large measured activation gaps confirm the Coulomb origin of the broken symmetry states, but the order is strongly dependent on LL index. In the high energy LLs, the Zeeman effect is the dominant aligning field, leading to real spin ferromagnets with Skyrmionic excitations at half filling, whereas in the `relativistic' zero energy LL, lattice scale anisotropies drive the system to a spin unpolarized state, likely a charge- or spin-density wave.